Reactive preclean prior to metallization for sub-quarter micron application

• US 6,107,192 A
• Filed: 12/30/1997
• Issued: 08/22/2000
• Est. Priority Date: 12/30/1997
• Status: Expired due to Term

• Current Assignee: Licentia Limited
• Original Assignee: Applied Materials Incorporated
• Inventors: Chen, Liang-Yuh, Mosely, Roderick Craig, Subrahmanyan, Suchitra
• Primary Examiner(s): Nelms, David
• Assistant Examiner(s): Berry, Renee R.
• Application Number:
  US09/000,746
• Time in Patent Office: 966 Days
• Field of Search: 438/655, 438/654, 438/683, 438/694, 438/653, 438/643
• US Class Current: 438/637
• CPC Class Codes: C23C 14/022 by means of bombardment with energetic particles or radiation
• CPC Class Codes: C23C 16/0236 by etching with a reactive gas
• CPC Class Codes: H01L 21/02063 the processing being the formation of vias or contact holes
• CPC Class Codes: H01L 21/76814 post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
• CPC Class Codes: H01L 21/76843 formed in openings in a dielectric
• CPC Class Codes: H01L 21/76861 Post-treatment or after-treatment not introducing additional chemical elements into the layer
• CPC Class Codes: Y10S 438/906 Cleaning of wafer as interim step

Abstract

The present invention generally provides a precleaning process prior to metallization for submicron features on substrates. The method includes cleaning the submicron features with radicals from a plasma of a reactive gas such as oxygen, a mixture of CF₄ /O₂, or a mixture of He/NF₃, wherein the plasma is preferably generated by a remote plasma source and the radicals are delivered to a chamber in which the substrate is disposed. Native oxides remaining in the submicron features are preferably reduced in a second step by treatment with radicals from a plasma containing hydrogen. Following the first or both precleaning steps, the features can be filled with metal by available metallization techniques which typically include depositing a barrier/liner layer on exposed dielectric surfaces prior to deposition of aluminum, copper, or tungsten. The precleaning and metallization steps can be conducted on available integrated processing platforms.

Claims

1. A method of precleaning features formed in a dielectric layer on a semiconductor substrate, comprising:

a) generating a plasma in a remote plasma source;

b) delivering radicals from the plasma to a process chamber which contains the substrate;

c) cleaning the features on the substrate prior to a barrier layer deposition; and

d) cleaning the features on the substrate after the barrier layer deposition and prior to a metal deposition.

2. The method of claim 1, wherein the plasma comprises a reactive gas selected from the group consisting of oxygen, a mixture of CF₄ /O₂, a mixture of He/NF₃, and combinations thereof.

3. The method of claim 1, wherein the radicals of the plasma of a reactive gas is delivered to a barrier layer deposition chamber prior to deposition of the barrier layer.

4. The method of claim 1, wherein the remote plasma source is a microwave source.

5. The method of claim 1, further comprising the step of reducing native oxides with radicals from the plasma, wherein the plasma comprises hydrogen.

6. The method of claim 5, wherein the native oxide is reduced by radicals from the plasma consisting of hydrogen, or a mixture of hydrogen and N₂, Ar, or He.

7. The method of claim 1, wherein the radicals from the plasma are delivered to a copper deposition chamber for passivation of the barrier layer prior to copper deposition.

8. A method of forming features on semiconductor substrates, comprising:

a) depositing a dielectric layer on a semiconductor substrate having a surface comprising a conductive or a semiconductive sublayer;

b) etching features in the dielectric layer to expose the sublayer;

c) cleaning the features with radicals from a plasma of a reactive gas which comprises oxygen, a mixture of CF₄ /O₂, or a mixture of He/NF₃, wherein the plasma is generated by a remote plasma source and the radicals are delivered to a chamber which contains the substrate;

d) depositing a barrier layer on the feature;

e) cleaning the barrier layer with radicals from a plasma consisting of hydrogen, or a mixture of hydrogen and N₂, Ar, or He; and

f) filling the features with a conductive or semiconductive material.

9. The method of claim 8, wherein the dielectric layer comprises silicon dioxide.

10. The method of claim 8, wherein the reactive gas is a mixture of CF₄ /O₂.

11. The method of claim 8, wherein a TiSi_x layer is formed within the feature.

12. The method of claim 8, further comprising reducing native oxides remaining in the features with radicals from a plasma comprising hydrogen with little or no bias power applied to the substrate.

13. The method of claim 8, wherein the barrier layer is TiN.

14. A method of precleaning and filling submicron features in a dielectric layer on a semiconductor substrate, comprising:

a) cleaning the submicron features with radicals from a plasma comprising a reactive gas;

b) reducing native oxides remaining in the submicron features with radicals from a plasma comprising hydrogen;

c) depositing a barrier/liner layer on exposed surfaces of the dielectric layer; and

d) cleaning the barrier/liner layer with radicals from the plasma of a reactive gas.

15. The method of claim 14, wherein the reactive gas is a mixture of CF₄ /O₂.

16. The method of claim 14, wherein the barrier/liner layer comprises a material selected from the group consisting of titanium, titanium nitride, tantalum, and tantalum nitride.

17. The method of claim 16, wherein the plasma of a reactive gas comprises oxygen, a mixture of CF₄ /O₂, or a mixture of He/NF₃.

18. The method of claim 17, further comprising depositing aluminum, copper, or tungsten on the barrier/liner layer.

19. The method of claim 14, wherein the plasma is generated in a remote plasma source and the radicals are delivered to a barrier layer deposition chamber which contains the substrate prior to deposition of the barrier layer.

20. The method of claim 14, wherein the plasma is generated in a remote plasma source and the radicals are delivered to a copper deposition chamber for passivation of a barrier layer prior to copper deposition.