Semiconductor device
First Claim
1. A semiconductor device comprising.a circuit formed by a transistor having a configuration including a source region, a drain region and an active region formed using a crystalline semiconductor,said active region comprising a Six Ge1-x (0<
- X<
1) region formed by adding germanium locally thereto and a Si region added with no germanium,said Si region suppressing expansion of a depletion layer from said drain region toward said source region,wherein said Six Ge1-x (0<
X<
1) region and said Si region are arranged in said active region substantially in parallel and alternately with each other and arranged perpendicular to a width direction of said active region.
1 Assignment
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Accused Products
Abstract
There is provided a semiconductor device having a novel structure in which high operating performance and high reliability can be achieved at the same time.
In an active region 102 sandwiched by a source region 101 and a drain region 103 constituted by a crystalline semiconductor, a SiX Ge1-X (0<X<1) region 105 is formed by doping the same with germanium locally. The expansion of a depletion layer from the drain toward the source is effectively suppressed utilizing the difference in the band structures of the SiX Ge1-X region 105 and a Si region 106 doped with no germanium.
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Citations
32 Claims
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1. A semiconductor device comprising.
a circuit formed by a transistor having a configuration including a source region, a drain region and an active region formed using a crystalline semiconductor, said active region comprising a Six Ge1-x (0< - X<
1) region formed by adding germanium locally thereto and a Si region added with no germanium,said Si region suppressing expansion of a depletion layer from said drain region toward said source region, wherein said Six Ge1-x (0<
X<
1) region and said Si region are arranged in said active region substantially in parallel and alternately with each other and arranged perpendicular to a width direction of said active region. - View Dependent Claims (2, 3, 4, 5, 23, 24)
- X<
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6. A semiconductor device comprising:
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a transistor having a configuration including a source region, a drain region and an active region formed using a crystalline semiconductor, said active region comprising a Six Ge1-x (0<
X<
1) region formed by adding germanium locally thereto and a Si region added with an element selected from element groups 13 and 15 of a long periodic table;said Si region suppressing expansion of a depletion layer from said drain region toward said source region and controlling a threshold voltage, wherein said Six Ge1-x (0<
X<
1) region and said Si region are arranged in said active region substantially in parallel and alternately with each other and arranged perpendicular to a width direction of said active region. - View Dependent Claims (7, 8, 9, 10, 25, 26)
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11. A semiconductor device comprising:
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a circuit formed by a transistor having a configuration including a source region, a drain region and an active region formed using a crystalline semiconductor, and a Six Ge1-x (0<
X<
1) region formed by adding germanium thereto and a Si region added with no germanium being arranged in said active region substantially in parallel and alternately with each other,said Six Ge1-x (0<
X<
1) region being formed between said source region and said drain region,wherein said Six Ge1-x (0<
X<
1) region and said Si region are arranged in said active region substantially in parallel and arranged perpendicular to a width direction of said active region. - View Dependent Claims (12, 13, 14, 27, 28)
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15. A semiconductor device comprising:
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a circuit formed by a transistor having a configuration including a source region, a drain region and an active region formed using a crystalline semiconductor, and Six Ge1-x (0<
X<
1) regions formed by adding germanium thereto being locally formed at the junction between said active region and said source region at intervals from each other,wherein said Six Ge1-x (0<
X<
1) regions are arranged in parallel and alternately to Si regions with each other and arranged perpendicular to a width direction of said active region. - View Dependent Claims (16, 17, 18, 29, 30)
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19. A semiconductor device comprising:
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a circuit formed by a transistor having a configuration including a source region, a drain region and an active region formed using a crystalline semiconductor, and Six Ge1-x (0<
X<
1) regions formed by adding germanium thereto being locally formed at the junction between said active region and said drain region at intervals from each other,wherein said Six Ge1-x (0<
X<
1) regions are arranged in parallel and alternately to Si regions with each other and arranged perpendicular to a width direction of said active region. - View Dependent Claims (20, 21, 22, 31, 32)
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Specification