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MOS transistor with low-k spacer to suppress capacitive coupling between gate and source/drain extensions

  • US 6,107,667 A
  • Filed: 09/10/1998
  • Issued: 08/22/2000
  • Est. Priority Date: 09/10/1998
  • Status: Expired due to Term
First Claim
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1. A semiconductor device made in accordance with the steps comprising of:

  • establishing a channel region, a source region, a drain region, a source extension and a drain extension within a surface of a substrate;

    forming a field oxide layer over the surface of the substrate;

    establishing a gate void in the field oxide layer defining a wall above the substrate, wherein the gate void is above the channel region, source extension and drain extension;

    forming a gate oxide within the gate void on the surface of the substrate;

    disposing a gate spacer in the gate void against the wall over the gate oxide and above the source extension and drain extension, wherein the gate spacer has a void over the channel region of the substrate;

    removing the gate oxide above the channel region of the substrate;

    placing a gate insulator over the channel region of the substrate in the gate spacer void, wherein the gate insulator has a high dielectric coefficient;

    disposing a gate electrode in the gate spacer void so that the gate spacer is disposed between the wall and the gate electrode and the gate insulator is between the gate electrode and the substrate;

    removing the gate spacer and gate oxide to form a void between the wall and the gate electrode and exposing the substrate between the wall and the gate insulator;

    forming a protective layer in the void between the wall and the gate electrode, so that the protective layer coats the wall, the gate electrode and the substrate between the wall and the gate insulator;

    filling part of the void between the wall and the gate electrode with a low dielectric coefficient spacer, so that the low dielectric coefficient spacer is separated from the wall and the substrate and at least part of the gate electrode by the protective layer.

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