Wideband linear GaAsFET ternate cascode amplifier

• US 6,107,885 A
• Filed: 01/25/1999
• Issued: 08/22/2000
• Est. Priority Date: 01/25/1999
• Status: Expired due to Fees

• Current Assignee: General Instrument Corporation (CommScope Holding Company, Inc.)
• Original Assignee: General Instrument Corporation (CommScope Holding Company, Inc.)
• Inventors: Menna, Rudolph J., Miguelez, Philip
• Primary Examiner(s): Pascal, Robert
• Assistant Examiner(s): Choe, Henry
• Application Number:
  US09/236,175
• Time in Patent Office: 575 Days
• Field of Search: 330/264, 330/269, 330/276, 330/275, 330/311
• US Class Current: 330/276
• CPC Class Codes: H03F 3/265 with field-effect transistors only

Abstract

The present invention incorporates GaAs field effect transistors (GaAsFETs) in a radio frequency (RF) ultra-linear amplifier. The described amplifier circuit is a transformer-coupled single input, signal processing unit incorporating ultra-fast, GaAsFETs in a three active device cascode. This arrangement allows for a higher working voltage to be applied across the three semiconductors rather than a traditional two transistor cascode. The operational bandwidth can process a mixed modulation signal comprised of analog and digital channels.

Claims

1. A wide bandwidth radio frequency amplifier comprising:

an unbalanced-to-balanced transformer having a RF amplifier input for coupling with a RF input signal and first and second low level signal outputs;

a first cascode having a low level signal input coupled to said unbalanced-to-balanced transformer first low level output and a high level signal output;

a second cascode having a low level signal input coupled to said unbalanced-to-balanced transformer second low level output and a high level signal output;

said first cascode having first, second and third stages coupled in a cascode configuration with a voltage source means in parallel therewith providing predetermined voltage drops across said first, second and third stages with said first stage including said low level signal input, said second stage providing impedance matching between said first and said third stages, and said third stage including said high level signal output;

said second cascode having first, second and third stages coupled in a cascode configuration with said voltage source means in parallel therewith providing predetermined voltage drops across said first, second and third stages of said second gain stage with said first stage including said low level signal input, said second stage providing impedance matching between said first and said third stages, and said third stage including said high level signal output; and

a balanced-to-unbalanced transformer having a first input coupled to said first gain stage output and a second input coupled to said second gain stage output and a RF amplifier output for coupling with a RF output terminal.

2. The RF amplifier according to claim 1 wherein said stages are GaAsFETs.

3. The RF amplifier according to claim 1 wherein said voltage source means comprises a voltage divider including first, second and third resistors.

4. The RF amplifier according to claim 2 wherein said first cascode conducts on positive portions of said RF input signal and said second cascode conducts on negative portions of said RF input signal.

5. The RF amplifier according to claim 2 wherein said first and second cascodes are n-channel devices.

6. The RF amplifier according to claim 2 wherein said first cascode includes n-channel devices and said second cascode includes p-channel devices.

7. The RF amplifier according to claim 6 wherein said stages associated with said first cascode are complimentary pairs with said stages associated with said second cascode.

8. The RF amplifier according to claim 1 where said configuration of said first and second cascodes is common-source, common-gate, common-gate.