Wafer holding device

• US 6,108,190 A
• Filed: 11/30/1998
• Issued: 08/22/2000
• Est. Priority Date: 12/01/1997
• Status: Expired due to Term

• Current Assignee: Kyocera Corporation
• Original Assignee: Kyocera Corporation
• Inventors: Nagasaki, Koichi
• Primary Examiner(s): Jackson, Stephen W.
• Application Number:
  US09/201,625
• Time in Patent Office: 631 Days
• Field of Search: 361/230-235, 279/128
• US Class Current: 361/234
• CPC Class Codes: H01L 21/67103 mainly by conduction
• CPC Class Codes: H01L 21/68757 characterised by a coating or a hardness or a material

Abstract

A wafer holding device is provided, which comprised a wafer holding stage of ceramics having a internal electrode and a top surface on which at least a wafer is to be mounted, a base block supporting said stage integrated thereto, and a braze material layer to join the stage and the base block therebetween which the layer is interposed, wherein the base block is formed a porous ceramics and a metal filled in pores of the ceramics, the porous ceramics has a thermal expansion coefficient within 3×10^-6 /° C. of the difference of the thermal expansion coefficient with respect to the ceramics of the stage, and the braze material layer comprises a aluminum-based braze material.

Claims

1. A wafer holding device, comprising a wafer holding stage of ceramics having at least one internal electrode and a top surface on which at least a wafer is to be mounted, a base block supporting said stage integrated thereto, and a braze material layer to join the stage and the base block between which the layer is interposed, wherein the base block is formed of a porous ceramics and a metal filled in pores of a bulk of the ceramics, a thermal expansion coefficient of the base block is within 3×

10^-6 /°

C. of a thermal expansion coefficient of the stage, and the braze material layer comprises an aluminum-based braze material.

2. A wafer holding device according to claim 1, wherein each of the internal electrodes is selected from the group consisting of a dielectric attraction electrode, a heating electrode and a plasma-generating electrode.

3. A wafer holding device according to claim 1 or 2, wherein the ceramics of said stage and the porous ceramics of the base block comprise a same ceramics as a main component containing any of aluminum nitride, silicon nitride, alumina, boron carbide, and the metal filled into the pores of the porous ceramics of the base block is aluminum or its alloy or indium.

4. A wafer holding device according to claim 1 or 2, wherein the ceramics of said stage and the porous ceramics of the base block comprise a same kind of ceramics as a main component containing any one of aluminum nitride, silicon nitride, alumina and boron carbide, and the metal filled in the porous ceramics is aluminum or its alloy.

5. A wafer holding device according to any one of claims 1 or 2, wherein the mixing proportion of the porous ceramics to the metal in the base block is in a range of 50:

50 to 80;

20 by volume.

6. A wafer holding device according to any one of claims 1 or 2, wherein the porous ceramics of the base block having a mean diameter of the pores in a range of 10 to 100 μ

m and a porosity in a range of 20 to 50%.

7. A wafer holding device according to any one of claims 1 or 2, wherein the base block has a function as a electrode for emitting plasma.