Wide range multiple band RF power detector
First Claim
1. A multiple band radio frequency (RF) signal detection circuit for detecting signal strength of RF signals at a plurality of frequency bands, said signal detection circuit comprising:
- a first detector device producing a first detector signal current, said first detector signal current related to a first RF signal strength at a first frequency band;
a second detector device producing a second detector signal current, said second detector signal current related to a second RF signal strength at a second frequency band;
a load developing impedance for receiving said first detector signal current and said second detector signal current, said load developing impedance converting said first detector signal current to a first detector signal voltage and said second detector signal current to a second detector signal voltage; and
an amplifier for providing an amplified output of said first detector signal voltage if a first RF signal is present and an amplified output of said second detector signal voltage if a second RF signal is present.
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Accused Products
Abstract
The specification relates to a radio frequency (RF) power detection circuit for multiple frequency bands. One embodiment of the present invention uses semiconductors as power detection sensors and as temperature compensation devices. Multiple power detection sensor current signals each develop a voltage signal across a common load resistor. Similarly, multiple temperature compensation sensor current signals each develop a voltage signal across a second common load resistor. A detector voltage and a temperature compensation voltage are then processed through common amplification circuitry, producing a signal proportional to sensed transmitted power.
102 Citations
22 Claims
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1. A multiple band radio frequency (RF) signal detection circuit for detecting signal strength of RF signals at a plurality of frequency bands, said signal detection circuit comprising:
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a first detector device producing a first detector signal current, said first detector signal current related to a first RF signal strength at a first frequency band; a second detector device producing a second detector signal current, said second detector signal current related to a second RF signal strength at a second frequency band; a load developing impedance for receiving said first detector signal current and said second detector signal current, said load developing impedance converting said first detector signal current to a first detector signal voltage and said second detector signal current to a second detector signal voltage; and an amplifier for providing an amplified output of said first detector signal voltage if a first RF signal is present and an amplified output of said second detector signal voltage if a second RF signal is present. - View Dependent Claims (2, 3, 4, 5)
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6. An apparatus for radio frequency (RF) signal strength detection within a dual frequency band transmitter, said apparatus providing an analog DC output proportional to a relative signal strength of a first RF signal if said first RF signal is being transmitted, said apparatus providing an analog DC output proportional to a relative signal strength of a second RF signal if said second RF signal is being transmitted, said apparatus comprising:
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a first semiconductor detector device producing a first detector current at a first detector output, said first detector current proportional to a first RF signal strength sensed while said dual frequency band transmitter is transmitting at a first frequency band; a second semiconductor detector device producing a second detector current at a second detector output, said second detector current proportional to a second RF signal strength sensed while said dual frequency band transmitter is transmitting at a second frequency band; a load developing resistor having a first load end and a second load end, said first load end electrically coupled to said first detector output, said first load end further electrically coupled to said second detector output, said second load end electrically coupled to provide electrical continuity, said load developing resistor converting said first detector current to a first detector voltage proportional to said first RF signal strength if said dual frequency band transmitter is transmitting at said first frequency band, said load developing resistor converting said second detector current to a second detector voltage proportional to said second RF signal strength if said dual frequency band transmitter is transmitting at said second frequency band; and a signal amplification stage having a first input terminal, a second input terminal, and an output terminal, said first input terminal electrically coupled to said first load end, said second input terminal electrically coupled to a DC reference voltage, said DC reference voltage selected to compensate for DC offset bias voltages generated by said first semiconductor detector device and said second semiconductor detector device, said output terminal providing a RF power detection device DC analog output proportional to said first RF signal strength if said dual frequency band transmitter is transmitting at said first frequency band, said output terminal providing a RF power detection device DC analog output proportional to said second RF signal strength if said dual frequency band transmitter is transmitting at said second frequency band. - View Dependent Claims (7, 8, 9, 10, 11)
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12. A temperature compensated, multiple band radio frequency (RF) signal detection circuit for detecting RF transmission signal strength at a plurality of frequency bands, said signal detection circuit comprising:
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a forward biased first semiconductor detector operable to receive a first RF band transmission detection signal, said first semiconductor detector rectifying said first RF band transmission detection signal and producing a first semiconductor detector DC current, said first semiconductor detector DC current being partially comprised of a first semiconductor detector DC offset component and further being partially comprised of a first semiconductor detector analog DC component proportional to said first RF band transmission detection signal strength; a forward biased second semiconductor detector operable to receive a second RF band transmission detection signal, said second semiconductor detector rectifying said second RF band transmission detection signal and producing a second semiconductor detector DC current, said second semiconductor detector DC current being partially comprised of a second semiconductor detector DC offset component and further being partially comprised of a second semiconductor detector analog DC component proportional to said second RF band transmission detection signal strength; a load developing resistor having a first load end and a second load end, said first load end electrically coupled to receive said first semiconductor detector DC current and said second semiconductor detector DC current, said load developing resistor generating a power detection amplifier (PDA) signal input voltage, said PDA signal input voltage comprised of a first signal voltage, a second signal voltage, a third signal voltage, and a fourth signal voltage, said first signal voltage being a first semiconductor detector DC offset voltage, said second signal voltage being a second semiconductor detector DC offset voltage, said third signal voltage being a first semiconductor detector analog DC voltage proportional to said first RF band transmission detection signal strength, said fourth signal voltage being a second semiconductor detector analog DC voltage proportional to said second RF band transmission detection signal strength, said second load end electrically coupled to provide for electrical continuity; and an amplifier having a first input terminal, a second input terminal, and an amplifier analog DC output, said first input terminal electrically coupled to accept said PDA signal input voltage, said second input terminal electrically coupled to accept a DC reference voltage, said amplifier analog DC output proportional to said third signal voltage during a first RF band transmission, said amplifier analog DC output proportional to said fourth signal voltage during a second RF band transmission. - View Dependent Claims (13, 14, 15, 16)
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17. An apparatus for temperature compensated radio frequency (RF) transmission signal strength detection in a dual frequency band transmitter, said apparatus providing an analog DC output proportional to a relative signal strength of a first RF signal if said first RF signal is being transmitted, said apparatus providing an analog DC output proportional to a relative signal strength of a second RF signal if said second RF signal is being transmitted, said apparatus comprising:
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a forward biased first detector semiconductor for accepting and rectifying a first RF band detection signal, said first detector semiconductor generating a first steady-state DC bias current, said first detector semiconductor additionally generating a first DC signal current when said first RF band detection signal is present; a forward biased second detector semiconductor for accepting and rectifying a second RF band detection signal, said second detector semiconductor generating a second steady-state DC bias current, said second detector semiconductor additionally generating a second DC signal current when said second RF band detection signal is present; a load resistor operable to accept said first steady-state DC bias current, said second steady-state DC bias current, said first DC signal current, and said second DC signal current, said load resistor developing an amplifier input signal voltage proportional to current accepted; a forward biased first reference semiconductor to provide for temperature compensation, said first reference semiconductor matched to said first detector semiconductor, said first reference semiconductor generating a third steady-state DC bias current approximately equal to said first steady-state DC bias current; a forward biased second reference semiconductor to provide for temperature compensation, said second reference semiconductor matched to said second detector semiconductor, said second reference semiconductor generating a fourth steady-state DC bias current approximately equal to said second steady-state DC bias current; a reference resistor accepting said third steady-state DC bias current and said fourth steady-state DC bias current, said reference resistor developing an amplifier input reference voltage proportional to current accepted; and an amplifier with a first input terminal, a second input terminal, and an output, said first input terminal accepting said amplifier input signal voltage, said second input accepting said amplifier input reference voltage, said output proportional to said first RF signal when said first RF signal is being transmitted, said output proportional to said second RF signal when said second RF signal is being transmitted. - View Dependent Claims (18, 19, 20, 21, 22)
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Specification