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Process for manufacturing high-sensitivity accelerometric and gyroscopic integrated sensors, and sensor thus produced

  • US 6,109,106 A
  • Filed: 07/30/1998
  • Issued: 08/29/2000
  • Est. Priority Date: 07/31/1997
  • Status: Expired
First Claim
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1. An integrated sensor, comprising:

  • a substrate and an epitaxial layer of semiconductor material formed on said substrate, said epitaxial layer forming a movable mass which is surrounded at sides by a fixed mass;

    said movable mass being separated from said substrate by a gap and at the sides from said fixed mass through trenches formed in said epitaxial layer;

    said movable mass being supported by said fixed mass through anchorage portions in said epitaxial layer; and

    a weighting region comprising tungsten at said movable mass.

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