Temperature probe and measurement method for low pressure process

• US 6,110,288 A
• Filed: 12/17/1998
• Issued: 08/29/2000
• Est. Priority Date: 12/17/1998
• Status: Expired due to Term

• Current Assignee: Lam Research Corporation
• Original Assignee: Eaton Corp. (Wisconsin) (Eaton Corporation PLC.)
• Inventors: Cardoso, Andre, Penelon, Joel
• Primary Examiner(s): Beck, Shrive
• Assistant Examiner(s): HASSANZADEH, PARVIZ
• Application Number:
  US09/213,925
• Time in Patent Office: 621 Days
• Field of Search: 156/345, 118/724, 118/725, 118/723 HC, 118/723 E, 204/298.09, 165/80.1, 165/8.02, 165/8.04, 165/287, 165/288, 165/290, 374/135, 374/208
• US Class Current: 118/724
• CPC Class Codes: G01K 1/143 for measuring surface temperatures
• CPC Class Codes: G01K 1/16 Special arrangements for conducting heat from the object to the sensitive element

Abstract

A temperature probe for use in low pressure processes having an improved thermal response wherein fluid is supplied to a fluid transport passageway in the probe head for creating an increased pressure between the probe head and a semiconductor wafer for increasing the thermal conductivity therebetween.

Claims

1. An apparatus for performing a process on a semiconductor wafer, comprising:

a process chamber,

means for supplying a gaseous environment to the chamber which is at an ambient process pressure,

a temperature probe for supporting along with other support means a semiconductor wafer to be processed, the probe comprised of a probe head and a probe head support, the probe head having a wafer contacting surface in the shape of a flat disk, which over its entire surface contacts only a small area of the wafer, the wafer contacting surface having an orifice,

the orifice in the wafer contacting surface of the probe head communicating with a fluid passageway which is connectable to means outside the process chamber for supplying gas to the orifice for raising the pressure above the wafer contacting surface in the region of the small area of the wafer which is contacted to above the ambient process pressure, wherein the wafer is not secured to the wafer contacting surface.

2. The apparatus of claim 1 wherein the probe is comprised of a probe head which includes the wafer contacting surface, and a support, wherein the support is a tubular means having a long dimension and a cross sectional dimension, wherein the cross sectional dimension is small in relation to the long dimension.

3. The apparatus of claim 1 wherein said other support means comprises a plurality of pegs.

4. The apparatus of claim 1 wherein the ambient process pressure is below about 10 torr.

5. The apparatus of claim 4 wherein the means for supplying gas raises the pressure above the probe contact surface to above about 20 torr.

6. The apparatus of claim 1 wherein the means for supplying gas raises the pressure above the probe contact surface to above about 20 torr.

7. A temperature probe for measuring the temperature of a semiconductor wafer and for supporting the semiconductor wafer along with other separate support means, comprising,

a probe head having a temperature sensor disposed therein,

the probe head having a contact surface in the shape of a disk which over its entire surface contacts only a small area of the semiconductor wafer, there being an opening in the contact surface,

a fluid transport passage way in the probe head communicating from the opening and connectable to a fluid source for providing fluid at the opening for forming a fluid cushion beneath the semiconductor wafer, and

a probe head support for the probe head.

8. The temperature probe of claim 7 which does not include any means for securing the semiconductor wafer to the probe head.

9. The temperature probe of claim 8 wherein the support comprises a tubular means having a long dimension and a cross-sectional dimension, wherein the cross-sectional dimension is small in relation to the long dimension.

10. The probe of claim 9 wherein the fluid transport passageway in the probe head communicates from the contact surface to a surface of the probe head which is opposite the contact surface.

11. The probe of claim 10 comprising in the support at least one second fluid transport passageway, which at a first end is in fluid communication with the fluid transport passageway in the probe head.

12. The probe of claim 11 wherein at least part of the fluid transport passageway in the probe head, and at least part of the fluid transport passageway in the support, are different portions of a continuous channel.

13. The probe of claim 12 wherein at least part of the support for the probe head comprises a rigid tube, the interior of which comprises said continuous channel.

14. The probe of claim 13 wherein the rigid tube is surrounded at least in part by a second tube, and wherein the temperature sensor has at least one lead wire which runs through the second tube.

15. The probe of claim 14 wherein the second tube does not contact the probe head.

16. The probe of claim 13 wherein part of said tubes are oriented substantially perpendicular to the probe head and part of the tubes are oriented substantially parallel to the probe head.

17. The probe of claim 16 wherein the rigid tube is made of metal while the second tube which surrounds the rigid tube is made of quartz.

18. The probe of claim 11 wherein said at least one fluid transport passageway in the support comprises two fluid transport passageways, and wherein the temperature sensor has two lead wires, which run, respectively, in the two fluid transport passageways.

19. The probe of claim 18 wherein the probe head has two channels through which run, respectively, the two lead wires of the temperature sensor.

20. The probe of claim 19 wherein the two channels in the probe head are in line with the two fluid transport passageways in the support.

21. The probe of claim 19 wherein said surface of the probe head which is opposite the contact surface has a cavity therein, and wherein the support has a shaped end which mates with the cavity so that the probe head may freely pivot on the support.

22. The probe of claims 11 wherein when a semiconductor wafer is situated on the contact surface of the probe head, the thermal resistance between the wafer and the probe head is substantially less than the thermal resistance between the probe head and the support.

23. The apparatus of claim 8 wherein the wafer is heated by radiant energy.

24. The apparatus of claim 7 wherein said other separate support means comprises a plurality of pegs.