Method and structure for controlling plasma uniformity

• US 6,110,395 A
• Filed: 08/26/1997
• Issued: 08/29/2000
• Est. Priority Date: 08/26/1997
• Status: Expired due to Term

• Current Assignee: SPTS Technologies Limited (KLA Corporation)
• Original Assignee: Trikon Technologies Inc. (ATI Liquidating, Inc.)
• Inventors: Gibson, Gerald W. Jr.
• Primary Examiner(s): DANG, THI D
• Application Number:
  US08/918,852
• Time in Patent Office: 1,099 Days
• Field of Search: 156/345, 118/723 E, 427/571, 204/298.37, 438/732, 216/67
• US Class Current: 216/67
• CPC Class Codes: H01J 37/32522 Temperature
• CPC Class Codes: H01J 37/32623 Mechanical discharge control means
• CPC Class Codes: H01J 37/3266 Magnetic control means
• CPC Class Codes: H05H 1/46 using applied electromagnetic fields, e.g. high frequency or microwave energy H05H1/26 takes precedence

Abstract

The present invention relates to a method and structure for controlling plasma uniformity in plasma processing applications. Electron thermal conductivity parallel and perpendicular to magnetic field lines differs by orders of magnitude for low magnetic fields (on the order of 10 gauss). This property allows the directing of heat flux by controlling the magnetic field configuration independent of ions since the effect of modest magnetic fields upon the transport of ions themselves is minimal. Heat is preferentially conducted along magnetic field lines with electron temperatures on the order of 0.1 to 1 eV/cm being sufficient to drive kilowatt-level heat fluxes across areas typical of plasma processing source dimensions.

Claims

1. A method of controlling plasma uniformity during plasma processing of a substrate comprising:

providing a process chamber containing a plasma and said substrate; and

generating a low magnetic field less than or equal to 20 gauss proximate to said substrate and substantially parallel to said substrate in said process chamber, wherein said low magnetic field acts to direct a heat flow in said plasma to control uniformity of said plasma.

2. The method of claim 1 wherein said low magnetic field is generated by a plurality of energized magnetic coils in a bucking configuration.

3. The method of claim 1 wherein said low magnetic field is a highly flared magnetic field.

4. The method of claim 1 wherein said plasma has a density less than 1.0×

10¹² electrons/cm³.

5. The method of claim 1 wherein said process chamber is at a pressure less than 5 mTorr.

6. A structure for use in the processing of a substrate, said structure comprising:

a process chamber for holding said substrate to be operated upon by said plasma, said process chamber having a first and second surface; and

a first and a second magnetic field coil said first magnetic field coil proximate to said first surface of said process chamber and said second magnetic field coil proximate to said second surface of said process chamber;

said first and second magnetic field coils being configured for generating in said process chamber a low magnetic field that is proximate to said substrate surface and substantially parallel to said substrate surface said low magnetic field directing a flow of heat in said process chamber to control uniformity of said plasma;

wherein said process chamber has a substantially square circumference and wherein permanent magnets are positioned proximate to said process chamber and around said substantially square circumference of said process chamber.