Method and apparatus for preparing integrated circuit thin films by chemical vapor deposition
First Claim
Patent Images
1. A method of fabricating an integrated circuit including a thin film, said method comprising steps of:
- (a) providing at least one liquid precursor;
(b) forming a mist of said at least one liquid precursor;
(c) gasifying said mist to form a gasified precursor comprising amounts of a bismuth-containing organic compound, a metal polyalkoxide compound, and a lead-containing organic compound without breaking the chemical bonds of said compounds;
(d) transporting said gasified precursor to a deposition reactor using at least one carrier gas;
(e) flowing oxygen gas into said deposition reactor;
(f) mixing said gasified precursor, said at least one carrier gas and said oxygen gas to form a reactant gas in said deposition reactor;
(g) providing a substrate in a deposition reactor; and
(h) reacting said reactant gas in said deposition reactor to form said thin film on said substrate, wherein said thin film comprises a layered superlattice material represented by a formula of;
space="preserve" listing-type="equation">(Sr.sub.a Ba.sub.b Pb.sub.c)(Nb.sub.x Ta.sub.y)Bi.sub.2 O.sub.9 where a+b+c=1, 0≦
c≦
1, x+y=2.
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Abstract
A mist is generated by a venturi from liquid precursors containing compounds used in chemical vapor deposition, transported in carrier gas through tubing at ambient temperature, passed into a heated zone where the mist droplets are gasified at a temperature of between 100° C. and 200° C., which is lower than the decomposition temperature of the precursor compounds. The gasified liquid is injected through an inlet assembly into a deposition reactor in which there is a substrate heated to from 400° C. to 600° C., on which the gasified compounds decompose and form a thin film of layered superlattice compound.
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Citations
31 Claims
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1. A method of fabricating an integrated circuit including a thin film, said method comprising steps of:
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(a) providing at least one liquid precursor; (b) forming a mist of said at least one liquid precursor; (c) gasifying said mist to form a gasified precursor comprising amounts of a bismuth-containing organic compound, a metal polyalkoxide compound, and a lead-containing organic compound without breaking the chemical bonds of said compounds; (d) transporting said gasified precursor to a deposition reactor using at least one carrier gas; (e) flowing oxygen gas into said deposition reactor; (f) mixing said gasified precursor, said at least one carrier gas and said oxygen gas to form a reactant gas in said deposition reactor; (g) providing a substrate in a deposition reactor; and (h) reacting said reactant gas in said deposition reactor to form said thin film on said substrate, wherein said thin film comprises a layered superlattice material represented by a formula of;
space="preserve" listing-type="equation">(Sr.sub.a Ba.sub.b Pb.sub.c)(Nb.sub.x Ta.sub.y)Bi.sub.2 O.sub.9where a+b+c=1, 0≦
c≦
1, x+y=2.
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2. A method of fabricating an integrated circuit including a thin film of a compound containing at least two metals, said method comprising steps of:
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(a) providing;
a liquid precursor suitable for forming said compound; and
a deposition reactor containing a substrate;
said liquid precursor comprising at least one metal polyalkoxide compound containing said at least two metals, said at least two metals selected from the group consisting of strontium, calcium, barium, cadmium, lead, tantalum, hafnium, tungsten, niobium, zirconium, bismuth, scandium, yttrium, lanthanum, antimony, chromium, molybdenum, vanadium, ruthenium and thallium;(b) forming a mist of said liquid precursor using a venturi mister; (c) gasifying said mist to form a gasified precursor; (d) flowing said gasified precursor into said deposition reactor; (e) reacting said gasified precursor in said deposition reactor to form said thin film of said complex compound on said substrate; and (f) completing said integrated circuit to include at least a portion of said thin film in an active component of said integrated circuit. - View Dependent Claims (3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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22. A method of fabricating an integrated circuit including a thin film of a compound containing at least two metals, said method comprising steps of:
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(a) providing;
a liquid precursor suitable for forming said compound; and
a deposition system comprising a first chamber, a deposition chamber containing a substrate, and a showerhead separating said first chamber and said deposition chamber;wherein said liquid precursor comprises at least one metal polyalkoxide compound containing said at least two metals, said at least two metals selected from the group consisting of strontium, calcium, barium, cadmium, lead, tantalum, hafnium, tungsten, niobium, zirconium, bismuth, scandium, yttrium, lanthanum, antimony, chromium, molybdenum, vanadium, ruthenium and thallium; (b) forming a mist of said liquid precursor; (c) gasifying said mist to form a gasified precursor; (d) flowing said gasified precursor through said showerhead into said deposition reactor; (e) reacting said gasified precursor in said deposition reactor to form said thin film on said substrate; and (f) completing said integrated circuit to include at least a portion of said thin film of said layered superlattice material compound in an active component of said integrated circuit. - View Dependent Claims (23, 24, 25, 26, 27, 28, 29)
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30. A method of fabricating an integrated circuit including a thin film of a compound containing at least two metals, said method comprising steps of:
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(a) providing a plurality of liquid precursors each containing a metal compound containing at least one of said two metals, wherein said at least two metals are selected from the group consisting of strontium, calcium, barium, cadmium, lead, tantalum, hafnium, tungsten, niobium, zirconium, bismuth, scandium, yttrium, lanthanum, antimony, chromium, molybdenum, vanadium, ruthenium and thallium; (b) forming a mist of each of said liquid precursors; (c) mixing said mists to create a combined mist; (d) gasifying said combined mist to form a gasified precursor; (e) transporting said gasified precursor to a deposition reactor using at least one carrier gas; and (f) reacting said gasified precursor in said deposition reactor to form said thin film on said substrate; and (i) completing said integrated circuit to include at least a portion of said thin film of said compound in an active component of said integrated circuit.
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31. A method of fabricating an integrated circuit including a thin film of a compound containing at least two metals, said method comprising steps of:
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(a) providing a plurality of liquid precursors suitable for forming said compound; and
a deposition reactor containing a substrate wherein said at least two metals are contained in said liquid precursors and selected from the group consisting of strontium, calcium, barium, cadmium, lead, tantalum, hafnium, tungsten, niobium, zirconium, bismuth, scandium, yttrium, lanthanum, antimony, chromium, molybdenum, vanadium, ruthenium and thallium;(b) flowing said liquid precursors at controlled flow rates to a mixer; (c) mixing said liquid precursors to form a combined liquid precursor just prior to forming a mist; (d) forming a mist of said combined liquid precursor; (e) gasifying said mist to form a gasified precursor; (f) flowing said gasified precursor into said deposition reactor; and (g) reacting said gasified precursor in said deposition reactor to form said thin film of said compound on said substrate.
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Specification