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Optical techniques of measuring endpoint during the processing of material layers in an optically hostile environment

  • US 6,110,752 A
  • Filed: 08/27/1997
  • Issued: 08/29/2000
  • Est. Priority Date: 09/17/1992
  • Status: Expired due to Fees
First Claim
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1. During the processing of a semiconductor structure including a substrate, a patterned layer carried thereby and a dielectric layer extending across the patterned layer with an uneven exposed dielectric surface that is raised over remaining portions of the patterned layer and low therebetween, a method of monitoring a process of planarizing said exposed surface while it is occurring, comprising:

  • directing a radiation beam through the substrate and the dielectric layer to strike at least the low portion of the exposed surface to reflect at least a portion of said beam from said low surface portion and back through the dielectric layer and the substrate, anddetecting, from at least the reflected portion of the radiation beam, a commencement of material being removed from the low portion of the dielectric layer, thereby indicating when the raised portions have been removed and the exposed surface is planarized.

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