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Method for forming an ohmic electrode

  • US 6,110,813 A
  • Filed: 04/03/1998
  • Issued: 08/29/2000
  • Est. Priority Date: 04/04/1997
  • Status: Expired due to Fees
First Claim
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1. A method for forming an ohmic electrode, comprising the steps of:

  • forming an insulator film on a surface of a substrate made of silicon carbide, the insulator film having an opening through which the surface of the substrate is exposed;

    depositing a metal film in the opening on the substrate; and

    forming an ohmic electrode of the metal film by heating the metal film through irradiation of laser light onto the substrate and thereby forming an ohmic contact between the metal film and the substrate.

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