Method of forming multiple gate oxide thicknesses using high density plasma nitridation

• US 6,110,842 A
• Filed: 04/22/1998
• Issued: 08/29/2000
• Est. Priority Date: 06/07/1996
• Status: Expired due to Term

• Current Assignee: Texas Instruments, Inc.
• Original Assignee: Texas Instruments, Inc.
• Inventors: Okuno, Yasutoshi, Hattangady, Sunil V.
• Primary Examiner(s): Bowers, Charles
• Assistant Examiner(s): NGUYEN, THANH T
• Application Number:
  US09/064,455
• Time in Patent Office: 860 Days
• Field of Search: 438/775-777, 438/981, 438/769, 438/791, 438/792, 438/786, 438/258, 438/266-267, 438/513, 257/638-640, 257/649
• US Class Current: 438/776
• CPC Class Codes: H01L 21/28185 with a treatment, e.g. annealing, after the formation of the gate insulator and before the formation of the definitive gate conductor
• CPC Class Codes: H01L 21/28202 in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
• CPC Class Codes: H01L 21/823462 with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
• CPC Class Codes: H01L 29/518 the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
• CPC Class Codes: Y10S 438/981 Utilizing varying dielectric thickness

Abstract

A method for forming integrated circuits having multiple gate oxide thicknesses. A high density plasma is used for selective plasma nitridation to reduce the effective gate dielectric thickness in selected areas only. In one embodiment, a pattern (12) is formed over a substrate (10) and a high density plasma nitridation is used to form a thin nitride or oxynitride layer (18) on the surface of the substrate (10) . The pattern (12) is removed and oxidation takes place. The nitride (or oxynitride) layer (18) retards oxidation (20b), whereas, in the areas (20a) where the nitride (or oxynitride) layer (18) is not present, oxidation is not retarded. In another embodiment, a thermal oxide is grown. A pattern is then placed that exposes areas where a thinner effective gate oxide is desired. The high density plasma nitridation is performed converting a portion of the gate oxide to nitride or oxynitride. The effective thickness of the combined gate dielectric is reduced.

Claims

1. A method of forming a dielectric layer having at least two effective thicknesses, comprising the steps of:

forming a masking layer over a structure, said masking layer covering a first area of said structure;

subjecting said structure with said masking layer to a high density plasma nitridation having a plasma density in the range of 10¹⁰ to 10¹² cm^-3 ;

removing said masking layer;

oxidizing said structure.

2. The method of claim 1, wherein said plasma nitridation uses a nitrogen containing precursor selected from the group consisting of N₂ or NH₃ or a mixture thereof with an inert gas or an oxidizing gas.

3. The method of claim 1, wherein said plasma nitridation occurs at a temperature in the range of 77K-773 K.

4. The method of claim 1, wherein said plasma nitridation occurs at a pressure in the range of 1 to 50 mTorr.

5. The method of claim 1, wherein said plasma nitridation comprises a nitrogen flow in the range of 1 to 100 sccm.

6. The method of claim 1, wherein said plasma nitridation comprises a duration in the range of 1 to 300 seconds.

7. The method of claim 1, wherein said plasma nitridation comprises a substrate bias in the range of 0 to 200 Volts.

12. The method of claim 1, wherein said nitrogen-containing plasma occurs at a pressure in the range of 1 to 50 mTorr.

8. A method of manufacturing a gate dielectric having at least two effective thicknesses, comprising the steps of:

forming a dielectric layer over a structure;

forming a masking layer over said dielectric, said masking layer exposing a portion of said dielectric layer;

subjecting said exposed portion of said dielectric layer to a high density nitrogen-containing plasma having a plasma density in the range of 10¹⁰ to 10¹² cm^-3 ;

removing said masking layer.

9. The method of claim 8, wherein said subjecting step converts a surface of said portion of said dielectric layer to a nitride or oxynitride layer, thereby reducing the effective thickness of said gate dielectric.

10. The method of claim 8, wherein said nitrogen-containing plasma uses a nitrogen containing precursor selected from the group comprising N₂, NH₃, NO, N₂ O, or a mixture thereof with or without an inert gas.

11. The method of claim 8, wherein said nitrogen-containing plasma occurs at a temperature in the range of 77 K-773 K.

13. The method of claim 8, wherein said nitrogen-containing plasma comprises a nitrogen flow in the range of 1 to 100 sccm.

14. The method of claim 8, wherein said nitrogen-containing plasma nitridation comprises a duration in the range of 1 to 300 seconds.

15. The method of claim 8, wherein said nitrogen-containing plasma comprises a substrate bias in the range of 0 to 200 Volts.