Gas-sensing semiconductor devices

• US 6,111,280 A
• Filed: 09/14/1999
• Issued: 08/29/2000
• Est. Priority Date: 01/15/1997
• Status: Expired due to Term

• Current Assignee: Ams Sensors UK Limited (Ams-Osram AG)
• Original Assignee: University of Warwick
• Inventors: Gardner, Julian, Udrea, Florin
• Primary Examiner(s): Wojiechowicz, Edward
• Application Number:
  US09/341,794
• Time in Patent Office: 350 Days
• Field of Search: 257/253, 257/401, 257/414, 257/347
• US Class Current: 257/253
• CPC Class Codes: G01N 27/128 Microapparatus

Abstract

A gas-sensing semiconductor device 1 is fabricated on a silicon substrate 2 having a thin silicon oxide insulating layer 3 on one side and a thin silicon layer 4 on top of the insulating layer 3 using CMOS SOI technology. The silicon layer 4 may be in the form of an island surrounded by a silicon oxide insulating barrier layer 4 formed by the known LOCOS oxidation technique, although other lateral isolation techniques may also be used. The device 1 includes at least one sensing area provided with a gas-sensitive layer 18, a MOSFET heater 6 for heating the gas-sensitive layer 18 to promote gas reaction with the gas-sensitive layer 18 and a sensor 16, which may be in the form of a chemoresistor, for providing an electrical output indicative of gas reaction with the gas-sensitive layer 18. As one of the final fabrication steps, the substrate 2 is back-etched so as to form a thin membrane 20 in the sensing area. Such a device can be produced at low cost using conventional CMOS SOI technology.

Claims

1. A gas-sensing semiconductor device comprising a semiconductor substrate (2), a thin insulating layer (3) on one side of the substrate, and a thin semiconductor layer (4) on top of the thin insulating layer, wherein the device includes at least one sensing area in which the material of the substrate has been removed to leave a membrane (20) formed by the thin insulating layer and the thin semiconductor layer, and wherein the at least one sensing area is provided with a gas-sensitive layer (18, 43) and a heater (6, 42, 52, 62, 73, 83) for heating the gas-sensitive layer to promote gas reaction with the gas-sensitive layer, and a sensor (16, 42, 72, 82) for providing an electrical output indicative of gas reaction with the gas-sensitive layer, characterised in that the at least one sensing area incorporates a MOSFET formed in the thin semiconductor layer (4) and forming part of the heater and/or sensor.

2. A device according to claim 1, wherein the heater (6, 42, 52, 62, 73, 83) incorporates said MOSFET in the vicinity of the gas-sensitive layer (18, 43).

3. A device according to claim 1, wherein the gas-sensitive layer (18, 43) is incorporated in the gate of said MOSFET so that the threshold of the MOSFET changes in response to gas reaction with the gas-sensitive layer.

4. A device according to claim 3, wherein the gate comprises a conductive polymer layer which acts as the gas-sensitive layer.

5. A device according to claim 1, wherein a gate electrode (62) is applied to the back side of the thin insulating layer (3) in order to control a heating current in said MOSFET.

6. A device according to claim 1, wherein a gas-permeable metal layer (45) is applied on top of the gas-sensitive layer (18, 43) to allow gas to diffuse through the gas-permeable metal layer towards the gas-sensitive layer.

7. A device according to claim 1, wherein the sensor (16, 42, 72, 82) incorporates at least said MOSFET in the vicinity of the gas-sensitive layer (18, 43).

8. A device according to claim 1, which has been produced utilising CMOS SOI or bi-CMOS SOI fabrication steps.

9. A device according to claim 1, wherein the heater incorporates a heater resistor (52) applied to the back side of the thin insulating layer (3) in the at least one sensing area.

10. A device according to claim 1, wherein the gas-sensitive layer (18) incorporates part of a chemoresistor sensor (16, 82).

11. A device according to claim 1, wherein the at least one sensing area incorporates temperature sensing means.

12. A device according to claim 11, wherein the temperature sensing means comprises at least one bipolar transistor.

13. A device according to claim 1, wherein the material of the substrate (2) has been removed in at least one sensing area by back etching.

14. A device according to claim 1, wherein the thin insulating layer (3) is of silicon oxide and the thin semiconductor layer (4) is of silicon.

15. A device according to claim 1, wherein the at least one sensing area is integrated with at least one electronic circuit area incorporating associated circuitry (22, 24).

16. A device according to claim 1, wherein said MOSFET is a fully depleted MOSFET in the thin semiconductor layer (4) laterally isolated by LOCOS oxidation.

17. A device according to claim 1, wherein the sensing area incorporates more than one said MOSFET formed in the thin semiconductor layer (4), the MOSFET'"'"'s forming a heater (73, 83) and a sensor (72, 82) adjacent one another in the thin semiconductor layer (4).

18. A device according to claim 2, wherein the gas-sensitive layer (18, 43) is incorporated in the gate of said MOSFET so that the threshold of the MOSFET changes in response to gas reaction with the gas-sensitive layer.

19. A device according to claim 16, wherein the gate comprises a conductive polymer layer which acts as the gas-sensitive layer.

20. A device according to claim 2, wherein the at least one sensing area incorporates temperature sensing means.