Semiconductor device having high breakdown voltage and method of manufacturing the same

• US 6,111,290 A
• Filed: 10/26/1998
• Issued: 08/29/2000
• Est. Priority Date: 04/11/1996
• Status: Expired due to Term

• Current Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Original Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Inventors: Nakamura, Katsumi, Uenishi, Akio
• Primary Examiner(s): Jackson, Jr., Jerome
• Application Number:
  US09/178,767
• Time in Patent Office: 673 Days
• Field of Search: 257/331, 257/139, 257/341, 257/152, 257/330
• US Class Current: 257/331
• CPC Class Codes: H01L 29/0653 adjoining the input or output region of a field-effect device, e.g. the source or drain region
• CPC Class Codes: H01L 29/0696 of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
• CPC Class Codes: H01L 29/402 Field plates
• CPC Class Codes: H01L 29/407 Recessed field plates, e.g. trench field plates, buried field plates
• CPC Class Codes: H01L 29/66348 with a recessed gate
• CPC Class Codes: H01L 29/7397 and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236

Abstract

In a semiconductor device with a high breakdown voltage, insulating layers are buried at regions in n^- silicon substrate located between gate trenches which are arranged with a predetermined pitch. This structure increases a carrier density at a portion near an emitter, and improves characteristic of an IGBT of a gate trench type having a high breakdown voltage.

Claims

1. A semiconductor device comprising an insulated gate bipolar transistor of a gate trench type having a high breakdown voltage comprising:

a semiconductor substrate of a first conductivity type having first and second main surfaces;

gate trenches, each having a first groove formed at a predetermined region of said first main surface and extending from said first main surface into said semiconductor substrate to a depthwise direction, a gate insulating film covering an inner surface of said first groove, and an electrode filling said first groove and made of an electrical conductor;

an impurity region of the first conductivity type formed near said first main surface and located in the vicinity of said gate trench;

a first main electrode layer covering said first main surface, opposed to said gate trench with an insulating film therebetween and electrically connected to said impurity regions and said semiconductor substrate;

a second impurity layer of the second conductivity type formed at said second main surface; and

a second main electrode layer formed at a surface of said second impurity layer, wherein each gate trench is spaced from another gate trench with a predetermined pitch, and a plurality of emitter trenches, not gate trenches, arranged between two gate trenches, each emitter trench having a second groove extending from said first main surface into said semiconductor substrate in a depthwise direction, an insulating film covering an inner surface of said second groove and second electrode filling said second groove are arranged at positions between said gate trenches, wherein a surface of the impurity region of the first conductivity type formed near the main surface exposed between emitter trenches is covered with an interlayer insulating film.

2. The semiconductor device with a high breakdown voltage according to claim 1, wherein

said semiconductor substrate further includes a first impurity layer of the second conductivity type extending from said first main surface into said semiconductor substrate in a depthwise direction.

3. The semiconductor device with a high breakdown voltage according to claim 1, wherein

said impurity region of the first conductivity type is formed as a pair, sandwiching said gate trench.

4. A semiconductor device comprising an insulated gate bipolar transistor of a gate trench type having a high breakdown voltage comprising:

a semiconductor substrate of a first conductivity type having first and second main surfaces;

gate trenches, each having a first groove formed at a predetermined region of said first main surface and extending from said first main surface into said semiconductor substrate to a depthwise direction, a gate insulating film covering an inner surface of said first groove, and an electrode filling said first groove and made of an electrical conductor;

an impurity region of the first conductivity type formed near said first main surface and located in the vicinity of said gate trench;

a first main electrode layer covering said first;

main surface, opposed to said gate trench with an insulating film therebetween and electrically connected to said impurity regions and said semiconductor substrate;

a second impurity layer of the second conductivity type formed at said second main surface; and

a second main electrode layer formed at a surface of said second impurity layer, wherein each gate trench is spaced from another gate trench with a predetermined pitch, and

a plurality of emitter trenches, not gate trenches, arranged between two gate trenches, each emitter trench having a second groove extending from said first main surface into said semiconductor substrate in a depthwise direction, an insulating film covering an inner surface of said second groove and second electrode filling said second groove are arranged at positions between said gate trenches, wherein a distance between a side wall of said emitter trench and a side wall of said gate trench is equal to or smaller than one-tenth of the pitch of said gate trenches.