Multiple color detection elevated pin photo diode active pixel sensor

• US 6,111,300 A
• Filed: 12/01/1998
• Issued: 08/29/2000
• Est. Priority Date: 12/01/1998
• Status: Expired due to Term

• Current Assignee: Aptina Imaging Corporation (ON Semiconductor Corporation)
• Original Assignee: Agilent Technologies Europe BV (Agilent Technologies, Inc.)
• Inventors: Perner, Frederick A., Cao, Min, Vook, Dietrich W., Vande Voorde, Paul J.
• Primary Examiner(s): Hardy, David
• Assistant Examiner(s): Wilson, Allan R.
• Application Number:
  US09/203,445
• Time in Patent Office: 637 Days
• Field of Search: 257/431, 257/440, 257/461, 257/458, 257/656
• US Class Current: 257/440
• CPC Class Codes: H01L 27/14609 Pixel-elements with integrated switching, control, storage or amplification elements scanning details of imagers (circuitry of solid-state image sensors H04N25/00); circuitry of imagers H04N25/70
• CPC Class Codes: H01L 27/14647 Multicolour imagers having a stacked pixel-element structure, e.g. npn, npnpn or MQW elements
• CPC Class Codes: Y02E 10/548 Amorphous silicon PV cells

Abstract

A color detection active pixel sensor. The color detection active pixel sensor includes a substrate. A diode is electrically connected to a first doped region of the substrate. The diode conducts charge when the diode receives photons having a first range of wavelengths. The substrate includes a second doped region. The second doped region conducts charge when receiving photons having a second range of wavelengths. The photons having the second range of wavelengths passing through the diode substantially undetected by the diode. The substrate can include a doped well within the substrate. The doped well conducts charge when receiving photons having a third range of wavelengths. The photons having the third range of wavelengths pass through the diode substantially undetected by the diode.

Claims

1. A color detection active pixel sensor comprising:

a substrate;

a diode located adjacent to the substrate, the diode electrically connected through an interconnection layer to a first doped region of the substrate, the diode conducting charge when the diode receives photons having a first range of wavelengths; and

a second doped region within the substrate, the second doped region conducting charge when receiving photons having a second range of wavelengths, the photons having the second range of wavelengths passing through the diode substantially undetected by the diode.

2. The color detection active pixel sensor as recited in claim 1, further comprising a doped well within the substrate, the doped well conducting charge when receiving photons having a third range of wavelengths, the photons having the third range of wavelengths passing through the diode substantially undetected by the diode.

3. The color detection active pixel sensor as recited in claim 1, wherein the diode comprises a PIN diode.

4. The color detection active pixel sensor as recited in claim 1, wherein the first range of wavelengths correspond approximately to the wavelength of blue light.

5. The color detection active pixel sensor as recited in claim 1, wherein the second range of wavelengths correspond approximately to the wavelength of green light.

6. The color detection active pixel sensor as recited in claim 2, wherein the third range of wavelengths correspond approximately to the wavelength of red light.

7. The color detection active pixel sensor as recited in claim 1, further comprising a fourth doped region within the substrate, the fourth doped region being electrically connected to a substrate ground.

8. The color detection active pixel sensor as recited in claim 1, further comprising a first insulation region between the first doped region and the second doped region.

9. The color detection active pixel sensor as recited in claim 2, further comprising a third doped region electrically connected to the doped well.

10. The color detection active pixel sensor as recited in claim 9, further comprising a second insulation region between the second doped region and the third doped region.

11. The color detection active pixel sensor as recited in claim 2, wherein the substrate is p-doped.

12. The color detection active pixel sensor as recited in claim 11, wherein the doped well comprises an N-well.

13. The color detection active pixel sensor as recited in claim 12, wherein the N-well comprises the second doped region.

14. The color detection active pixel sensor as recited in claim 13, wherein the N-well comprises the third doped region.

15. The color detection active pixel sensor as recited in claim 3, wherein the PIN diode comprises amorphous silicon.

16. The color detection active pixel sensor as recited in claim 1, further comprising a first charge sensor connected to the first doped region for detecting a first amount of charge conducted by the diode.

17. The color detection active pixel sensor as recited in claim 1, further comprising a second charge sensor connected to the second doped region for detecting a second amount of charge conducted by the second doped region.

18. The color detection active pixel sensor as recited in claim 9, further comprising a third charge sensor connected to the third doped region for detecting a third amount of charge conducted by the doped well.