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Magnetically-enhanced plasma chamber with non-uniform magnetic field

  • US 6,113,731 A
  • Filed: 01/02/1997
  • Issued: 09/05/2000
  • Est. Priority Date: 01/02/1997
  • Status: Expired due to Fees
First Claim
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1. A magnetically-enhanced plasma chamber for producing an improved instantaneous spatial uniformity of ion flux from the plasma to a semiconductor workpiece, comprising:

  • a chuck for holding a flat semiconductor workpiece so that the workpiece occupies a workpiece area;

    a plasma source for producing a plasma in a first region above the workpiece area; and

    a magnet configured to produce in a planar second region a magnetic field having a non-zero gradient such that, at every point in the second region, the magnetic field at that point has a direction that is approximately the vector cross product of (i) the gradient of the magnitude of the magnetic field at that point, and (ii) a vector extending perpendicularly from the workpiece area toward the plasma;

    wherein the second region is parallel to and adjacent to the workpiece area and has a surface area substantially greater than half of the workpiece area;

    wherein, at every instant, the magnetic field has a range of magnitudes in the second region which ranges between a minimum magnitude and a maximum magnitude, wherein the minimum magnitude occurs at only a single point; and

    wherein, at every instant, the magnetic field has a clockwise curvature relative to said single point when viewed from above the workpiece area.

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