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Semiconductor device

  • US 6,114,727 A
  • Filed: 01/07/1998
  • Issued: 09/05/2000
  • Est. Priority Date: 01/09/1997
  • Status: Expired due to Fees
First Claim
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1. A semiconductor device comprising:

  • a high-resistance first-conductivity-type base layer;

    a first-conductivity-type drain layer formed on one surface of the first-conductivity-type base layer;

    a second-conductivity-type base layer formed at the other surface of the first-conductivity-type base layer;

    a first-conductivity-type source layer formed at one surface of the second-conductivity-type base layer;

    a second-conductivity-type injection layer formed at said other surface of the first-conductivity-type base layer in a region different from a region where the second-conductivity-type base layer is formed;

    a trench formed at said other surface of the first-conductivity-type base layer between the second-conductivity-type base layer and the second-conductivity-type injection layer so as to extend from a surface of the first-conductivity-type source layer through the second-conductivity-type base layer into the first-conductivity-type base layer, the trench serving as a carrier barrier between the second-conductivity-type injection layer and the first-conductivity-type source layer;

    a first gate electrode buried in the trench with an insulating film interposed;

    a first main electrode formed on the first-conductivity-type drain layer;

    a second main electrode formed on the first-conductivity-type source layer; and

    a second gate electrode formed on the second-conductivity-type injection layer.

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