Circuit for driving semiconductor switches

• US 6,114,883 A
• Filed: 07/14/1998
• Issued: 09/05/2000
• Est. Priority Date: 07/15/1997
• Status: Expired due to Term

• Current Assignee: Dialog Semiconductor GmbH (Renesas Electronics Corporation)
• Original Assignee: Dialog Semiconductor GmbH (Renesas Electronics Corporation)
• Inventors: Knodgen, Horst
• Primary Examiner(s): Callahan, Timothy P.
• Assistant Examiner(s): Nguyen, Hai L.
• Application Number:
  US09/113,922
• Time in Patent Office: 784 Days
• Field of Search: 327/108, 327/109, 327/110, 327/111, 327/112
• US Class Current: 327/108
• CPC Class Codes: H03K 17/063 in field-effect transistor switches
• CPC Class Codes: H03K 17/6871 the output circuit comprising more than one controlled field-effect transistor

Abstract

A circuit includes a first control unit which controls a first semiconductor switch connecting an output of the circuit to a first supply voltage terminal and a second control unit which controls a second semiconductor switch connecting the output of the circuit to a second supply voltage terminal. A single operating voltage source supplies a voltage to the first control unit, whereas a rechargeable energy storage device supplies a voltage to the second control unit. One terminal of the operating voltage source is connected to the first supply voltage terminal and one terminal of the energy storage device is connected to the output of the circuit. The first control unit and the second control unit are connected with each other via a switching device which is switched by the first control unit and which transmits, preferably when the first semiconductor switch is closed and the second semiconductor switch is open, a current for charging the energy storage device and for transmitting control information from the first control unit to the second control unit.

Claims

1. A circuit comprising:

a first control unit which controls a first semiconductor switch connecting an output of the circuit to a first supply voltage terminal;

a second control unit which controls a second semiconductor switch connecting the output of the circuit to a second supply voltage terminal;

a single operating voltage source which supplies a first voltage to the first control unit;

a rechargeable energy storage device which supplies a second voltage to the second control unit;

a switching device connecting the first control unit to the second control unit;

wherein a terminal of the operating voltage source is connected to the first supply voltage terminal and a terminal of the energy storage device is connected to the output of the circuit, and wherein the switching device is switched by the first control unit and transmits a current from the first control unit to the second control unit, the current charging the energy storage device and transmitting control information.

2. The circuit of claim 1, wherein the first control unit defines a signal form of the current flowing through the switching device and wherein the second control unit identifies the signal form of the current so as to determine if the current is intended to charge the energy storage device or to transmit the control information.

3. The circuit of claim 1, wherein the switching device can be switched only when the first semiconductor switch is closed and the second semiconductor switch is open, and wherein a blocking potential is applied to the switching device when the first semiconductor switch is open and the second semiconductor switch is closed.

4. The circuit of claim 1, wherein the switching device is a diode.

5. The circuit of claim 1, wherein the semiconductor switches are transistors.

6. The circuit of claim 5, wherein the transistors are field-effect transistors.

7. The circuit of claim 1, wherein a high supply voltage is applied between the supply voltage terminals and wherein the switching device and the semiconductor switches have a high breakdown voltage.

8. The circuit of claim 1, wherein the energy storage device is a capacitor.

9. The circuit of claim 7, wherein the supply voltage is at least 400 volts.

10. The circuit of claim 7, wherein the breakdown voltage is at least as high as the supply voltage.