Switching circuit and semiconductor device
First Claim
1. A switching circuit, comprising:
- a first unit circuit connected in series with a second unit circuit, each said unit circuit including two field-effect transistors connected in series and an inductor that has one end connected to a connection point between said two field-effect transistors and another end thereof grounded;
wherein gates of said two field-effect transistors are commonly connected and a bias voltage to control turning on/off of said two field-effect transistors is equally applied through a resistance to said respective gates.
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Accused Products
Abstract
Disclosed is a switching circuit which has: at least one unit circuit connected in series, the unit circuit being composed of two field-effect transistors connected in series and an inductor that has one end connected to a connection point between the two field-effect transistors and another end grounded; wherein the gates of the two field-effect transistors are commonly connected and a bias voltage to control the turning on/off of the two field-effect transistors is equally applied through a resistance to the respective gates. Also disclosed is a semiconductor device which has: at least one unit element connected in series, the unit element being composed of two field-effect transistors connected in series each of which has a source electrode and a drain electrode disposed sandwiching a gate electrode, one of the source electrode and the drain electrode being used as a common electrode, and a via hole disposed on a semiconductor substrate to connect the common electrode with a ground potential, the via hole operating as an inductor: and a resistance disposed on a gate bias line to apply a bias voltage to control the turning on/off of the two field-effect transistors equally to a plurality of the gate electrodes; wherein the plurality of the gate electrodes are commonly connected.
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Citations
15 Claims
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1. A switching circuit, comprising:
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a first unit circuit connected in series with a second unit circuit, each said unit circuit including two field-effect transistors connected in series and an inductor that has one end connected to a connection point between said two field-effect transistors and another end thereof grounded; wherein gates of said two field-effect transistors are commonly connected and a bias voltage to control turning on/off of said two field-effect transistors is equally applied through a resistance to said respective gates. - View Dependent Claims (2, 3, 4)
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5. A switching circuit, comprising:
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a first unit circuit connected in series with a second unit circuit, said first unit circuit including a field-effect transistor, a first inductor that has one end connected to a source of said field-effect transistor and another end thereof grounded, and a second inductor that has one end thereof connected to a drain of said field-effect transistor and another end thereof grounded; wherein a gate of said field effect transistor is connected to a gate of another field-effect transistor and a bias voltage to control turning on/off of said field-effect transistor is equally applied through a resistance to said respective gates. - View Dependent Claims (6, 7)
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8. A switching circuit, comprising:
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a first unit circuit connected in series with a second unit circuit, said first unit circuit including a field-effect transistor, first and second transmission lines connected in series to a source of said field-effect transistor, third and fourth transmission lines connected in series to a drain of said field-effect transistor, a first inductor that has one end thereof connected to a connection point between said first and second transmission lines and another end thereof grounded, and a second inductor that has one end thereof connected to a connection point between said third and fourth transmission lines and another end grounded; wherein a gate of said field-effect transistor is connected to a gate of another field-effect transistor and a bias voltage to control turning on/off of said field-effect transistor is equally applied through a resistance to said respective gates. - View Dependent Claims (9, 10)
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11. A semiconductor device, comprising:
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a first unit element connected in series with a second unit element, said first unit element including two field-effect transistors connected in series each of which has a source electrode and a drain electrode disposed sandwiching a gate electrode therebetween, one of said source electrode and said drain electrode being used as a connection electrode for the series connection of said transistors, and a via hole disposed on a semiconductor substrate to connect said connection electrode with a ground potential, said via hole operating as an inductor; and a resistance disposed on a gate bias line to apply a bias voltage to control turning on/off of said two field-effect transistors equally to a plurality of said gate electrodes; wherein said plurality of said gate electrodes are commonly connected. - View Dependent Claims (12)
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13. A semiconductor device, comprising:
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a first unit element connected in series with a second unit element said first unit element including a field-effect transistor which has a source electrode and a drain electrode disposed sandwiching a gate electrode therebetween, a first via hole disposed through a semiconductor substrate to connect said source electrode with a ground potential, and a second via hole disposed on said semiconductor substrate to connect said drain electrode with said ground potential, said first and second via hole operating as inductors; and a resistance disposed on a gate bias line to apply a bias voltage to control turning on/off of said field-effect transistor equally to said gate electrode that is commonly connected to a gate electrode of another field-effect transistor.
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14. A semiconductor device, comprising:
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a first unit element connected in series with a second unit element, said first unit element including a field-effect transistor which has a source electrode provided with the function of first and second transmission lines and a drain electrode provided with the-function of third and fourth transmission lines are disposed sandwiching a gate electrode therebetween, a first via hole disposed through a semiconductor substrate to connect a connection point between said first and second transmission lines with a ground potential, and a second via hole disposed on said semiconductor substrate to connect a connection point between said third and fourth transmission lines with said ground potential, said first and second via hole operating as inductors; and a resistance disposed on a gate bias line to apply a bias voltage to control the turning on/off of said field-effect transistor equally to said gate electrode that is commonly connected to a gate electrode of a field effect transistor of said second unit element.
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15. A switching circuit, comprising:
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at least two unit circuits connected in series, each of said at least two unit circuits including two field-effect transistors connected in series, and an inductor having one end connected to a connection point between said two field-effect transistors and another end thereof grounded, wherein gates of said two field-effect transistors in said each of said at least two unit circuits are connected via a common resistance to a bias voltage-applying terminal, whereby said two field-effect transistors in said each of said at least two unit circuits are turned on and off in accordance with a bias voltage applied to said bias voltage-applying terminal.
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Specification