Resistive hydrogen sensing element

• US 6,114,943 A
• Filed: 05/26/1999
• Issued: 09/05/2000
• Est. Priority Date: 05/26/1999
• Status: Expired due to Fees

• Current Assignee: Lockheed Martin Energy Research Corporation (Martin Marietta Corporation)
• Original Assignee: UT-Battelle LLC
• Inventors: Lauf, Robert J.
• Primary Examiner(s): Gellner, Michael L.
• Assistant Examiner(s): EASTHOM, KARL D
• Application Number:
  US09/320,387
• Time in Patent Office: 468 Days
• Field of Search: 73/31.05, 73/31.06, 338/34, 338/35
• US Class Current: 338/34
• CPC Class Codes: H01C 13/02 Structural combinations of resistors impedance networks per se H03H
• CPC Class Codes: H01C 7/00 Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material consisting of loose powdered or granular material H01C8/00; resistors having potential barriers, e.g. field-effect resistors, H01L29/00; semiconductor devices sensitive to electromagnetic or corpuscular radiation, e.g. photoresistors, H01L31/00; magnetic field controlled resistors H10N50/10; bulk negative resistance effect devices H10N80/00

Abstract

Systems and methods are described for providing a hydrogen sensing element with a more robust exposed metallization by application of a discontinuous or porous overlay to hold the metallization firmly on the substrate. An apparatus includes: a substantially inert, electrically-insulating substrate; a first Pd containing metallization deposited upon the substrate and completely covered by a substantially hydrogen-impermeable layer so as to form a reference resistor on the substrate; a second Pd containing metallization deposited upon the substrate and at least a partially accessible to a gas to be tested, so as to form a hydrogen-sensing resistor; a protective structure disposed upon at least a portion of the second Pd containing metallization and at least a portion of the substrate to improve the attachment of the second Pd containing metallization to the substrate while allowing the gas to contact said the second Pd containing metallization; and a resistance bridge circuit coupled to both the first and second Pd containing metallizations. The circuit determines the difference in electrical resistance between the first and second Pd containing metallizations. The hydrogen concentration in the gas may be determined. The systems and methods provide advantages because adhesion is improved without adversely effecting measurement speed or sensitivity.

Claims

1. An apparatus, comprising:

a substantially inert, electrically-insulating substrate;

a first Pd containing thin film metallization deposited upon said substrate and substantially covered by a substantially hydrogen-impermeable layer, thereby forming a reference resistor on said substrate;

a second Pd containing thin film metallization deposited upon said substrate and at least a partially accessible to a gas to be tested, thereby forming a hydrogen-sensing resistor on said substrate;

a protective structure disposed upon at least a portion of said second Pd containing metallization and at least a portion of said substrate to improve the attachment of said second Pd containing metallization to said substrate while allowing said gas to contact said second Pd containing metallization, wherein said substantially hydrogen impermeable layer and said protective structure compose a substantially dense dielectric material deposited upon said sensor in a single operation through a common maskwork; and

a resistance bridge circuit coupled to both said first Pd containing metallization and said second Pd containing metallization, said resistance bridge circuit determining the difference in electrical resistance between said first Pd containing metallization and said second Pd containing metallization, whereby a hydrogen concentration in said gas may be determined.

2. An apparatus in accordance with claim 1, wherein said first Pd containing metallization and said second Pd containing metallization form at least part of a Wheatstone resistance bridge circuit.

3. An apparatus in accordance with claim 1, wherein both said first Pd containing metallization and said second Pd containing metallization include a Pd alloy.

4. An apparatus, comprising:

a substantially inert, eclectically-insulating substrate;

a first Pd containing metallization deposited upon said substrate and substantially covered by a substantially hydrogen-impermeable layer, thereby forming a reference resistor on said substrate;

a second Pd containing metallization deposited upon said substrate and at least a partially accessible to a gas to be tested, thereby forming a hydrogen-sensing resistor on said substrate;

a protective structure disposed upon at least a portion of said second Pd containing metallization and at least a portion of said substrate to improve the attachment of said second Pd containing metallization to said substrate while allowing said gas to contact said second Pd containing metallization; and

a resistance bridge circuit coupled to both said first Pd containing metallization and said second Pd containing metallization, said resistance bridge circuit determining the difference in electrical resistance between said first Pd containing metallization and said second Pd containing metallization, whereby a hydrogen concentration in said gas may be determined,

wherein said substantially hydrogen impermeable layer and said protective structure composes a substantially dense dielectric material deposited in a single operation through a common network.

5. A hydrogen sensor, comprising:

a substantially inert, electrically-insulating substrate;

a first thick film metallization deposited on said substrate, said first thick film metallization forming a resistor on said substrate, said first thick film metallization including a sintered composition of Pd and a sinterable binder, said metallization deposited upon said substrate and completely covered by a substantially hydrogen-impermeable layer, thereby forming a reference resistor on said substrate;

a second thick film metallization deposited on said substrate, said second thick film metallization forming a resistor on said substrate, said second thick film metallization including said sintered composition of Pd and said sinterable binder, said second thick film metallization at least partially accessible to a gas to be tested, thereby forming a hydrogen-sensing resistor on said substrate;

a protective structure disposed upon at least a portion of said second metallization and at least a portion of said substrate thereby improving the attachment of said second metallization to said substrate at selected places along its surface while allowing said gas to contact said second metallization in other selected places, wherein said substantially hydrogen-impermeable layer and said protective structure compose a thick-film dielectric material deposited upon said hydrogen sensor in a single operation through a common maskwork; and

a resistance bridge circuit coupled to both said reference resistor and said hydrogen-sensing resistor, said resistance bridge circuit determining the difference in electrical resistance between said first and second metallizations, whereby the hydrogen concentration in said gas may be determined.

6. A hydrogen sensor in accordance with claim 5, wherein both said first thick film metallization and said second thick film metallization include a Pd alloy.

7. A resistive hydrogen sensor, comprising:

a substantially inert, electrically-insulating substrate;

a first Pd containing metallization deposited upon said substrate and completely covered by a hydrogen-impermeable layer, thereby forming a reference resistor on said substrate;

a second Pd containing metallization deposited upon said substrate and at least partially accessible to a gas to be tested, thereby forming a hydrogen-sensing resistor;

a substantially continuous protective structure disposed upon said second metallization and said substrate thereby improving the attachment of said metallization to said substrate, said protective structure containing interconnected porosity, whereby said gas may contact said metallization in selected places;

a resistance bridge circuit coupled to both said reference resistor and said hydrogen-sensing resistor, said resistance bridge circuit determining the difference in electrical resistance between said first and second metallizations, whereby the hydrogen concentration in said gas may be determined; and

wherein said hydrogen-impermeable layer and said protective structure are separately deposited as thick films and then co-fired in a single sintering operation.