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Image sensor producing at least two integration times from each sensing pixel

  • US 6,115,065 A
  • Filed: 11/07/1996
  • Issued: 09/05/2000
  • Est. Priority Date: 11/07/1995
  • Status: Expired due to Term
First Claim
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1. An imaging device, comprising:

  • a substrate formed of a semiconductor material;

    an image detector array, having a plurality of pixel circuits formed on said substrate, each pixel circuit generating a pixel signal indicative of a pixel of an image;

    a first signal buffer, formed on said substrate and coupled to respectively store pixel signals from a first group of said pixel circuits;

    a second signal buffer, formed on said substrate and coupled to respectively store pixel signals from a second group of said pixel circuits, wherein said second group is displaced from said first group by a predetermined number of pixel circuits; and

    a control circuit coupled to control said image detector array and said first and second signal buffers, said control circuit controlling reading out pixel circuits into said first buffer with a first integration time and controlling reading out pixel circuits into said second buffer with a second integration time different than said first integration time, said first and second buffers storing two different signals with two different integration times for each pixel circuit,wherein said first and second integration times have a difference which depends on said predetermined number of pixel circuits between said first and second groups,wherein said control circuit is adapted to select signals with said first integration time from a first group of pixel circuits and signals with said second integration time from a second group of pixel circuits to form said single frame where said first group of pixel circuits receive less light than said second group of pixel circuits.

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