Method for determining the temperature of semiconductor substrates from bandgap spectra

• US 6,116,779 A
• Filed: 03/10/1997
• Issued: 09/12/2000
• Est. Priority Date: 03/10/1997
• Status: Expired due to Fees

• Current Assignee: Johnson, Shane R., Tiedje J. Thomas
• Original Assignee: Johnson, Shane R., Tiedje J. Thomas
• Inventors: Johnson, Shane R., Tiedje, J. Thomas
• Primary Examiner(s): Gutierrez, Diego
• Assistant Examiner(s): Fernandez, Maria
• Application Number:
  US08/814,599
• Time in Patent Office: 1,282 Days
• Field of Search: 374/161, 374/120, 374/131
• US Class Current: 374/161
• CPC Class Codes: G01K 11/14 of inorganic materials

Abstract

An optical method for measuring the temperature of a substrate material with a temperature dependent band edge. In this method both the position and the width of the knee of the band edge spectrum of the substrate are used to determine temperature. The width of the knee is used to correct for the spurious shifts in the position of the knee caused by: (i) thin film interference in a deposited layer on the substrate; (ii) anisotropic scattering at the back of the substrate; (iii) the spectral variation in the absorptance of deposited layers that absorb in the vicinity of the band edge of the substrate; and (iv) the spectral dependence in the optical response of the wavelength selective detection system used to obtain the band edge spectrum of the substrate. The adjusted position of the knee is used to calculate the substrate temperature from a predetermined calibration curve. This algorithm is suitable for real-time applications as the information needed to correct the knee position is obtained from the spectrum itself. Using a model for the temperature dependent shape of the absorption edge in GaAs and InP, the effect of substrate thickness and the optical geometry of the method used to determine the band edge spectrum, are incorporated into the calibration curve.

Claims

1. An optical method for measuring the temperature of a semiconductor substrate material in a process chamber comprising:

(a) emitting radiation from a light source thereby causing broad spectrum radiation to be incident upon the substrate;

(b) using a wavelength selective detection system to measure a band edge spectrum of the substrate;

(c) analyzing the band edge spectrum to determine a position of a knee of the spectrum;

(d) analyzing the band edge spectrum to determine a width of the knee of the spectrum;

(e) determining a corrected position of the knee of the spectrum using the width of the knee of the spectrum, and;

(f) computing the temperature of the substrate from the corrected position of the knee of the spectrum.

2. A method as claimed in claim 1 wherein the corrected position of the knee is determined by adding a term to the determined knee position, the term being proportional to the width of the knee, and the temperature is computed by comparing the corrected position of the knee to a calibration curve.

3. A method as claimed in claim 2 wherein the term proportional to the width of the knee is adjusted to correct for the effect on the determined knee position of the thin film interference oscillations caused by the growth of the thin film with a different index of refraction on the substrate.

4. A method as claimed in claim 3 wherein the substrate material is gallium arsenide and an interference oscillation pattern is due to the thin film of aluminum gallium arsenide deposited on the substrate.

5. A method as claimed in claim 2 wherein the term proportional to the width of the knee is adjusted to correct the determined knee position for the effect of a thin film of an optically absorbing semiconductor material which is deposited on the semiconductor substrate.

6. A method as claimed in claim 5 wherein the absorbing semiconductor material is indium gallium arsenide and the substrate is gallium arsenide or indium phosphide.

7. A method as claimed in claim 2 wherein the band edge spectrum is measured in an optical measurement configuration in which the light source and the wavelength selective detection system are both on the same side of the substrate.

8. A method as claimed in claim 2 wherein the substrate material is gallium arsenide or indium phosphide.

9. A method as claimed in claim 2 wherein the term proportional to the width of the knee is adjusted to correct for the effect of a wavelength dependent throughput in the wavelength selective detection system.

10. A method as claimed in claim 2 wherein the term that is added to the determined knee position corrects for the effect of differences in the scattering properties of the substrate relative to the scattering properties of a reference substrate.

11. A method as claimed in claim 1 wherein the temperature is computed from the measured position of the knee and the width of the knee while a thin film is being deposited on the semiconductor substrate.

12. A method as claimed in claim 1 wherein the temperature is obtained by comparing the corrected knee position with the calibration curve, and the corrected knee position is obtained from an Explicit Linear Knee Position Correction Equation.

13. A method as claimed in claim 1 wherein the width of the knee is used to correct the determined knee position for the effects of a time dependent change in the optical throughput of the detection system.

14. A method as claimed in claim 13 wherein a time dependence in the optical throughput is caused by sample rotation.

15. A method as claimed in claim 1 wherein the determined position and the width of the knee of the band edge spectrum are determined by a fit to a function which has an asymptotic linear behavior away from the knee of the spectrum.

16. A method for measuring substrate temperature as in claim 15 wherein the asymptotic linear function is the Exponential Knee Equation expressed as a function of photon energy or wavelength.

17. A method as claimed in claim 1 wherein the band edge spectrum is determined in an optical measurement configuration in which the light source and wavelength selective detection system are located on opposite sides of the substrate.

18. A method as claimed in claim 1 wherein the corrected position of the knee is determined by adding a term to the determined knee position that is proportional to a logarithm of the substrate thickness in order to correct for the effect of a difference in thickness of the substrate and a reference substrate.

19. An optical method for measuring the temperature of a semiconductor substrate material in a process chamber comprising:

(a) emitting radiation from a light source thereby causing broad spectrum radiation to be incident upon the substrate;

(b) using a wavelength selective detection system to measure a band edge spectrum of the substrate;

(c) analyzing the band edge spectrum to determine the position of a knee of the spectrum;

(d) determining a corrected knee position by adding a term to the determined knee position that corrects for the effects of changes in the positions of the light source or the wavelength selective detection system relative to their positions in the determination of a calibration curve, the term being proportional to the logarithm of an optical path length in the substrate, and;

(e) computing the temperature of the substrate by comparing the corrected knee position, with the position of a knee in a calibration curve from a reference substrate.