Method for manufacturing a rate-of-rotation sensor
First Claim
1. A method for manufacturing a rate-of-rotation sensor having an oscillator structure and being at least partially configured as an acceleration sensor, the rate-of-rotation sensor including a comb-shaped structure, a suspension mount for the oscillator structure and a substrate, the substrate including a first layer, a second insulating layer and a third layer, the method comprising the steps of:
- patterning the comb-shaped structure and conductor traces from the third layer;
after patterning the comb-shaped structure, at least partially etching the second insulating layer which is provided underneath the comb-shaped structure;
removing at least a portion of a passivation layer on the first layer in a region where the oscillator structure is to be patterned;
ablating the first layer to a particular thickness using a dry etching process in the region where the oscillator structure is to be patterned; and
patterning the oscillator structure from the first, the second insulating, and the third layers.
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Accused Products
Abstract
A rate-of-rotation sensor includes a three-layer system. The rate-of-rotation sensor and the conductor traces are patterned out of the third layer. The conductor traces are electrically insulated (isolated) by cutouts from other regions of the third layer and by a second electrically insulating layer from a first layer. Thus, a simple electrical contacting (configuration) is achieved that is patterned out of a three-layer system. Since the same etching process is used for the first and the third layer, an especially efficient manufacturing is possible.
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Citations
14 Claims
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1. A method for manufacturing a rate-of-rotation sensor having an oscillator structure and being at least partially configured as an acceleration sensor, the rate-of-rotation sensor including a comb-shaped structure, a suspension mount for the oscillator structure and a substrate, the substrate including a first layer, a second insulating layer and a third layer, the method comprising the steps of:
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patterning the comb-shaped structure and conductor traces from the third layer; after patterning the comb-shaped structure, at least partially etching the second insulating layer which is provided underneath the comb-shaped structure; removing at least a portion of a passivation layer on the first layer in a region where the oscillator structure is to be patterned; ablating the first layer to a particular thickness using a dry etching process in the region where the oscillator structure is to be patterned; and patterning the oscillator structure from the first, the second insulating, and the third layers. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method for manufacturing a rate-of-rotation sensor having an oscillator structure and being at least partially configured as an acceleration sensor, the rate-of-rotation sensor including a comb-shaped structure, a suspension mount for the oscillator structure and a substrate, the substrate including a first layer, a second insulating layer and a third layer, the method comprising the steps of:
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patterning the comb-shaped structure and conductor traces from the third layer; after patterning the comb-shaped structure, at least partially etching the second insulating layer which is provided underneath the comb-shaped structure; removing at least a portion of a passivation layer on the first layer, the first layer being a silicon-on-insulator (SOI) three-layer system, in a region where the oscillator structure is to be patterned; ablating the first layer to a particular thickness using one of a wet-chemical etching process and a dry etching process in the region where the oscillator structure is to be patterned; and after ablating the first layer, patterning the oscillator structure from the first, the second insulating, and the third layers. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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Specification