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Endpoint detection method and apparatus which utilize a chelating agent to detect a polishing endpoint

  • US 6,117,779 A
  • Filed: 12/15/1998
  • Issued: 09/12/2000
  • Est. Priority Date: 12/15/1998
  • Status: Expired due to Term
First Claim
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1. A method of planarizing a semiconductor wafer having a polishing endpoint layer that includes a ligand of a chelating agent, comprising the steps of:

  • polishing a first side of said wafer in order to remove said ligand from said wafer;

    determining that said chelating agent has bound said ligand due to said polishing step removing said ligand of said polishing endpoint layer; and

    terminating said polishing step in response to determining that said chelating agent has bound said ligand.

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