Two-phase bootstrapped CMOS switch drive technique and circuit

• US 6,118,326 A
• Filed: 11/06/1997
• Issued: 09/12/2000
• Est. Priority Date: 11/06/1997
• Status: Expired due to Term

• Current Assignee: Analog Devices, Inc.
• Original Assignee: Analog Devices, Inc.
• Inventors: Singer, Lawrence, Books, Todd L.
• Primary Examiner(s): Zweizig, Jeffrey
• Application Number:
  US08/965,266
• Time in Patent Office: 1,041 Days
• Field of Search: 326/88, 326/92, 327/390, 327/536
• US Class Current: 327/390
• CPC Class Codes: H03K 17/063 in field-effect transistor switches
• CPC Class Codes: H03K 19/01735 by bootstrapping, i.e. by positive feed-back

Abstract

A circuit that produces a gate drive voltage for a MOS transistor switch, that receives an input voltage "on" a source terminal, includes a first input that receives the input voltage, a second input that receives a bias voltage, and a voltage storage element. A first switch connects the voltage storage element to sample one of the input voltage and the bias voltage during a first of first and second non-overlapping time intervals. A second switch connects the voltage storage element to increase the sampled voltage by another of the input voltage and the bias voltage to the gate drive voltage during the second non-overlapping time interval, while maintaining the gate drive voltage less than a breakdown voltage of the MOS transistor switch. A third switch connects the voltage storage element to provide the gate drive voltage to the MOS transistor switch such that a gate-to-source voltage of the MOS transistor switch is maintained approximately constant.

Claims

1. A circuit that produces a control voltage for a transistor switch that receives an input voltage on a source terminal, the circuit comprising:

a first input that receives the input voltage;

a second input that receives a bias voltage;

a voltage storage element;

a first switch that connects the voltage storage element to sample the bias voltage during a first of first and second time internals;

a second switch that connects the voltage storage element to increase the sampled voltage by the input voltage to the control voltage during the second time interval, while maintaining the control voltage less than a breakdown voltage of the transistor switch; and

a third switch that connects the voltage storage element to provide the control voltage to the transistor switch during the second time interval.

2. The circuit claimed in claim 1 wherein the voltage storage element includes a capacitor.

3. The circuit claimed in claim 1 wherein the transistor switch includes a MOS transistor.

4. The circuit claimed in claim 3 wherein the control voltage drives a gate of the MOS transistor.

5. The circuit claimed in claim 3 wherein a gate-to-source voltage of the MOS transistor is maintained approximately constant during the second time interval.

6. The circuit claimed in claim 1 wherein the first and second time intervals are non-overlapping.

7. A method for producing a control voltage for a transistor switch that receives an input voltage on a terminal, the method comprising the steps of:

sampling a bias voltage onto a voltage storage element during a first of first and second time intervals;

increasing the sampled voltage by the input voltage to the control voltage during the second time interval, while maintaining the control voltage less than a breakdown voltage of the transistor switch; and

providing the control voltage to the transistor switch during the second time interval.

8. The method claimed in claim 7 wherein the transistor switch includes a MOS transistor.

9. The method claimed in claim 8 wherein the control voltage drives a gate of the MOS transistor.

10. The method claimed in claim 7 wherein the first and second time intervals are non-overlapping.

11. The method claimed in claim 8 wherein a gate-to-source voltage of the MOS transistor is maintained approximately constant during the second time interval.