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Crystal ion-slicing of single-crystal films

  • US 6,120,597 A
  • Filed: 02/17/1998
  • Issued: 09/19/2000
  • Est. Priority Date: 02/17/1998
  • Status: Expired due to Term
First Claim
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1. A method for detaching a single-crystal metal oxide film from a metal oxide crystal structure, said method comprising the steps of:

  • implanting ions into said crystal structure to form a damage layer within said crystal structure at an implantation depth below a top surface of said crystal structure, said top surface and said damage layer defining at least in part said single-crystal metal oxide film to be detached from said crystal structure; and

    chemically etching said damage layer to effect detachment of said single-crystal film metal oxide from said crystal structure.

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