Double heterojunction light emitting diode with gallium nitride active layer

• US 6,120,600 A
• Filed: 04/13/1998
• Issued: 09/19/2000
• Est. Priority Date: 05/08/1995
• Status: Expired due to Term

• Current Assignee: CREE Incorporated (Wolfspeed, Inc.)
• Original Assignee: CREE Incorporated (Wolfspeed, Inc.)
• Inventors: Edmond, John A., Kong, Hua-Shuang
• Primary Examiner(s): KUNEMUND, ROBERT M
• Application Number:
  US09/059,649
• Time in Patent Office: 890 Days
• Field of Search: 117/89, 117/104, 117/952
• US Class Current: 117/89
• CPC Class Codes: H01L 33/0025 comprising only AIIIBV compounds
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/325 characterised by the doping materials

Abstract

A double heterostructure for a light emitting diode comprises a layer of aluminum gallium nitride having a first conductivity type; a layer of aluminum gallium nitride having the opposite conductivity type; and an active layer of gallium nitride between the aluminum gallium nitride layers, in which the gallium nitride layer is co-doped with both a Group II acceptor and a Group IV donor, with one of the dopants being present in an amount sufficient to give the gallium nitride layer a net conductivity type, so that the active layer forms a p-n junction with the adjacent layer of aluminum gallium nitride having the opposite conductivity type.

Claims

1. A method of producing an active layer of zinc and silicon compensated n-type gallium nitride for a double heterostructure light emitting diode that emits in the blue portion of the visible spectrum, the method comprising:

introducing vaporized sources of gallium, nitrogen, silicon and zinc into a chemical vapor deposition system that includes a semiconductor substrate compatible with the growth of gallium nitride thereon; and

while

maintaining the temperature high enough to promote the epitaxial growth of zinc and silicon compensated gallium nitride, but lower than the temperature at which the gallium nitride would decompose.

2. A method according to claim 1 wherein the temperature is maintained lower than the temperature at which the surface morphology of the epitaxial layer would become unacceptable for further epitaxial growth thereon.

3. A method according to claim 1 wherein the temperature is maintained between about 800°

C. and 1050°

C.

4. A method according to claim 1 wherein the step of introducing a vaporized source of gallium comprises introducing trimethyl gallium.

5. A method according to claim 1 wherein the step of introducing a vaporized source of nitrogen comprises introducing ammonia.

6. A method according to claim 1 wherein the step of introducing a vaporized source of zinc comprises introducing diethyl zinc.

7. A method according to claim 1 wherein the step of introducing a vaporized source of silicon comprises introducing silane.