Removable liner design for plasma immersion ion implantation

• US 6,120,660 A
• Filed: 12/18/1998
• Issued: 09/19/2000
• Est. Priority Date: 02/11/1998
• Status: Expired due to Term

• Current Assignee: Silicon Genesis
• Original Assignee: Silicon Genesis
• Inventors: Chu, Paul K., Chan, Chung
• Primary Examiner(s): DIAMOND, ALAN D
• Application Number:
  US09/216,035
• Time in Patent Office: 641 Days
• Field of Search: 204/298.02, 204/298.04, 204/298.05, 204/298.06, 204/298.15, 204/298.11, 204/192.11, 204/192.12, 204/192.23, 118/728, 118/733, 118/723 I, 118/723 MP, 427/523, 427/527, 427/585, 427/569, 427/578
• US Class Current: 204/298.15
• CPC Class Codes: C23C 14/50 Substrate holders
• CPC Class Codes: C23C 14/564 Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
• CPC Class Codes: C23C 16/4404 Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
• CPC Class Codes: C23C 16/4581 characterised by material of construction or surface finish of the means for supporting the substrate
• CPC Class Codes: C23C 16/4587 the substrate being supported substantially vertically
• CPC Class Codes: C23C 16/507 using external electrodes, e.g. in tunnel type reactors
• CPC Class Codes: H01J 37/32412 Plasma immersion ion implantation
• CPC Class Codes: H01J 37/32477 characterised by the means for protecting vessels or internal parts, e.g. coatings
• CPC Class Codes: H01J 37/32559 Protection means, e.g. coatings

Abstract

A plasma treatment system (200) for implantation with a novel susceptor with a silicon coating (203). The system (200) has a variety of elements such as a chamber, which can have a silicon coating formed thereon, in which a plasma is generated in the chamber. The system (200) also has a susceptor disposed in the chamber to support a silicon substrate. The silicon coating reduces non-silicon impurities that may attach to the silicon substrate. The system (200) also includes a silicon liner, which is used to line inner portions of the chamber walls.

Claims

1. A plasma treatment system for implantation, said system comprising:

a vacuum chamber in which a plasma is generated in said chamber;

a silicon coated susceptor disposed in said chamber to support a silicon substrate, said silicon coated susceptor providing fewer non-silicon bearing impurities than can be sputtered off of the susceptor if uncoated during an implantation process; and

a silicon liner surrounding said susceptor said silicon liner comprising a plurality of panels, each of said panels including a plurality of substrates, which are coupled to each other on a frame structure.

2. The system of claim 1 wherein said substrates are selected from silicon substrates or quartz substrates.

3. The system of claim 1 further comprising:

an rf generator; and

at least two rf sources, each external to said vacuum chamber and each said rf sources electrically connected to said rf generator and juxtaposed to a respective one of a plurality of rf transparent windows, and operative to generate said plasma in the vacuum chamber;

said rf sources operative to produce a local, substantially uniform plasma proximate said substrate.

4. The system of claim 3 further comprising at least one tuning circuit, each said at least one tuning circuit electrically connected to one of said at least two rf sources.

5. The system of claim 1 wherein said silicon coated susceptor has a coating selected from silicon dioxide, quartz, polysilicon, amorphous silicon, or crystalline silicon.

6. The system of claim 5 wherein said silicon coated susceptor has a base metal selected from stainless steel or aluminum.

7. The system of claim 1 wherein said silicon substrate is a silicon bearing wafer.

8. The system of claim 1 wherein said chamber comprises a silicon base underlying said susceptor.

9. The system of claim 1 wherein said frame comprises stainless steel.

10. The system of claim 1 wherein said liner is removable.

11. The system of claim 1 wherein said system is provided in a cluster tool.