×

Methods of reducing proximity effects in lithographic processes

  • US 6,120,952 A
  • Filed: 10/01/1998
  • Issued: 09/19/2000
  • Est. Priority Date: 10/01/1998
  • Status: Expired due to Term
First Claim
Patent Images

1. A method of reducing proximity effects in a lithographic process wherein an integrated circuitry pattern is transferred from a mask onto a semiconductor substrate, the method comprising:

  • defining a desired spacing between a main feature which is to reside on the mask and which is to be transferred onto the substrate and a pair of adjacent proximity effects-correcting features disposed on opposing sides of the main feature; and

    after said defining, adjusting dimensions of the main feature relative to the pair of proximity effects-correcting features to achieve a desired transferred main feature dimension.

View all claims
  • 4 Assignments
Timeline View
Assignment View
    ×
    ×