Method of processing wafers with low mass support

• US 6,121,061 A
• Filed: 11/02/1998
• Issued: 09/19/2000
• Est. Priority Date: 11/03/1997
• Status: Expired due to Term

• Current Assignee: ASM America Incorporated (ASM International NV)
• Original Assignee: ASM America Incorporated (ASM International NV)
• Inventors: Raaijmakers, Ivo, Van Bilsen, Franciscus Bernardus Maria, Layton, Jason Mathew
• Primary Examiner(s): Booth, Richard
• Assistant Examiner(s): MURPHY, JOHN E
• Application Number:
  US09/184,491
• Time in Patent Office: 687 Days
• Field of Search: 438/14, 118/725, 118/666, 392/416, 392/418, 219/390, 165/253
• US Class Current: 438/14
• CPC Class Codes: C30B 25/10 Heating of the reaction chamber or the substrate
• CPC Class Codes: C30B 29/06 Silicon

Abstract

A method is provided for treating wafers on a low mass support. The method includes mounting a temperature sensor in proximity to the wafer, which is supported on the low mass support, such that the sensor is only loosely thermally coupled to the wafer. A temperature controller is programmed to critically tune the wafer temperature in a temperature ramp, though the controller directly controls the sensor temperature. A wafer treatment, such as epitaxial silicon deposition, is started before the sensor temperature has stabilized. Accordingly, significant time is saved for the treatment process, and wafer throughput improved.

Claims

1. A method of ramping a wafer to a stable temperature within a ramp time, comprising using a PID controller to control the temperature of a temperature sensor loosely thermally coupled to the wafer;

and starting a wafer treatment at a stable wafer temperature while the temperature of the sensor is ramping.

2. The method of claim 1, wherein the wafer and temperature sensor have a characteristic time constant greater than about 0.3 times the ramp time.

3. The method of claim 1, wherein the wafer and temperature sensor have a characteristic time constant greater than about 0.5 times the ramp time.

4. The method of claim 1, wherein the wafer is supported upon a low mass wafer holder.

5. The method of claim 4, wherein the temperature sensor senses the temperature at a distance between about 0.030 inch and 0.070 inch from the low mass wafer holder.

6. The method of claim 4, wherein the low mass wafer holder has a thermal mass less than about 3 times the thermal mass of the wafer.

7. The method of claim 6, wherein the low mass wafer holder has a thermal mass between about 0.5 and two times the thermal mass of the wafer.

8. The method of claim 1, wherein the wafer is supported within the processing chamber without a wafer holder susceptible to radiant heating.

9. The method of claim 1, wherein a plurality of thermocouples in proximity of the wafer are controlled using independent PID controller.

10. A method of processing a wafer in a semiconductor processing chamber, comprising:

placing the wafer in proximity to a temperature sensor within the reaction chamber;

ramping the temperature of the sensor with a temperature controller; and

starting a wafer treatment at a stable wafer temperature while the temperature of the sensor is ramping.

11. A method of processing a wafer in a semiconductor processing chamber, comprising:

supporting the wafer in the semiconductor processing chamber;

measuring the temperature of at least one temperature sensor in proximity to the wafer;

changing the temperature of the sensor with a controller in response to a controller setpoint curve and a sensor offset term; and

starting a wafer treatment at a steady state temperature before the sensor reaches a stable second temperature.

12. The method of claim 11, wherein the wafer treatment is started less than about 10 seconds after the controller setpoint reaches the second stable temperature.

13. The method of claim 12, wherein the wafer treatment is started less than about 5 seconds after the controller setpoint reaches the second stable temperature.

14. The method of claim 13, wherein the wafer treatment is started less than about 3 seconds after the controller setpoint reaches the second stable temperature.

15. The method of claim 11, further comprising ending the wafer treatment before the thermocouple reaches a stable second temperature.

16. The method of claim 11, wherein supporting the wafer comprises placing the wafer on a low mass wafer holder.

17. The method of claim 11, further comprising controlling the temperature of a plurality of temperature sensors distributed in proximity to the wafer to maintain a uniform temperature distribution across the wafer at the steady state temperature.

18. The method of claim 17, wherein the plurality of temperature sensors comprises a center thermocouple spaced below the wafer and a plurality of peripheral thermocouples spaced around a wafer edge.

19. A method of processing a wafer in a semiconductor processing chamber, comprising:

placing the wafer on a wafer holder mounted within the chamber;

sensing the temperature of at least one temperature sensor in proximity to the wafer holder;

changing the temperature of the sensor toward a first stable temperature;

changing the temperature of the wafer to a second stable temperature faster than the sensor is changed to the first stable temperature;

controlling the temperature of the sensor with a controller while changing the temperature of the sensor and changing the temperature of the wafer; and

starting a wafer treatment at the second stable temperature before the temperature of the sensor reaches the first stable temperature.

20. The method of claim 19, wherein changing the temperature of the wafer comprises changing the wafer temperature to the second stable temperature more than about 5 seconds faster than the sensor is changed to the first stable temperature.

21. The method of claim 19, wherein changing the temperature of the wafer comprises changing the wafer temperature to the second stable temperature more than about 25 seconds faster than the sensor is changed to the first stable temperature.

22. The method of claim 19, wherein changing the temperature of the wafer comprises changing the wafer temperature to the second stable temperature more than about 40 seconds faster than the sensor is changed to the first stable temperature.

23. The method of claim 19, wherein controlling the temperature of the sensor comprises controlling with a PID controller.

24. The method of claim 19, wherein the sensor comprises a thermocouple.

25. The method of claim 19, further comprising controlling the temperature of a plurality of peripheral thermocouples distributed in proximity to the wafer to maintain the first stable temperature uniformly across the wafer for a desired treatment time.

26. The method of claim 25, further comprising changing the temperature of the peripheral thermocouples to a plurality of third temperatures more slowly than the wafer is changed to the second stable temperature.

27. The method of claim 25, wherein each of the plurality of thermocouples are controlled with an independent temperature controller.

28. The method of claim 19, wherein the wafer holder comprises a low mass wafer holder.

29. The method of claim 19, further comprising changing the temperature of the wafer from the second stable temperature to a third temperature before the sensor reaches the first stable temperature.

30. The method of claim 19, further comprising starting a wafer treatment when the wafer reaches the second stable temperature.

31. The method of claim 30, wherein starting the wafer treatment comprises introducing epitaxial deposition reactant gases.

32. The method of claim 31, wherein the second stable temperature is stable within about ±

3-4°

C.

33. The method of claim 19, wherein the temperature sensor is spaced by more than about 0.010 inch from the wafer holder.

34. The method of claim 33, wherein the temperature sensor is spaced from the wafer holder by between about 0.030 inch and 0.070 inch.