Methods and devices related to electrodes for p-type group III nitride compound semiconductors

• US 6,121,127 A
• Filed: 11/16/1999
• Issued: 09/19/2000
• Est. Priority Date: 06/14/1996
• Status: Expired due to Term

• Current Assignee: Toyoda Gosei Company Limited (Toyota Motor Corporation)
• Original Assignee: Toyoda Gosei Company Limited (Toyota Motor Corporation)
• Inventors: Kozawa, Takahiro, Umezaki, Junichi, Shibata, Naoki, Uemura, Toshiya, Mori, Tomohiko, Asai, Makoto, Ohwaki, Takeshi
• Primary Examiner(s): Everhart, Caridad
• Assistant Examiner(s): LEE, GRANVILL D
• Application Number:
  US09/440,860
• Time in Patent Office: 308 Days
• Field of Search: 438/604, 438/602, 438/597, 257/744, 257/741, 257/745
• US Class Current: 438/604
• CPC Class Codes: H01L 21/28575 on semiconductor bodies comprising AIIIBV compounds
• CPC Class Codes: H01L 29/452 on AIII-BV compounds
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/40 Materials therefor

Abstract

An electrode for a Group III nitride compound semiconductor having p-type conduction that has a double layer structure. The first metal electrode layer comprising, for example, nickel (Ni) and the second metal electrode layer comprising, for example, gold (Au). The Ni layer is formed on the Group III nitride compound semiconductor having p-type conduction, and the Au layer is formed on the Ni layer. Heat treatment changes or reverses the distribution of the elements Ni and Au. Namely, Au is distributed deeper into the Group III nitride compound semiconductor than is Ni. As a result, the resistivity of the electrode is lowered and its ohmic characteristics are improved as well as its adhesive strength.

Claims

1. A method of forming an electrode of a Group III nitride compound semiconductor having p-type conduction comprising the steps of:

selecting an element of a first metal electrode layer having an ionization potential that is lower than that of an element of a second metal electrode layer;

selecting said element of said second metal electrode layer so that it has better ohmic contact to said Group III nitride compound semiconductor than said element of said first metal electrode layer;

forming said first metal electrode layer on said Group III nitride compound semiconductor;

forming said second metal electrode layer on said first metal electrode layer; and

carrying out heat treatment so that said element of said second metal electrode layer is distributed more deeply into said Group III nitride compound semiconductor than is said element of said first metal electrode layer.

2. The method of claim 1, wherein said element of said first metal electrode layer is at least one of nickel (Ni), iron (Fe), copper (Cu) chromium (Cr), tantalum (Ta), vanadium (V), manganese (Mn), aluminum (Al) and silver (Ag) and said element of said second metal electrode layer is at least one of palladium (Pd), gold (Au), iridium (Ir), and platinum (Pt).

3. The method of claim 1, wherein said element of said first metal electrode layer is nickel (Ni), and said element of said second metal electrode layer is gold (Au).

4. The method of claim 1, wherein said heat treatment is carried out in the range from about 400°

C. to 700°

C.

5. The method of claim 2, wherein said heat treatment is carried out in the range from about 400°

C. to 700°

C.

6. The method of claim 3, wherein said heat treatment is carried out in the range from about 400°

C. to 700°

C.

7. The method of claim 1, wherein said Group III nitride compound semiconductor satisfies the formula:

Al_x Ga_y In_1-x-y N, wherein 0≦

x≦

1, 0≦

y≦

0, and 0≦

x+y≦

1.

8. A method of claim 1, wherein said heat treatment is performed in an atmosphere that includes oxygen (O).

9. A method of claim 2, wherein said heat treatment is performed in an atmosphere that includes oxygen (O).

10. A method of claim 3, wherein said heat treatment is performed in an atmosphere that includes oxygen (O).

11. A method of claim 8, wherein said element of the first metal electrode is combined with oxygen (O) by heat treatment.

12. A method of claim 9, wherein said element of the first metal electrode is combined with oxygen (O) by heat treatment.

13. A method of claim 10, wherein said nickel (Ni) is combined with oxygen (O) by heat treatment.

14. A method of claim 11, wherein said element combined with said oxygen (O) distributes with a density higher at the surface of said electrode than at a bottom of said electrode.

15. A method of claim 12, wherein said element combined with said oxygen (O) distributes with a density higher at the surface of said electrode than at a bottom of said electrode.

16. A method of claim 13, wherein said nickel (Ni) combined with said oxygen (O) distributes with a density higher at the surface of said electrode than at a bottom of said electrode.