Abrasive articles comprising a fluorochemical agent for wafer surface modification

• US 6,121,143 A
• Filed: 09/19/1997
• Issued: 09/19/2000
• Est. Priority Date: 09/19/1997
• Status: Expired due to Term

• Current Assignee: 3M Innovative Properties Company (3M Company)
• Original Assignee: 3M Innovative Properties Company (3M Company)
• Inventors: Moore, George G., Kessel, Carl R., Messner, Robert P.
• Primary Examiner(s): Dawson, Robert
• Assistant Examiner(s): Robertson, Jeffrey B.
• Application Number:
  US08/933,870
• Time in Patent Office: 1,096 Days
• Field of Search: 156/345, 51/295, 428/145, 428/409, 428/447, 437/225, 437/946, 437/974, 438/692, 451/530
• US Class Current: 438/692
• CPC Class Codes: B24B 37/04 designed for working plane surfaces
• CPC Class Codes: B24D 3/00 Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
• CPC Class Codes: B24D 3/32 for porous or cellular structure
• CPC Class Codes: B24D 3/34 characterised by additives enhancing special physical properties, e.g. wear resistance, electric conductivity, self-cleaning properties
• CPC Class Codes: Y10T 428/24388 Silicon containing coating
• CPC Class Codes: Y10T 428/31 Surface property or characteristic of web, sheet or block
• CPC Class Codes: Y10T 428/31663 As siloxane, silicone or silane

Abstract

This invention relates to fixed abrasive articles and abrasive constructions containing at least one fluorochemical agent. The fixed abrasive articles and abrasive constructions are used in semiconductor wafer surface modification processes during the fabrication of semiconductor devices. Specifically, fixed abrasive articles comprise an abrasive composite that is coextensive with a backing and at least one fluorochemical agent associated with the composite. The invention further relates to methods of making fixed abrasive articles comprising at least one fluorochemical agent.

Claims

1. A fixed abrasive article comprising a fluorochemical agent for the modification of a surface of a semiconductor wafer, comprising:

(a) three-dimensional abrasive composites, each composite comprising a plurality of abrasive particles fixed and dispersed in a binder providing a textured exposed major surface of a fixed abrasive article;

(b) at least one fluorochemical agent associated with the abrasive composites; and

(c) a backing coextensive with the abrasive composites.

2. The article of claim 1, wherein at least one fluorochemical agent is selected from the group consisting of fluorochemical acrylates, fluorochemical methacrylates, fluorochemical epoxies, fluorochemical silanes, fluorochemical isocyanates, fluorochemical carboxylic acids and their salts and amides, fluorochemical phosphoric acids and their salts and amides, fluorochemical sulfonic acids and their salts and amides, fluorochemical phosphate esters, fluorochemical phosphate esters, fluorochemical alcohols, fluorochemical polyether oils, fluorochemical alkane waxes, fluorochemical ethers, fluorochemical esters, fluorochemical urethanes, fluorochemical amides, fluorochemical thermoplastics;

fluorochemical thermoplastic copolymers, and fluorochemical elastomers.

3. The article of claim 1 wherein at least the binder of the abrasive composite is associated with at least one fluorochemical agent.

4. The article of claim 3, wherein the fluorochemical agent is a fluorochemical polyether oil.

5. The article of claim 3, wherein the fluorochemical agent is a fluorochemical monofunctional acrylate.

6. The article of claim 3, wherein the fluorochemical agent is a fluorochemical difunctional acrylate.

7. The article of claim 1 wherein at least the abrasive particles of the abrasive composite is associated with at least one fluorochemical agent.

8. The article of claim 7, wherein the fluorochemical agent is a fluorochemical polyether oil.

9. The article of claim 1, wherein at least the surface of the abrasive composite is associated with at least one fluorochemical agent.

10. The article of claim 9, wherein the fluorochemical agent is a polymer comprising C_n F_2n+1 C₂ H₄ OCOCH═

CH₂ (n=5-12) and C₈ F₁₇ SO₂ N(Me)C₂ HOCOCH═

CH₂.

11. The article of claim 9, wherein the fluorochemical agent is a fluorochemical polyether oil.

12. The article of claim 9, wherein the fluorochemical agent is a fluorochemical silane.

13. The article of claim 12, wherein the fluorochemical silane is C₈ F₁₇ SO₂ N(Et)CH₂ CH₂ CH₂ Si(OMe)₃.

14. The article of claim 1, wherein the abrasive composite further comprises a filler.

15. The article of claim 14, wherein at least the filler of the abrasive composite is associated with the at least one fluorochemical agent.

16. An abrasive construction, comprising:

(a) a fixed abrasive article comprising three-dimensional abrasive composites, each composite comprising a plurality of abrasive particles fixed and dispersed in a binder, wherein the abrasive composites provide a textured exposed major surface of the fixed abrasive article and there is at least one fluorochemical agent associated with the abrasive composites;

(b) at least one resilient element generally coextensive with the fixed abrasive article; and

(c) at least one rigid element generally coextensive with and interposed between the resilient element and the fixed abrasive article, wherein the rigid element has a Young'"'"'s Modulus greater than that of the resilient element.

17. A method of modifying an exposed surface of a semiconductor wafer, comprising the steps of:

(a) contacting the surface with a fixed abrasive article comprising three-dimensional abrasive composites, each composite comprising a plurality of abrasive particles fixed and dispersed in a binder wherein the abrasive composites are associated with at least one fluorochemical agent and are coextensive with a backing; and

(b) moving the wafer and the abrasive article relative to each other to modify the surface of the wafer.

18. The method of claim 17, wherein the at least one fluorochemical agent is dispersed in a working liquid prior to the fluorochemical'"'"'s association with the abrasive composite.

19. The method of claim 17, wherein the surface of the wafer comprises metal.

20. The method of claim 19, wherein the metal is selected from the group consisting of gold, silver, tungsten, aluminum, copper, or mixtures thereof.

21. The method of claim 17, wherein the surface of the wafer comprises inorganic metal oxide.

22. The method of claim 21, wherein the inorganic metal oxide comprises silicon dioxide, doped silicon dioxide, or mixtures thereof.

23. The method of claim 22, wherein the doped silicon dioxide comprises boron, phosphorous, or mixtures thereof.

24. The method of claim 21, wherein the inorganic metal oxide is a fluorine modified silicon dioxide.

25. The method of claim 17, wherein the surface of the wafer comprises organic polymeric material.

26. The method of claim 25, wherein the organic polymeric material is polyimide.

27. A method of modifying an exposed surface of a semiconductor wafer, comprising the steps of:

(a) contacting the surface with a fixed abrasive article three-dimensional abrasive composites, each composite comprising a plurality of abrasive particles fixed and dispersed in a binder wherein the abrasive composites are associated with at least one fluorochemical and are coextensive with a backing; and

(b) moving the wafer and the abrasive article relative to each other to modify the surface of the wafer,

wherein the noise generated from the modification method is minimized by the association of the fluorochemical agent to the abrasive composite.

28. The method according to claim 27, wherein the at least one fluorochemical agent is a component of a working liquid.