Method and apparatus for establishing electrical contact between a wafer and a chuck

• US 6,121,783 A
• Filed: 04/22/1997
• Issued: 09/19/2000
• Est. Priority Date: 04/22/1997
• Status: Expired due to Term

• Current Assignee: Keithley Instruments, Inc.
• Original Assignee: Keithley Instruments, Inc.
• Inventors: Miles, Robert A., Horner, Gregory S., Kleefstra, Meindert J., Verkuil, Roger L.
• Primary Examiner(s): Snow, Walter E.
• Application Number:
  US08/839,217
• Time in Patent Office: 1,246 Days
• Field of Search: 327/754, 327/756, 327/765, 327/757
• US Class Current: 324/754.1
• CPC Class Codes: G01R 31/2831 Testing of materials or semi-finished products, e.g. semiconductor wafers or substrates G01R31/318511 takes precedence; testing during manufacture H01L22/00
• CPC Class Codes: G01R 31/2886 Features relating to contacting the IC under test, e.g. probe heads; chucks G01R31/2865 takes precedence, test connections, e.g. test sockets, or probes per se, G01R1/04 or G01R1/06
• CPC Class Codes: G01R 31/312 by capacitive methods
• CPC Class Codes: H01L 22/14 for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means

Abstract

A needle is pressed into the backside oxide of a semiconductor wafer and a voltage applied to the wafer greater than the breakdown voltage of the oxide in order to make an electrical contact with the bulk material of the wafer. A capacitor plate is provided proximate to a wafer on a chuck and a Kelvin probe is provided proximate to the wafer. A varying voltage is applied between the chuck and the capacitor plate and a voltage is monitored between the Kelvin probe and the chuck. The monitored voltage remaining constant indicates electrical contact between the chuck and the wafer.

Claims

1. A method for making electrical contact between a semiconductor wafer having a dielectric layer and a wafer chuck holding said wafer, said dielectric layer having a breakdown voltage, said method comprising:

urging a pointed contact against said dielectric layer; and

momentarily applying a voltage equal or greater than said breakdown voltage between said contact and said chuck, thereby creating an ohmic connection between said wafer and said chuck.

2. A method according to claim 1, wherein said voltage is applied after said pointed contact contacts said dielectric layer.

3. A method according to claim 1, wherein said voltage is applied to said pointed contact prior to said pointed contact contacting said dielectric layer and reduced thereafter.

4. A method for determining electrical contact between a semiconductor wafer and a wafer chuck, said method comprising:

providing a capacitor plate proximate to said wafer;

providing a Kelvin probe proximate to said wafer;

applying a varying voltage between said chuck and said capacitor plate; and

monitoring a voltage between said Kelvin probe and said chuck, wherein said monitored voltage remaining constant is indicative of electrical contact.

5. A method according to claim 4, wherein said varying voltage is varied over both positive and negative values to indicate if said electrical contact is ohmic.

6. A method for determining electrical contact between a semiconductor wafer and a wafer chuck, said method comprising:

providing a first capacitor plate proximate to said wafer;

providing a second capacitor plate proximate to said wafer;

applying a varying voltage between said chuck and said first capacitor plate; and

monitoring a voltage between said second capacitor plate and said chuck, wherein said monitored voltage remaining constant is indicative of electrical contact.

7. A method according to claim 6, wherein said varying voltage is varied over both positive and negative values to indicate if said electrical contact is ohmic.

8. An apparatus for making electrical contact between a semiconductor wafer having a dielectric layer and a wafer chuck holding said wafer, said dielectric layer having a breakdown voltage, said apparatus comprising:

a pointed contact;

a contact actuator for urging said contact against said dielectric layer; and

a voltage source for momentarily applying a voltage equal or greater than said breakdown voltage between said contact and said chuck, thereby creating an ohmic connection between said wafer and said chuck.

9. An apparatus according to claim 8, wherein said voltage is applied after said pointed contact contacts said dielectric layer.

10. An apparatus according to claim 8, wherein said voltage is applied to said pointed contact prior to said pointed contact contacting said dielectric layer and reduced thereafter.

11. An apparatus for determining electrical contact between a semiconductor wafer and a wafer chuck, said apparatus comprising:

a Kelvin probe proximate to said wafer;

a capacitor plate proximate to said wafer;

a variable voltage source between said chuck and said capacitor plate; and

a voltage monitor between said Kelvin probe and said chuck, wherein a monitored voltage remaining constant is indicative of electrical contact.

12. An apparatus according to claim 11, wherein said variable voltage is varied over both positive and negative values to indicate if said electrical contact is ohmic.

13. An apparatus for determining electrical contact between a semiconductor wafer and a wafer chuck, said apparatus comprising:

a first capacitor plate proximate to said wafer;

a second capacitor plate proximate to said wafer;

a variable voltage source between said chuck and said first capacitor plate; and

a voltage monitor between said second capacitor plate and said chuck, wherein a monitored voltage remaining constant is indicative of electrical contact.

14. An apparatus according to claim 13, wherein said variable voltage is varied over both positive and negative values to indicate if said electrical contact is ohmic.