Semiconductor memory device and method for relieving defective memory cells
First Claim
1. A semiconductor memory device comprising:
- plural memory cell arrays, each memory cell array having plural memory cell groups, each of said memory cell groups being connected via a local bus to a cell array global bus line commonly shared by each of said memory cell groups of each memory cell array;
a redundancy memory cell array with a redundancy cell array global bus line, said redundancy memory cell array having plural redundancy memory cell groups, each of said redundancy memory cell groups being connected via a local bus to said redundancy cell array global bus line,said redundancy memory cell array being shared by at least two memory cell arrays; and
a control circuit connected to said redundancy cell array and said two memory cell arrays for transmitting data for one or more memory cells of said redundancy memory cell groups in place of data for one or more defective memory cells in any of said plural memory cell groups of said two memory cell arrays.
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Accused Products
Abstract
A semiconductor memory device includes a plurality of memory cell groups, the data for the plurality of memory cell groups being transmitted through mutually different buses, and a redundancy memory cell group common to the plurality of memory cell groups. The semiconductor memory device further includes a control circuit for transmitting data for one or more memory cells of the redundancy memory cell group in place of data for one or more defective memory cells in any of the plurality of memory cell groups. Each of the plurality of memory cell groups is provided corresponding to every different input/output terminal of the memory device, or the plurality of memory cell groups are provided corresponding to a common input/output terminal of the memory device.
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Citations
20 Claims
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1. A semiconductor memory device comprising:
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plural memory cell arrays, each memory cell array having plural memory cell groups, each of said memory cell groups being connected via a local bus to a cell array global bus line commonly shared by each of said memory cell groups of each memory cell array; a redundancy memory cell array with a redundancy cell array global bus line, said redundancy memory cell array having plural redundancy memory cell groups, each of said redundancy memory cell groups being connected via a local bus to said redundancy cell array global bus line, said redundancy memory cell array being shared by at least two memory cell arrays; and a control circuit connected to said redundancy cell array and said two memory cell arrays for transmitting data for one or more memory cells of said redundancy memory cell groups in place of data for one or more defective memory cells in any of said plural memory cell groups of said two memory cell arrays. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A semiconductor memory device comprising:
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a bus selecting circuit coupled to a redundancy cell array global bus line, to a first memory cell array global bus line, and to a second memory cell array global bus line; said first memory cell array global bus line being further switchable connected at plural points to a first memory cell array, said first memory cell array having plural memory cell groups, each of said memory cell groups being connected via a local bus to said first memory cell array global bus line; said second memory cell array global bus line being further switchable connected at plural points to a second memory cell array, said second memory cell array having plural memory cell groups, each of said memory cell groups being connected via a local bus to said second memory cell array global bus line; said redundancy memory cell array global bus line being further connected at plural points to a redundancy memory cell array, said redundancy memory cell array having plural redundancy memory cell groups, each of said redundancy memory cell groups being connected via a local bus to said redundancy memory cell array global bus line; said redundancy memory cell array being shared by said first and second memory cell arrays; and said bus selecting circuit cell being controllable for transmitting data for one or more memory cells of said redundancy memory cell groups in place of data for one or more defective memory cells in any of said plural memory cell groups of said first and second memory cell arrays. - View Dependent Claims (10, 11, 12, 13, 14)
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15. A method for relieving defective memory cells in a semiconductor device, comprising the steps of:
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providing a redundancy memory cell array corresponding to a plurality of memory cell arrays, providing each of the plural memory cell arrays with plural memory cell groups connected to a local bus line, the local bus lines of each memory cell groups being switchable connected to a memory cell array global bus line; providing a bus switching control connected to the memory cell array global bus line corresponding to each of the plural memory cell arrays and connected to the redundancy memory cell array via a redundancy memory cell array bus line; and transmitting data for one or more memory cells of said redundancy memory cell array via said redundancy memory cell array bus line in place of data for one or more defective memory cells in any of said plurality of memory cell arrays. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification