Reaction chamber component having improved temperature uniformity
First Claim
1. A temperature controlled component useful in a reaction chamber for processing a semiconductor substrate, comprising:
- a heat sink;
a heated member comprising a showerhead or sputter target support supported by the heat sink; and
a heat transfer member in thermal contact with the heat sink and a localized region of the heated member at which temperature buildup is highest across the heated member.
1 Assignment
0 Petitions
Accused Products
Abstract
A component useful for a plasma reaction chamber includes a heat sink such as a temperature-controlled support member and a heated member such as an electrically powered showerhead electrode. The showerhead electrode is peripherally secured to the support member to enclose a gas distribution chamber between a top surface of the electrode and a bottom surface of the support member. A heat transfer member extends between the electrode and the support member and transfers heat from an area of temperature buildup on the top surface of the showerhead electrode to the bottom surface of the support member in order to control the temperature distribution across the showerhead electrode.
-
Citations
21 Claims
-
1. A temperature controlled component useful in a reaction chamber for processing a semiconductor substrate, comprising:
-
a heat sink; a heated member comprising a showerhead or sputter target support supported by the heat sink; and a heat transfer member in thermal contact with the heat sink and a localized region of the heated member at which temperature buildup is highest across the heated member.
-
-
2. A temperature controlled component useful in a reaction chamber for processing a semiconductor substrate, comprising:
-
a heat sink; a heated member supported by the heat sink; and a heat transfer member in thermal contact with the heat sink and a localized region of the heated member at which temperature buildup is highest across the heated member, the heat sink being a support member having a bottom surface, and the heated member being an electrically powered showerhead electrode peripherally secured to the support member so as to enclose a gas distribution chamber between a top surface of the showerhead electrode and the bottom surface of the support member, and wherein the heat transfer member is in thermal contact with a center region of the top surface of the showerhead electrode and the bottom surface of the support member. - View Dependent Claims (3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
-
-
20. In a component for a plasma chamber wherein process gas passes through a baffle plate into a gas plenum between the baffle plate and a showerhead electrode and then through openings in the showerhead electrode into the plasma chamber, the improvement comprising a heat transfer member providing a heat flow path between a central portion of the showerhead electrode and a cooled support member above the baffle plate.
-
21. A method of processing a semiconductor substrate in a plasma chamber wherein process gas passes through a baffle plate into a gas plenum between the baffle plate and a showerhead electrode and then through openings in the showerhead electrode into the plasma chamber, and a heat transfer member provides a heat flow path between a central portion of the showerhead electrode and a cooled support member above the baffle plate, the method comprising flowing process gas through the showerhead electrode, energizing the process gas into a plasma state by supplying RF power to the showerhead electrode, and contacting an exposed surface of the semiconductor substrate with the plasma.
Specification