Reaction chamber component having improved temperature uniformity

• US 6,123,775 A
• Filed: 06/30/1999
• Issued: 09/26/2000
• Est. Priority Date: 06/30/1999
• Status: Expired due to Term

• Current Assignee: Lam Research Corporation
• Original Assignee: Lam Research Corporation
• Inventors: Hao, Fangli, Pourhashemi, Javad, Dhindsa, Rajinder
• Primary Examiner(s): Bueker, Richard
• Assistant Examiner(s): Pacheco, Liza
• Application Number:
  US09/343,482
• Time in Patent Office: 454 Days
• Field of Search: 156/345, 204/473, 204/408, 204/431, 204/280, 204/298.08, 204/298.09, 118/666, 118/667, 118/723 R, 118/715, 118/724
• US Class Current: 118/724
• CPC Class Codes: C23C 16/45572 Cooled nozzles
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01J 37/32522 Temperature
• CPC Class Codes: H01L 21/67103 mainly by conduction

Abstract

A component useful for a plasma reaction chamber includes a heat sink such as a temperature-controlled support member and a heated member such as an electrically powered showerhead electrode. The showerhead electrode is peripherally secured to the support member to enclose a gas distribution chamber between a top surface of the electrode and a bottom surface of the support member. A heat transfer member extends between the electrode and the support member and transfers heat from an area of temperature buildup on the top surface of the showerhead electrode to the bottom surface of the support member in order to control the temperature distribution across the showerhead electrode.

Claims

1. A temperature controlled component useful in a reaction chamber for processing a semiconductor substrate, comprising:

a heat sink;

a heated member comprising a showerhead or sputter target support supported by the heat sink; and

a heat transfer member in thermal contact with the heat sink and a localized region of the heated member at which temperature buildup is highest across the heated member.

2. A temperature controlled component useful in a reaction chamber for processing a semiconductor substrate, comprising:

a heat sink;

a heated member supported by the heat sink; and

a heat transfer member in thermal contact with the heat sink and a localized region of the heated member at which temperature buildup is highest across the heated member, the heat sink being a support member having a bottom surface, and the heated member being an electrically powered showerhead electrode peripherally secured to the support member so as to enclose a gas distribution chamber between a top surface of the showerhead electrode and the bottom surface of the support member, and wherein the heat transfer member is in thermal contact with a center region of the top surface of the showerhead electrode and the bottom surface of the support member.

3. The component of claim 2, wherein process gas is supplied to the gas distribution chamber through one or more gas supplies.

4. The component of claim 2, wherein the heat transfer member comprises a unitary body of metal.

5. The component of claim 2, wherein the heat transfer member is a cast metal body.

6. The component of claim 2, wherein the heat transfer member is a shaped body of silicon.

7. The component of claim 2, wherein the heat transfer member is a metal composite body.

8. The component of claim 2, wherein the heat transfer member comprises a projection on the top surface of the electrode.

9. The component of claim 2, wherein the heat transfer member comprises a shaped body bonded to the top surface of the electrode with bonding material.

10. The component of claim 9, wherein the bonding material is a metallic material or thermally conductive adhesive.

11. The showerhead electrode assembly of claim 2, wherein the heat transfer member comprises a projection on the bottom surface of the support member.

12. The component of claim 2, wherein the heat transfer member comprises a shaped body bonded to the bottom surface of the support member with bonding material.

13. The component of claim 12, wherein the bonding material is a metallic material or thermally conductive adhesive.

14. The component of claim 2, wherein the heat transfer member comprises concentrically arranged annular rings.

15. The component of claim 14, wherein the rings include gas passages therethrough.

16. The component of claim 2, wherein a coolant passes through channels in the support member.

17. The component of claim 2, further comprising a baffle assembly located between the support member and the showerhead electrode, the baffle assembly including first and second baffle plates.

18. A component of claim 17, wherein the first and second baffle plates include shaped openings having the shape of the heat transfer member and the shaped openings are closely fitted around the heat transfer member.

19. The component of claim 17, wherein the heat transfer member comprises first, second and third shaped bodies, the first body thermally contacting the center region of the top surface of the showerhead electrode and an underside of the first baffle plate, the second body thermally contacting the top of the first baffle plate and an underside of the second baffle plate, and the third body thermally contacting the top of the second baffle plate and the bottom surface of the support member.

20. In a component for a plasma chamber wherein process gas passes through a baffle plate into a gas plenum between the baffle plate and a showerhead electrode and then through openings in the showerhead electrode into the plasma chamber, the improvement comprising a heat transfer member providing a heat flow path between a central portion of the showerhead electrode and a cooled support member above the baffle plate.

21. A method of processing a semiconductor substrate in a plasma chamber wherein process gas passes through a baffle plate into a gas plenum between the baffle plate and a showerhead electrode and then through openings in the showerhead electrode into the plasma chamber, and a heat transfer member provides a heat flow path between a central portion of the showerhead electrode and a cooled support member above the baffle plate, the method comprising flowing process gas through the showerhead electrode, energizing the process gas into a plasma state by supplying RF power to the showerhead electrode, and contacting an exposed surface of the semiconductor substrate with the plasma.