Ceramic composition for an apparatus and method for processing a substrate
First Claim
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1. A plasma reactor for processing substrates comprising a reactor chamber including a chamber wall;
- a dielectric window supported by said chamber wall and comprising a ceramic composition including a ceramic compound and an oxide of a Group IIIB metal said ceramic composition of said dielectric window comprising from about 30% by weight to about 95% by weight of said ceramic compound and from about 5% by weight to about 70% by weight of said oxide of a Group IIIB metal;
a pedestal assembly disposed in said reactor chamber for supporting substrates in said reactor chamber;
a processing power source;
a processing gas-introducing assembly, engaged to said reactor chamber, for introducing a processing gas into said reactor chamber; and
a processing power-transmitting member disposed in proximity to said reactor chamber and connected to said processing power source for transmitting power into the reactor chamber to aid in sustaining a plasma from a processing gas within the reactor chamber.
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Abstract
A ceramic composition of matter for a process kit and a dielectric window of a reactor chamber wherein substrates are processed in a plasma of a processing gas. The ceramic composition of matter contains a ceramic compound (e.g. Al2 O3) and an oxide of a Group IIIB metal (e.g., Y2 O3). A method for processing (e.g. etching) a substrate in a chamber containing a plasma of a processing gas. The method includes passing processing power through a dielectric window which is formed from the ceramic composition of matter.
96 Citations
52 Claims
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1. A plasma reactor for processing substrates comprising a reactor chamber including a chamber wall;
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a dielectric window supported by said chamber wall and comprising a ceramic composition including a ceramic compound and an oxide of a Group IIIB metal said ceramic composition of said dielectric window comprising from about 30% by weight to about 95% by weight of said ceramic compound and from about 5% by weight to about 70% by weight of said oxide of a Group IIIB metal; a pedestal assembly disposed in said reactor chamber for supporting substrates in said reactor chamber; a processing power source; a processing gas-introducing assembly, engaged to said reactor chamber, for introducing a processing gas into said reactor chamber; and a processing power-transmitting member disposed in proximity to said reactor chamber and connected to said processing power source for transmitting power into the reactor chamber to aid in sustaining a plasma from a processing gas within the reactor chamber. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. An inductively coupled RF plasma reactor for processing semiconductor wafers comprising:
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a reactor chamber having a chamber wall and a dome-shaped ceiling supported by said chamber wall, said dome-shaped ceiling comprising a first ceramic composition including a first ceramic compound and a first oxide of a Group IIIB metal, said first ceramic composition of said dome-shaped ceiling comprising from about 30% by weight to about 95% by weight of said, first ceramic compound and from about 5% by weight to about 70% by weight of said first oxide of a Group IIIB metal; a wafer pedestal assembly disposed in said reactor chamber for supporting semiconductor wafers in said reactor chamber; an inductively coupled RF power source; means, engaged to said reactor chamber, for introducing a processing gas into said reactor chamber; a coil inductor disposed adjacent to said reactor chamber and connected to said inductively coupled RF power source; and a bias RF source connected to said wafer pedestal assembly. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37)
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- 38. A process kit for processing semiconductor substrates comprising a first ring member having a first ceramic composition including a first ceramic compound and a first oxide of a Group IIIB metal said first ceramic composition comprises from about 30% by weight to about 95% by weight of said first ceramic compound and from about 5% by weight to about 70% by weight of said first oxide of a Group IIIB metal.
- 46. A dielectric member having a high erosion resistance during processing of a substrate in a high density plasma of a processing gas comprising a ceramic composition including a ceramic compound and an oxide of a Group IIIB metal, said ceramic composition comprises from about 30% by weight to about 95% by weight of said ceramic compound and from about 5% by weight to about 70% by weight of said oxide of a Group IIIB metal.
Specification