Method for making deep sub-micron mosfet structures having improved electrical characteristics

• US 6,124,177 A
• Filed: 08/13/1999
• Issued: 09/26/2000
• Est. Priority Date: 08/13/1999
• Status: Expired due to Term

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Su, Hung Der, Chu, Wen Ting, Chen, Jong, Lin, Chrong Jung
• Primary Examiner(s): Smith, Matthew
• Assistant Examiner(s): KESHAVAN, BELUR V
• Application Number:
  US09/373,635
• Time in Patent Office: 410 Days
• Field of Search: 438/305, 438/182, 438/201, 438/319, 438/421, 438/574, 257/410, 257/522
• US Class Current: 438/305
• CPC Class Codes: H01L 29/1045 the doping structure being parallel to the channel length, e.g. DMOS like
• CPC Class Codes: H01L 29/105 with vertical doping variation H01L29/7827 takes precedence
• CPC Class Codes: H01L 29/42376 characterised by the length or the sectional shape
• CPC Class Codes: H01L 29/4983 with a lateral structure, e.g. a Polysilicon gate with a lateral doping variation or with a lateral composition variation or characterised by the sidewalls being composed of conductive, resistive or dielectric material
• CPC Class Codes: H01L 29/4991 comprising an air gap
• CPC Class Codes: H01L 29/665 using self aligned silicidation, i.e. salicide formation of conductive layers comprising silicides H01L21/28518
• CPC Class Codes: H01L 29/66537 using a self aligned punch through stopper or threshold implant under the gate region H01L29/66606 takes precedence
• CPC Class Codes: H01L 29/66553 using inside spacers, permanent or not
• CPC Class Codes: H01L 29/66583 with initial gate mask or masking layer complementary to the prospective gate location, e.g. with dummy source and drain contacts
• CPC Class Codes: H01L 29/66598 forming drain [D] and lightly doped drain [LDD] simultaneously, e.g. using implantation through the wings a T-shaped layer, or through a specially shaped layer

Abstract

A method for making improved MOSFET structures is achieved. A Si₃ N₄ and a SiO₂ layer are deposited and patterned to have openings for gate electrodes over device areas on a substrate. A second Si₃ N₄ layer is deposited and etched back to form arc-shaped sidewall spacers in the openings. An anti-punchthrough implant and a gate oxide are formed in the openings between the Si₃ N₄ sidewall spacers. A polysilicon layer is deposited and polished back to form gate electrodes. The SiO₂ and the Si₃ N₄ layers, including the sidewall spacers, are removed to form free-standing gate electrodes that increase in width with height, and having arc-shaped sidewalls. An implant through the edges of the arc-shaped gate electrodes results in lightly doped source/drains that are graded both in junction depth and dopant concentration to reduce hot electron effects. A second SiO₂ layer is deposited and etched back to form insulating sidewall spacers that include air spacers to reduce the gate-to-drain capacitance. Another implant is used to form source/drain contact areas. A salicide process is used which forms a silicide on the polysilicon gate electrodes and on the source/drain contact areas. The arc-shaped structure allows MOSFETs to be formed with reduced channel lengths while maintaining a wider silicide area on the gate electrodes for reduced resistance.

Claims

1. A method for fabricating improved MOSFET devices on a semiconductor substrate having device areas comprising the steps of:

depositing a first insulating layer and a second insulating layer and patterning to form openings for FET polysilicon gate electrodes over said device areas;

depositing and etching back a third insulating layer to form arc-shaped first sidewall spacers in said openings;

implanting an anti-punchthrough dopant in said substrate between said first sidewall spacers;

forming a gate oxide on said device areas in said openings;

depositing a polysilicon layer and polishing back to form polysilicon gate electrodes in said openings aligned over said gate oxide;

isotropically etching said second insulating layer, said first insulating layer, and said arc-shaped first sidewall spacers, leaving free-standing said polysilicon gate electrodes having a shape determined by said arc-shaped sidewall spacers, whereby said polysilicon gate electrodes gradually increase in width as a function of increasing height from said gate oxide;

ion implanting a dopant through said polysilicon gate electrodes to form graded, lightly doped source/drain areas adjacent to said gate oxide and concurrently doping said gate electrodes;

depositing and anisotropically etching back a fourth insulating layer to form second sidewall spacers and air spacers adjacent to said gate electrodes;

ion implanting source/drain con tact areas adjacent to said second sidewall spacers and concurrently doping said polysilicon gate electrodes;

depositing and annealing a metal layer to form a metal silicide on said polysilicon gate electrodes and on said source/drain contact areas and removing said metal that is unreacted to complete said MOSFET devices.

2. The method of claim 1, wherein said first insulating layer is silicon nitride deposited by low-pressure chemical vapor deposition to a thickness of between about 400 and 1000 Angstroms.

3. The method of claim 1, wherein said second insulating layer is silicon oxide deposited by low-pressure chemical vapor deposition to a thickness of between about 500 and 800 Angstroms.

4. The method of claim 1, wherein said third insulating layer is silicon nitride deposited by low-pressure pressure chemical vapor deposition to a thickness of between about 700 and 900 Angstroms.

5. The method of claim 1, wherein said anti-punchthrough dopant for N-channel FET is a P type dopant, and is implanted at a dose of between about 1.0 E 12 and 7.0 E 13 atoms/cm² and at an implant energy of between about 25 and 60 KeV.

6. The method of claim 1, wherein said second insulating layer is isotropically etched using hydrofluoric acid.

7. The method of claim 1, wherein said first and third insulating layers are removed using a hot phosphoric acid etch.

8. The method of claim 1, wherein said polysilicon layer is deposited by low-pressure chemical vapor deposition using silane as the reactant gas.

9. The method of claim 1, wherein said lightly doped source/drain areas are doped with an N type dopant at a dose of between about 1.0 E 14 and 8.0 E 14 atoms/cm² and at an implant energy of between about 30 and 60 KeV.

10. The method of claim 1, wherein said fourth insulating layer is silicon oxide deposited by low-pressure chemical vapor deposition to a thickness of between about 1400 and 3200 Angstroms.

11. The method of claim 1, wherein said metal is titanium deposited to a thickness of between about 215 and 275 Angstroms.

12. The method of claim 1, wherein said punchthrough implant is an N type dopant, and said lightly doped source/drain areas and said source/drain contact areas are implanted with a P type dopant, and said MOSFET devices are P-channel FETs.

13. A method for fabricating improved MOSFET devices on a semiconductor substrate having device areas comprising the steps of:

depositing a first insulating layer composed of silicon nitride and a second insulating layer composed of silicon oxide, and patterning to form openings for FET gate electrodes over said device areas;

depositing and etching back a third insulating layer composed of silicon nitride to form arc-shaped first sidewall spacers in said openings;

implanting an anti-punchthrough dopant in said substrate between said first sidewall spacers;

forming a gate oxide on said device areas in said openings;

depositing a polysilicon layer and polishing back to form gate electrodes in said openings aligned over said gate oxide;

isotropically etching said second insulating layer, said first insulating layer, and said arc-shaped first sidewall spacers, leaving free-standing said polysilicon gate electrodes having a shape determined by said arc-shaped sidewall spacers, whereby said polysilicon gate electrodes gradually increase in width as a function of increasing height from said gate oxide;

ion implanting a dopant through said gate electrodes to form graded, lightly doped source/drain areas adjacent to said gate oxide and concurrently doping said gate electrodes;

depositing and anisotropically etching back a fourth insulating layer to form second sidewall spacers and air spacers adjacent to said gate electrodes;

ion implanting source/drain contact areas adjacent to said second sidewall spacers and concurrently doping said gate electrodes;

depositing and annealing a titanium metal layer to form a metal silicide on said polysilicon gate electrodes and on said source/drain contact areas and removing said metal that is unreacted to complete said MOSFET devices.

14. The method of claim 13, wherein said first insulating layer is deposited by low-pressure chemical vapor deposition to a thickness of between about 400 and 1000 Angstroms.

15. The method of claim 13, wherein said second insulating layer is deposited by low-pressure chemical vapor deposition to a thickness of between about 500 and 800 Angstroms.

16. The method of claim 13, wherein said third insulating layer is deposited by low-pressure chemical vapor deposition to a thickness of between about 700 and 900 Angstroms.

17. The method of claim 13, wherein said anti-punchthrough dopant for N-channel FET is a P type dopant, and is implanted at a dose of between about 1.0 E 12 and 7.0 E 13 atoms/cm² and at an implant energy of between about 25 and 60 KeV.

18. The method of claim 13, wherein said second insulating layer is isotropically etched using hydrofluoric acid.

19. The method of claim 13, wherein said first and third insulating layers are removed using a hot phosphoric acid etch.

20. The method of claim 13, wherein said polysilicon layer is deposited by low-pressure chemical vapor deposition using silane as the reactant gas.

21. The method of claim 13, wherein said lightly doped source/drain areas are doped with an N type dopant at a dose of between about 1.0 E 14 and 8.0 E 14 atoms/cm² and at an implant energy of between about 30 and 60 KeV.

22. The method of claim 13, wherein said fourth insulating layer is silicon oxide deposited by low-pressure chemical vapor deposition to a thickness of between about 1400 and 3200 Angstroms.

23. The method of claim 13, wherein said titanium metal is deposited to a thickness of between about 215 and 275 Angstroms.

24. The method of claim 13, wherein said punchthrough implant is an N type dopant, and said lightly doped source/drain areas and said source/drain contact areas are implanted with a P type dopant, and said MOSFET devices are P-channel FETs.

25. An improved MOSFET device over device areas on a semiconductor substrate comprised of:

polysilicon gate electrodes aligned over a gate oxide and an anti-punchthrough doped region in said substrate aligned under said gate oxide;

said gate electrodes having arc-shaped sidewalls that increase outward with increasing height from said gate oxide and said arc-shaped sidewalls extending over lightly doped source/drain areas;

lightly doped source and drains having increasing dopant concentration and increasing junction depth graded to extend away from edge of said gate oxide;

insulating sidewall spacers extending vertically downward from top edge of said gate electrodes to said substrate that form air spacers between said insulating sidewall spacers and said arc-shaped sidewalls of said polysilicon gate electrodes;

source/drain contacts in said substrate adjacent to outer portions of said insulating sidewall spacers;

a metal silicide on top surface of said gate electrodes and on said source/drain contacts.

26. The structure of claim 25, wherein said polysilicon gate electrodes are doped with an N type dopant during implantation of said source/drain areas.

27. The structure of claim 25, wherein said lightly doped source/drain areas are doped with an N type dopant by ion implanting through said arc-shaped sidewalls of said gate electrodes.

28. The structure of claim 25, wherein said metal silicide is titanium silicide.