Magnetic sensor using tunnel resistance to detect an external magnetic field

• US 6,124,711 A
• Filed: 01/17/1997
• Issued: 09/26/2000
• Est. Priority Date: 01/19/1996
• Status: Expired due to Term

• Current Assignee: Fujitsu Limited
• Original Assignee: Fujitsu Limited
• Inventors: Tanaka, Atsushi, Sato, Masashige
• Primary Examiner(s): Snow, Walter E.
• Application Number:
  US08/785,223
• Time in Patent Office: 1,348 Days
• Field of Search: 324/252, 324/307.21, 338/32 R, 257/414, 257/421, 257/422, 428/611, 428/615, 428/617, 428/622, 428/623
• US Class Current: 324/252
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 25/00 Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• CPC Class Codes: G11B 2005/3996 large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
• CPC Class Codes: G11B 5/3903 using magnetic thin film layers or their effects, the films being part of integrated structures
• CPC Class Codes: G11B 5/3909 Arrangements using a magnetic tunnel junction
• CPC Class Codes: H10N 50/10 Magnetoresistive devices
• CPC Class Codes: Y10T 428/12465 having magnetic properties, or preformed fiber orientation coordinate with shape

Abstract

A magnetic sensor including a first magnetic layer having an axis of easy magnetization in a first direction; a second magnetic layer having an axis of easy magnetization in a second direction different from the first direction; a third magnetic layer positioned between the first magnetic layer and the second magnetic layer, and having a smaller coercive force than the first magnetic layer and the second magnetic layer; a first insulating layer interposed between the first magnetic layer and the third magnetic layer; and a second insulating layer interposed between the second magnetic layer and the third magnetic layer. An external magnetic field is detected by the use of tunnel resistance between the first magnetic layer and the third magnetic layer and tunnel resistance between the second magnetic layer and the third magnetic layer.

Claims

1. A magnetic sensor comprising:

a first magnetic layer having an axis of easy magnetization in a first direction;

a second magnetic layer having an axis of easy magnetization in a second direction different from the first direction;

a third magnetic layer positioned between the first magnetic layer and the second magnetic layer, and having a smaller coercive force than the first magnetic layer and the second magnetic layer;

a first insulating layer interposed between the first magnetic layer and third magnetic layer; and

a second insulating layer interposed between the second magnetic layer and the third magnetic layer;

wherein an external magnetic field is detected by the use of tunnel resistance between the first magnetic layer and the third magnetic layer and tunnel resistance between the second magnetic layer and the third magnetic layer.

2. A magnetic sensor according to claim 1, wherein the first direction and the second direction are substantially opposite each other.

3. A magnetic sensor according to claim 2, wherein an axis of easy magnetization of the third magnetic layer is substantially normal to the first direction and the second direction.

4. A magnetic sensor according to claim 1, wherein an antiferromagnetic layer for pinning the axis of easy magnetization is included in at least one of the first magnetic layer and the second magnetic layer.

5. A magnetic sensor according to claim 1, wherein a coercive force is of the first magnetic layer and the second magnetic layer is larger than a saturation magnetic field in an axis of difficult magnetization of the third magnetic layer.

6. A magnetic sensor according to claim 1, wherein a static magnetic field due to the first magnetic layer and a static magnetic field due to the second magnetic layer compensates one another in the third magnetic layer.