Plasma reactor with enhanced plasma uniformity by gas addition, reduced chamber diameter and reduced RF wafer pedestal diameter

• US 6,125,788 A
• Filed: 12/12/1997
• Issued: 10/03/2000
• Est. Priority Date: 07/18/1994
• Status: Expired due to Fees

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Su, Yuh-Jia, Hills, Graham W.
• Primary Examiner(s): Ahmad, Nasser
• Application Number:
  US08/989,282
• Time in Patent Office: 1,026 Days
• Field of Search: 118/723 R, 118/723 MP, 118/723 E, 156/345 P, 156/345 PH, 156/345 PW, 156/345 PC
• US Class Current: 156/345.51
• CPC Class Codes: H01J 37/32082 Radio frequency generated discharge H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01J 37/32449 Gas control, e.g. control of the gas flow
• CPC Class Codes: H01J 37/32532 Electrodes
• CPC Class Codes: H01J 37/32642 Focus rings
• CPC Class Codes: H01L 21/3065 Plasma etching; Reactive-ion etching
• CPC Class Codes: Y10S 156/915 Differential etching apparatus including focus ring surrounding a wafer for plasma apparatus
• CPC Class Codes: Y10S 438/941 Loading effect mitigation

Abstract

The invention improves etch uniformity across a silcon wafer surface in an RF plasma etch reactor. In a first aspect of the invention, etch uniformity is enhanced by reducing the etchant species (e.g., Chlorine) ion and radical densities near the wafer edge periphery without a concomitant reduction over the wafer center, by diluting the etchant (Chlorine) with a diluent gas which practically does not etch Silicon (e.g., Hydrogen Bromide) near the wafer edge periphery. In a second aspect of the invention, etch rate uniformity is enhanced by more rapidly disassociating Chlorine molecules over the center of the wafer to increase the local etch rate, without a concomitant hastening of Chlorine dissociation near the wafer periphery, by the introduction of an inert gas over the wafer center. In a third aspect of the invention, etch rate uniformity is enhanced by forcing gas flow from the gas distribution plate downward toward the wafer center to provide a greater concentration of Chlorine ions over the wafer center, by reducing the effective diameter of the chamber between the gas distribution plate and the wafer to approximately the diameter of the wafer. In a fourth aspect of the invention, etch rate uniformity is enhanced by reducing RF power near the wafer edge periphery, by reducing the RF pedestal to a diameter substantially less than that of the wafer.

Claims

1. An RF plasma etch reactor for etching a semiconductor wafer having an edge periphery, said reactor comprising:

a vacuum chamber including a chamber wall and ceiling;

a vacuum pump coupled to said chamber for maintaining said chamber at a predetermined operating pressure;

an etchant source inlet of a gas comprising an etchant gas for providing in a plasma species capable of etching a material on a surface of said semiconductor wafer;

a gas distribution plate in the interior of said chamber connected to said etchant source inlet to distribute said etchant gas into said vacuum chamber;

a pedestal for holding said wafer inside said vacuum chamber, said pedestal characterising a conductive inner portion having a radius less than that of said wafer and extending from a center portion of said wafer radially outward up to said radius whereby an outer portion of said wafer including an edge periphery thereof does not overlie said pedestal, said pedestal characterized by conductive material;

an RF power source coupled to said pedestal for coupling RF power into the interior of said vacuum chamber to maintain a plasma therein characterized by ions of said etchant gas;

an insulating ring surrounding said pedestal and underlying said outer portion of said wafer; and

an insulating layer underlying said wafer and overlying said pedestal and said insulating ring whereby to seal an interface therebetween.

2. The reactor of claim 1 further characterises an electrostatic chuck conductive layer enveloped within said insulating layer, and means for applying an electrostatic potential to said electrostatic chuck conductive layer.

3. The reactor of claim 2 further characterises coolant gas flow channels in a top surface of said insulating layer and means for furnishing a coolant gas in said channels to remove heat from said wafer.

4. In an RF plasma etch reactor for use with an RF power source to etch a substrate, said reactor being capable of being evacuated to a subatmospheric pressure and of being supplied with etchant gas, a substrate pedestal assembly comprising:

a conductive cathode within the reactor upon which a substrate within the reactor may be supported, said cathode having a radius less than that of said substrate, said cathode being capable of being coupled to an RF power source to input RF power into the interior of said reactor to sustain a plasma including ions of etchant gas;

an insulating structure surrounding said cathode, including an insulating ring portion surrounding said cathode and an insulating layer portion over said insulating ring and cathode and isolating the cathode and insulating ring from an overlying substrate, the outer diameter of the ring being greater than that of the substrate, whereby the RF power applied to the wafer is reduced in the vicinity of the substrate to reduce the density of ions of etchant gas in the vicinity of said periphery relative to the central portion of the substrate.

5. The pedestal assembly of claim 4 further comprising;

a conductive layer enveloped within said insulating layer, and

an electrical connection to said conductive layer to permit an electrical potential to be applied to said conductive layer, causing an electrostatic attraction between the pedestal assembly and the substrate.

6. The pedestal of claim 4 further comprising coolant gas flow channels in a top surface of said insulating layer portion, said coolant gas flow channels being capable of being connected to a coolant gas source.

7. A pedestal for supporting a workpiece in a plasma reactor comprising:

a conductive cathode upon which a substrate may be supported, said cathode having a radius less than that of said substrate, said cathode being capable of being coupled to an RF power source to input RF power into the interior of said reactor to sustain a plasma including ions of etchant gas;

an insulating structure surrounding said cathode, including an insulating ring portion surrounding said cathode and an insulating layer portion over said insulating ring and cathode and isolating the cathode and insulating ring from an overlying substrate, the outer diameter of the ring being greater than that of the substrate, whereby the RF power applied to the wafer is reduced in the vicinity of the substrate to reduce the density of ions of etchant gas in the vicinity of said periphery relative to the central portion of the substrate.

8. The pedestal of claim 7 further comprising:

a conductive layer enveloped within said insulating layer, and

an electrical connection to said conductive layer to permit an electrical potential to be applied to said conductive layer, causing an electrostatic attraction between the pedestal and the substrate.

9. The pedestal of claim 7 further comprising coolant gas flow channels in a top surface of said insulating layer portion, said coolant gas flow channels being capable of being connected to a coolant gas source.