Method for treating semiconductor wafers with corona charge and devices using corona charging
First Claim
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1. A method of treating a semiconductor wafer to provide a semiconductor wafer resistant to particle depositions, the method comprising the steps of:
- (a) providing the semiconductor wafer having a surface with a surface charge potential;
(b) positioning the semiconductor wafer so that the surface is disposed adjacent a corona charging source;
(c) depositing a substantially uniform corona charge over the surface of the semiconductor wafer to modify the surface charge potential of the semiconductor wafer to define the semiconductor wafer adapted to resist particle depositions; and
(d) disposing the semiconductor wafer in an apparatus for storage or fabrication of the semiconductor wafer wherein the surface charge potential of the semiconductor wafer repels particles during the storage or fabrication, thereby reducing the need for chemical applications to cleanse the semiconductor wafer.
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Abstract
A method of treating the surface of a semiconductor wafer is disclosed for making the wafer resistant to particle adhesion, the method involving the application of a uniform corona charge to the wafer surface. The corona charge is deposited on the wafer using commercially available tools, and if necessary, it may be later removed by immersing the wafer in deionized water or by depositing a compensating corona charge over the wafer of opposite polarity relative to the originally-applied charge.
34 Citations
11 Claims
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1. A method of treating a semiconductor wafer to provide a semiconductor wafer resistant to particle depositions, the method comprising the steps of:
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(a) providing the semiconductor wafer having a surface with a surface charge potential; (b) positioning the semiconductor wafer so that the surface is disposed adjacent a corona charging source; (c) depositing a substantially uniform corona charge over the surface of the semiconductor wafer to modify the surface charge potential of the semiconductor wafer to define the semiconductor wafer adapted to resist particle depositions; and (d) disposing the semiconductor wafer in an apparatus for storage or fabrication of the semiconductor wafer wherein the surface charge potential of the semiconductor wafer repels particles during the storage or fabrication, thereby reducing the need for chemical applications to cleanse the semiconductor wafer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method for providing a semiconductor wafer resistant to the deposition of particles and having an improved stability, the method comprising the steps of:
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(a) providing the semiconductor wafer having a surface with a surface charge potential; (b) positioning the semiconductor wafer adjacent a corona charging source; (c) depositing a substantially uniform corona charge over the surface of the semiconductor wafer to modify the surface charge potential of the semiconductor wafer; and (d) storing or fabricating the semiconductor wafer wherein the semiconductor wafer repels particles during such storage or fabrication to provide the semiconductor wafer having the improved stability without use of irradiation, wafer scrubbing, or chemical cleansing processes.
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11. A method for pre-treating a semiconductor wafer to provide a semiconductor wafer resistant to the deposition of particles, the method consisting essentially of the steps of:
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(a) providing the semiconductor wafer having a surface adapted for use in fabricating active components of a semiconductor device; (b) positioning the semiconductor wafer adjacent a corona charging source; and (c) depositing a substantially uniform corona charge over the surface of the semiconductor wafer to modify the surface charge potential of the semiconductor wafer and provide the semiconductor wafer resistant to the deposition of particles, wherein the time and voltage of the corona charge results in an electrical field that is less than the electrical breakdown field of the material comprising the surface of the semiconductor wafer, whereby the active components of the semiconductor device may be deposited on the surface of the semiconductor wafer without use of irradiation, wafer scrubbing, or chemical cleansing processes.
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Specification