Semiconductor device having high aspect ratio contacts
First Claim
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1. A semiconductor device, comprising:
- a substrate having a contact hole formed therein;
a conductive layer comprising a conductive material, the conductive layer including a first portion extending into and substantially filling the contact hole and a second portion having an exterior surface disposed exterior to the contact hole; and
an impurity layer disposed in the conductive layers, the impurity layer comprising an impurity that migrates toward the exterior surface at a temperature that is less than a melting point temperature of the conductive material such that the first portion of the conductive layer is substantially free of the impurity.
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Abstract
Impurities are added to a conductor layer in a semiconductor process to prevent formation of void spaces and encourage complete filling of contacts. The impurities reduce the melting point and surface tension of a conductor layer, thereby improving filling characteristics during a reflow step. The impurities may be added at any time during the process, including during conductor deposition and/or reflow.
20 Citations
21 Claims
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1. A semiconductor device, comprising:
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a substrate having a contact hole formed therein; a conductive layer comprising a conductive material, the conductive layer including a first portion extending into and substantially filling the contact hole and a second portion having an exterior surface disposed exterior to the contact hole; and an impurity layer disposed in the conductive layers, the impurity layer comprising an impurity that migrates toward the exterior surface at a temperature that is less than a melting point temperature of the conductive material such that the first portion of the conductive layer is substantially free of the impurity. - View Dependent Claims (2, 3, 4, 5, 6, 7, 21)
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8. A semiconductor device, comprising:
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a substrate having a contact hole formed therein; a conductor layer comprising a conductive material, the conductor layer extending into said contact hole; a first impurity layer in said conductor layer, the first impurity layer comprising the conductive material and a first impurity, the first impurity layer having a melting point temperature and surface tension less than that of said conductive material; and a second impurity layer in said conductor layer, the second impurity layer comprising the conductive material and a second impurity, the second impurity layer having a melting point temperature and surface tension less than that of said conductive material, the second impurity layer being separated from the first impurity layer by a portion of the conductive material that is substantially free of an impurity. - View Dependent Claims (9, 10, 11)
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12. A semiconductor device, comprising:
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a semiconductor substrate having a first layer having a contact hole formed therein; a layer of conductive material disposed in the contact hole; an impurity layer disposed in the contact hole over the layer of conductive material, the impurity layer having a melting point temperature and surface tension less than that of the conductive material, the impurity layer migrating out of the contact hole and the layer of conductive material filling the contact hole in response to the layer of conductive material and the impurity layer being reflowed. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20)
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Specification