Element and apparatus for attenuated total reflection measurement, and method for measuring specific component using the same

• US 6,128,091 A
• Filed: 08/25/1998
• Issued: 10/03/2000
• Est. Priority Date: 08/26/1997
• Status: Expired due to Term

• Current Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Original Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Inventors: Uchida, Shinji, Atsuta, Hiroshi
• Primary Examiner(s): Evans, F. L.
• Application Number:
  US09/139,652
• Time in Patent Office: 770 Days
• Field of Search: 250/339.07, 250/339.11, 356/300, 356/432
• US Class Current: 356/432
• CPC Class Codes: G01N 21/0303 Optical path conditioning in cuvettes, e.g. windows; adapted optical elements or systems; path modifying or adjustment G01N21/031 - G01N21/15 take precedence
• CPC Class Codes: G01N 21/253 for batch operation, i.e. multisample apparatus analytical automats G01N35/00
• CPC Class Codes: G01N 21/552 Attenuated total reflection

Abstract

An improved attenuated total reflection (ATR) element and the measurement apparatus employing the element capable of performing a measurement with a high accuracy at a low operating cost is disclosed. An ATR element of the present invention permits an incident beam to have an internal total reflection at the surface, and comprises a projection protruded at the portion where the incident beam has the internal total reflection.

Claims

1. An attenuated total reflection element which permits an incident beam to enter therein and to have an internal total reflection at the surface, comprising a projection protruded at the portion where said incident beam has said internal total reflection, and said projection having a height of 1 μ

m to 200 μ

m.

2. The attenuated total reflection element in accordance with claim 1, which is made of a single crystal of silicon.

3. The attenuated total reflection element in accordance with claim 1, wherein said projection has a trapezoidal or triangular cross-sectional profile.

4. The attenuated total reflection element in accordance with claim 3, which is formed by anisotropically etching a single crystal of silicon.

5. The attenuated total reflection element in accordance with claim 1, wherein said projection is provided on one of two confronting surfaces, and the beam is made incident upon and issued from the other.

6. The attenuated total reflection element in accordance with claim 5, further comprising a lens for collecting and projecting said incident beam towards said projection on the surface on which the beam is made incident.

7. The attenuated total reflection measurement element in accordance with claim 1, wherein the surface on which said projection is provided is curved.

8. An attenuated total reflection measurement apparatus comprising:

a light source;

a transparent attenuated total reflection element which permits a beam projected by said light source to enter therein and to have an internal total reflection at the surface; and

a light detector which detects the beam issued from said attenuated total reflection element, wherein said attenuated total reflection element has a projection protruded at the portion where said beam has said internal total reflection, and said projection having a height of 1 μ

m to 200 μ

m.

9. The attenuated total reflection measurement apparatus in accordance with claim 8, wherein said projection has a trapezoidal or triangular cross-sectional profile.

10. The attenuated total reflection measurement apparatus in accordance with claim 8, wherein said attenuated total reflection element is made of a single crystal of silicon.

11. The attenuated total reflection measurement apparatus in accordance with claim 10, wherein said attenuated total reflection element is formed by anisotropically etching a single crystal of silicon.

12. The attenuated total reflection measurement apparatus in accordance with claim 8, wherein the surface of said attenuated total reflection element on which said projection is provided is curved.

13. The attenuated total reflection measurement apparatus in accordance with claim 8, wherein said projection is provided on one of two confronting surfaces, and the beam is made incident upon and issued from the other.

14. The attenuated total reflection measurement apparatus in accordance with claim 13, wherein said attenuated total reflection element comprises a lens on said surface on which said beam incidents, for collecting and projecting said beam towards said projection.

15. A method for measuring a specific component comprising the steps of:

permitting a transparent attenuated total reflection element having projections to be in contact with a subject, said projecting having a height of 1 μ

m to 200 μ

m;

projecting a beam to said transparent attenuated total reflection element so as to enter therein and to have an internal total reflection at said projections; and

detecting the beam issued from said attenuated total reflection element after said internal total reflection.