Method and apparatus for enhancing the performance of semiconductor memory devices
First Claim
1. A method of operating a memory circuit comprising the steps of:
- activating a word line of the memory circuit by propagating a first signal along the word line, the first signal having a propagation time period associated with propagating the word line; and
sequentially activating a plurality of sense amplifiers connected to digit lines of the memory circuit within the propagation time period of the first signal.
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Abstract
A method and apparatus for reducing a peak current produced by the simultaneous activation of numerous sense amplifiers associated with an active word line, without reducing the speed of operation of the semiconductor memory device. A memory array includes word lines accessing memory cells and a tracking word line for sequentially activating the sense amplifiers connected to the digit lines by introducing a delay after the activation of each sense amplifier or group of sense amplifiers and before activating the next sense amplifier or group of sense amplifiers, so that the total time for activation of the sense amplifiers for all digit lines associated with an active word line is spread out, but is not longer than the time necessary for activation of an entire word line.
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Citations
22 Claims
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1. A method of operating a memory circuit comprising the steps of:
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activating a word line of the memory circuit by propagating a first signal along the word line, the first signal having a propagation time period associated with propagating the word line; and sequentially activating a plurality of sense amplifiers connected to digit lines of the memory circuit within the propagation time period of the first signal. - View Dependent Claims (2, 5, 6)
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- 3. The method of clam 1 further comprising the step of grouping the digit lines into blocks of digit lines, wherein each block comprises at least two digit lines.
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7. A method of operating a memory circuit comprising the step of:
sequentially activating a plurality of sense amplifiers connected to a plurality of digit lines of the memory circuit, wherein the sense amplifiers are activated within a time period defined by a propagation time of an activation signal propagating along an activated word line of the memory circuit. - View Dependent Claims (8, 9, 10, 11, 12, 13)
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14. A method of operating a memory circuit comprising the steps of:
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propagating an activation signal along a word line of the memory circuit to activate the word line, the activation signal having a propagation time period associated with propagating the word line; and sequentially activating a plurality of sense amplifiers connected to digit lines of the memory circuit prior to an expiration of the propagation time period of the activation signal. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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21. A method of operating a memory circuit comprising the steps of:
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providing a peak current reduction circuit coupled to a row decoder and digit lines of the memory circuit; activating a word line coupled to the row decoder in the memory circuit by propagating an activation signal along the word line, the activation signal having a propagation time period associated with propagating the word line; activating a dummy word line in the peak current reduction circuit by propagating a tracking signal along the dummy word line, the tracking signal corresponding to and tracking the propagation of the activation signal; and sequentially activating a plurality of sense amplifiers connected to digit lines of the memory circuit in accordance with the tracking signal, wherein a duration of the sequential activation does not exceed the activation signal propagation time period. - View Dependent Claims (22)
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Specification