Micro-electro-mechanics systems (MEMS)

• US 6,128,961 A
• Filed: 06/24/1998
• Issued: 10/10/2000
• Est. Priority Date: 12/24/1995
• Status: Expired due to Fees

• Current Assignee: Galayor, Inc.
• Original Assignee: Dan Haronian
• Inventors: Haronian, Dan
• Primary Examiner(s): NOORI, MAX H
• Application Number:
  US09/101,014
• Time in Patent Office: 839 Days
• Field of Search: 73/763, 73/768, 73/774, 73/777, 73/780, 73/718, 73/721
• US Class Current: 73/774
• CPC Class Codes: B81B 2201/0292 Sensors not provided for in B81B2201/0207 - B81B2201/0285
• CPC Class Codes: B81C 1/00246 Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
• CPC Class Codes: B81C 2203/0742 Interleave, i.e. simultaneously forming the micromechanical structure and the CMOS circuit
• CPC Class Codes: G01L 1/18 using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
• CPC Class Codes: G01L 9/0098 using semiconductor body comprising at least one PN junction as detecting element
• CPC Class Codes: G01P 15/124 by semiconductor devices comprising at least one PN junction, e.g. transistors

Abstract

A microelectronics deformation sensor including at least one stress sensor directly integrated on at least one of an extremity of a supported deformable structure and a support of the deformable structure, the deformable structure being constructed of a single crystal material, the at least one stress sensor sensing a stress in a vicinity of the extremity and thereby sensing a deformation of the deformable structure.

Claims

1. A microelectronics deformation sensor comprising:

at least one stress sensor directly integrated on an extremity of a support of a deformable structure, said deformable structure being constructed of a single crystal material and having a reference plane, said deformable structure deforming in-plane relative to said reference plane, said at least one stress sensor sensing a stress in a vicinity of said extremity of said support and thereby quantitatively detecting a deformation of said deformable structure.

2. A deformation sensor according to claim 1 wherein said at least one stress sensor is located substantially symmetrically about a symmetry axis of said deformable structure.

3. A deformation sensor according to claim 1 wherein said at least one stress sensor is located asymmetrically with respect to a symmetry axis of said deformable structure.

4. A deformation sensor according to claim 1 wherein said at least one stress sensor is evaporated on at least one of said deformable structure and said support of said deformable structure.

5. A deformation sensor according to claim 1 wherein said at least one stress sensor is grown on said support of said deformable structure.

7. A deformation sensor according to claim 1 wherein said deformable structure comprises at least one fixed-fixed beam.

8. A deformation sensor according to claim 1 wherein said deformable structure comprises fixed-fixed beams of substantially equal lengths.

9. A deformation sensor according to claim 1 wherein said deformable structure comprises fixed-fixed beams of different lengths.

10. A deformation sensor according to claim 7 wherein said at least one beam is under axial tensile stress.

11. A deformation sensor according to claim 7 wherein said at least one beam has a mechanical behavior of a string.

12. A deformation sensor according to claim 7 wherein said at least one beam has a mechanical behavior of a string-beam system.

13. A deformation sensor according to claim 7 wherein said at least one beam is under axial compressive stress.

16. A deformation sensor according to claim 1 wherein said deformable structure deforms in a torsional manner.

17. A deformation sensor according to claim 1 wherein said deformable structure comprises at least one fixed-free beam.

18. A deformation sensor according to claim 1 wherein said deformable structure comprises fixed-free beams of substantially equal lengths.

19. A deformation sensor according to claim 1 wherein said deformable structure comprises fixed-free beams of different lengths.

20. A deformation sensor according to claim 1 wherein said at least one stress sensor comprises a Schottky diode.

21. A deformation sensor according to claim 1 wherein said at least one stress sensor comprises a pn junction diode.

22. A deformation sensor according to claim 1 wherein said at least one stress sensor comprises a tunnel junction diode.

23. A deformation sensor according to claim 1 wherein said at least one stress sensor comprises a bipolar transistor.

24. A deformation sensor according to claim 1 wherein said at least one stress sensor comprises a Field Effect Transistor (FET).

25. A deformation sensor according to claim 1 wherein said at least one stress sensor comprises a Metal-Oxide-Semiconductor (MOS)-FET.

26. A deformation sensor according to claim 1 wherein said single crystal material is selected from the group consisting of silicon and gallium arsenide.

6. A microelectronics deformation sensor comprising:

at least one stress sensor directly integrated on an extremity of a support of a deformable structure said deformable structure being constructed of a polysilicon and having a reference plane, said deformable structure deforming in-plane relative to said reference plane, said at least one stress sensor sensing a stress in a vicinity of said extremity of said support and thereby quantitatively detecting a de formation of said deformable structure.

14. A method for sensing deformation of a microelectromechanic systems (MEMS), comprising the steps of:

directly integrating at least one stress sensor on an extremity of a support of a deformable structure of said MEMS, said deformable structure being constructed of a single crystal material and having a reference plane, said deformable structure deforming in-plane relative to said reference plane; and

sensing a stress in a vicinity of said extremity of said support with said at least one stress sensor, thereby quantitatively detecting a deformation of said deformable structure.

27. A method according to claim 14 wherein said deformation is due to at least one of an acoustical vibration, a mechanical vibration, a pressure, a temperature change, an acceleration, an electrostatic field and a magnetic field.

15. A method for sensing deformation of a microelectromechanic systems (MEMS), comprising the steps of:

directly integrating at least one stress sensor on an extremity of a support of a deformable structure of said MEMS, said deformable structure being constructed of a polysilicon and having a reference plane, said deformable structure deforming in-plane relative to said reference plane; and

sensing a stress in a vicinity of said extremity of said support with said at least one stress sensor, thereby quantitatively detecting a deformation of said deformable structure.