Apparatus for substrate processing with improved throughput and yield
First Claim
1. A substrate processing apparatus comprising:
- a processing chamber having a chamber body;
a gas delivery system configured to deliver a gas to said processing chamber;
a heater pedestal having a surface for supporting a substrate within said chamber;
a heat exchange system including a passage in said chamber body through which a heat exchange medium may be circulated;
a controller configured to control said gas delivery system, said heat exchange system, and said heater pedestal; and
a memory, coupled to said controller, comprising a computer-readable medium having a computer-readable program embodied therein for directing operation of said substrate processing apparatus, said computer-readable program including;
(a) computer instructions for controlling said heat exchange system to circulate said heat exchange medium through said passage to maintain a heat exchange temperature of about 60°
C. or less;
(b) computer instructions for heating said heater pedestal to a heater temperature; and
(c) computer instructions for controlling said gas delivery system to flow said gas at a flow rate to deposit a film on said substrate, said flow rate providing an effective temperature of said substrate lower than said heater temperature, wherein said film meets uniformity and resistance specifications after deposition onto a number of substrates, said number being less than twenty-five.
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Abstract
The present invention provides an approach which provides an increase in the number of usable substrates with a film, such as titanium nitride, deposited thereon at a sufficient deposition rate and where the film meets uniformity and resistivity specifications as well as providing good step coverage. In accordance with an embodiment, the present invention provides an apparatus for substrate processing. The apparatus circulates a heat exchange medium through a passage in a chamber body of a vacuum chamber, and heats a heater pedestal having a surface for supporting the substrate to a heater temperature. The heat exchange medium has a heat exchange temperature of about 60° C. or less. The the apparatus also flows a gas into the chamber at a flow rate to deposit a film on a substrate, where the flow rate provides an effective temperature of the substrate lower than the heater temperature and where the film meets uniformity and resistance specifications after deposition onto a number of substrates. This number is less than twenty-five, in some embodiments, and less than ten in other embodiments. The use of the present invention thus avoids the discarding of the initial hundreds of processed substrates not meeting specifications that is typically experienced with the prior art processes.
439 Citations
21 Claims
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1. A substrate processing apparatus comprising:
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a processing chamber having a chamber body; a gas delivery system configured to deliver a gas to said processing chamber; a heater pedestal having a surface for supporting a substrate within said chamber; a heat exchange system including a passage in said chamber body through which a heat exchange medium may be circulated; a controller configured to control said gas delivery system, said heat exchange system, and said heater pedestal; and a memory, coupled to said controller, comprising a computer-readable medium having a computer-readable program embodied therein for directing operation of said substrate processing apparatus, said computer-readable program including; (a) computer instructions for controlling said heat exchange system to circulate said heat exchange medium through said passage to maintain a heat exchange temperature of about 60°
C. or less;(b) computer instructions for heating said heater pedestal to a heater temperature; and (c) computer instructions for controlling said gas delivery system to flow said gas at a flow rate to deposit a film on said substrate, said flow rate providing an effective temperature of said substrate lower than said heater temperature, wherein said film meets uniformity and resistance specifications after deposition onto a number of substrates, said number being less than twenty-five. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A computer readable storage medium having a computer-readable program embodied therein for directing operation of a substrate processing system of the type that includes a process chamber having a chamber body;
- a heater pedestal having a surface for supporting a substrate;
a heat exchange system including a passage in said chamber body;
a gas delivery system configured to introduce gases into the process chamber, and a plasma generation system;
the computer-readable program including instructions for operating the substrate processing system to process the substrate in accordance with the following;computer instructions for controlling said heat exchange system to circulate a heat exchange medium through said passage to maintain a heat exchange temperature of about 60°
C. or less;(b) computer instructions for heating said heater pedestal to a heater temperature; (c) computer instructions for controlling said gas delivery system to flow a gas at a flow rate to deposit a film on a substrate, said flow rate providing an effective temperature of said substrate lower than said heater temperature, wherein said film meets uniformity and resistance specifications after deposition onto a number of substrates said number being less than twenty-five. - View Dependent Claims (17, 18, 19, 20, 21)
- a heater pedestal having a surface for supporting a substrate;
Specification