Apparatus for monitoring processing of a substrate

• US 6,129,807 A
• Filed: 10/06/1997
• Issued: 10/10/2000
• Est. Priority Date: 10/06/1997
• Status: Expired due to Term

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Pan, Shaoher X., Grimbergen, Michael
• Primary Examiner(s): Gulakowski, Randy
• Assistant Examiner(s): OLSEN, ALLAN W
• Application Number:
  US08/944,240
• Time in Patent Office: 1,100 Days
• Field of Search: 156/345, 118/723 I, 118/712, 438/9, 216/60
• US Class Current: 156/345.24
• CPC Class Codes: H01J 37/32458 Vessel
• CPC Class Codes: H01J 37/32935 Monitoring and controlling tubes by information coming from the object and/or discharge

Abstract

Apparatus for in-situ monitoring of a process in a semiconductor wafer processing system consists of a process chamber having a dome, an enclosure disposed above the chamber, a process monitoring assembly positioned proximate the dome, an opening in the dome, and a window covering the opening. A portion of the apparatus supports the process monitoring assembly to establish a line-of-sight propagation path of monitoring beams from above the dome, through the window to the substrate to facilitate etch depth measurement without encountering interference from high power energy sources proximate the chamber. A method of fabricating a process monitoring apparatus consists of the steps of boring an opening into a dome, positioning the process monitoring assembly in proximity to the dome so as to allow a line-of-sight propagation path of monitoring beams from the process monitoring assembly to a wafer, and covering the opening with a window. The window is permanent or removable dependent upon the type of process monitoring assembly being used in the system.

Claims

1. A substrate processing apparatus comprising:

a process chamber comprising walls defining an enclosure capable of sustaining an environment suitable to process a substrate, wherein the walls comprise a ceiling portion adapted to substantially face the substrate during processing, the ceiling portion including an external surface and having a window therein;

an antenna at least partially covering the external surface of the ceiling portion; and

a process monitoring assembly responsive to radiation that propagates through the window during processing of the substrate.

2. A substrate processing apparatus according to claim 1 wherein the ceiling portion is substantially permeable to RF energy.

3. A substrate processing apparatus according to claim 1 wherein the window is substantially transparent to electromagnetic energy other than RF energy.

4. A substrate processing apparatus according to claim 3 wherein the window is substantially transparent to optical energy.

5. A substrate processing apparatus according to claim 1 wherein the ceiling portion is at least partially domed.

6. A substrate processing apparatus according to claim 1 wherein the ceiling portion comprises a ceramic.

7. A substrate processing apparatus according to claim 6 wherein the ceramic comprises aluminum oxide or quartz.

8. A substrate processing apparatus according to claim 1 wherein the antenna is substantially non-vertical.

9. A substrate processing apparatus according to claim 1 wherein the window is removable from the ceiling portion.

10. A substrate processing apparatus according to claim 1 further comprising an enclosure housing the process monitoring assembly, the enclosure including a cover above and spaced from the external surface of the ceiling portion.

11. An apparatus according to claim 10 further comprising a temperature controller in the enclosure.

12. A substrate processing apparatus according to claim 1 wherein the process monitoring assembly is adapted to be mounted above the window.

13. A substrate processing apparatus according to claim 11 wherein the process monitoring assembly is responsive to optical radiation emissions.

14. A substrate processing apparatus according to claim 1 wherein the process monitoring assembly comprises an interferometer.

15. A substrate processing apparatus according to claim 1 wherein the process monitoring assembly comprises a signal source, a signal detector, a collimating assembly and a transmission cable connecting the collimating assembly to the signal source and signal detector.

16. An apparatus according to claim 1 wherein the antenna comprises coils that extend radially inward.

17. An apparatus according to claim 1 wherein the antenna covers about two-thirds of the external surface.

18. A substrate processing apparatus according to claim 1 comprising a single antenna.

19. A substrate processing apparatus according to claim 18 wherein the antenna is coiled radially inward.

20. An apparatus capable of processing a substrate, the apparatus comprising:

a process chamber having sidewalls and a top surface, the top surface being at least partially domed and having a window therethrough; and

a process monitoring assembly responsive to radiation that propagates through the window during processing of the substrate.

21. An apparatus according to claim 20 wherein the top surface comprises a material substantially permeable to RF energy.

22. An apparatus according to claim 20 wherein the window is substantially transparent to electromagnetic energy other than RF energy.

23. An apparatus according to claim 22 wherein the window is substantially transparent to optical energy.

24. An apparatus according to claim 20 wherein the top surface comprises a ceramic.

25. An apparatus according to claim 24 wherein the ceramic comprises aluminum oxide or quartz.

26. An apparatus according to claim 20 wherein an antenna is disposed above the top surface, and wherein the top surface comprises a material that allows RF energy from the antenna to be coupled to gas in the chamber.

27. An apparatus according to claim 26 wherein the antenna at least partially covers the top surface.

28. An apparatus according to claim 27 wherein the antenna is substantially non-vertical.

29. An apparatus according to claim 26 wherein the antenna comprises coils that extend radially inward.

30. An apparatus according to claim 26 wherein the antenna covers about two-thirds of the top surface.

31. A substrate processing apparatus according to claim 26 comprising a single antenna.

32. A substrate processing apparatus according to claim 31 wherein the antenna is coiled radially inward.

33. An apparatus according to claim 20 wherein the window is removable from the top surface.

34. An apparatus according to claim 20 further comprising an enclosure adapted to house at least a portion of the process monitoring assembly.

35. An apparatus according to claim 34 further comprising a temperature controller in the enclosure.

36. An apparatus according to claim 20 wherein the process monitoring assembly is adapted to be mounted above the window.

37. An apparatus according to claim 20 wherein the process monitoring assembly comprises an interferometer.

38. An apparatus according to claim 20 wherein the process monitoring assembly comprises a signal source, a signal detector, a collimating assembly and a transmission cable connecting the collimating assembly to the signal source and signal detector.

39. An apparatus capable of processing a substrate, the apparatus comprising:

a process chamber having walls defining an enclosure capable of sustaining an environment suitable to process a substrate, wherein the walls comprise a ceiling portion adapted to substantially face the substrate during processing, the ceiling portion including an exterior surface and a window therethrough;

an enclosure disposed above the external surface of the ceiling portion;

an antenna within the enclosure; and

a process monitoring assembly at least partially housed within the enclosure, the process monitoring assembly being responsive to radiation that propagates through the window during processing of the substrate.

40. An apparatus according to claim 39 wherein the ceiling portion allows RF energy from the antenna to be coupled to gas in the chamber.

41. An apparatus according to claim 39 wherein the antenna at least partially covers the ceiling portion.

42. An apparatus according to claim 39 wherein the window is substantially transparent to electromagnetic energy other than RF energy.

43. An apparatus according to claim 39 wherein the window is substantially transparent to optical energy.

44. An apparatus according to claim 39 wherein the ceiling portion is at least partially domed.

45. An apparatus according to claim 39 wherein the ceiling portion comprises a ceramic.

46. An apparatus according to claim 45 wherein the ceramic comprises aluminum oxide or quartz.

47. An apparatus according to claim 39 wherein the window is removable from the ceiling portion.

48. An apparatus according to claim 39 wherein the process monitoring assembly and window are mounted above a substrate support in the chamber.

49. An apparatus according to claim 39 wherein the process monitoring assembly comprises an interferometer.

50. An apparatus according to claim 39 wherein the process monitoring assembly comprises a signal source, a signal detector, a collimating assembly and a transmission cable connecting the collimating assembly to the signal source and signal detector.

51. An apparatus according to claim 39 wherein the radiation originates from a radiation source or a plasma.

52. An apparatus according to claim 39 further comprising a temperature controller in the enclosure.

53. An apparatus according to claim 39 wherein the antenna comprises coils that extend radially inward.

54. An apparatus according to claim 39 wherein the antenna covers about two-thirds of the external surface.

55. A substrate processing apparatus according to claim 39 comprising a single antenna.

56. A substrate processing apparatus according to claim 55 wherein the antenna is coiled radially inward.