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Method for forming a BiCMOS integrated circuit with Nwell compensation implant and method

  • US 6,130,122 A
  • Filed: 07/15/1998
  • Issued: 10/10/2000
  • Est. Priority Date: 07/21/1997
  • Status: Expired due to Term
First Claim
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1. A method of fabricating a BiCMOS circuits, comprising the steps of:

  • forming a plurality of Nwell regions in a semiconductor substrate;

    forming a plurality of isolation regions to electrically isolate at least some of the Nwell regions;

    forming MOS transistors in a first subset of said plurality of Nwell regions;

    forming extrinsic and intrinsic base regions of bipolar transistors in a second subset of Nwell regions; and

    implanting a p-type dopant in at least some of said second subset of Nwell regions to form lightly doped collector regions in at least some of the bipolar transistors.

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