Vapor-phase film growth apparatus and gas ejection head
First Claim
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1. A gas ejection head comprising:
- a planar nozzle head body including a plurality of nozzle orifices, at least one of said nozzle orifices having a minimum cross-sectional area Fc (m2) satisfying the following expression;
space="preserve" listing-type="equation">F.sub.c ≦
m.sub.c /[{2/(k+1)}.sup.1/(k-1) {k/(k+1)}.sup.1/2 {2(p.sub.1 /v.sub.1)}.sup.1/2 ]wherein;
mc =the mass flow (kg/s) per orifice;
k the ratio of specific heats (a constant dependant on the gas);
p1 =the pressure (Pa) of the gas at the gas inlet side of the orifice; and
v1 =the specific volume (m3 /kg) of the gas at the gas inlet side of the nozzle orifice.
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Abstract
A vapor-phase film growth apparatus includes a substrate holder for holding a substrate, a gas ejection head, and a radiant heat shield device. The substrate holder has a substrate heater therein, and the gas ejection head has a gas injection surface for ejecting a material gas toward a substrate held by the substrate holder. The radiant heat shield device is disposed between the substrate holder and the gas injection head in confronting relationship to the gas injection surface of the gas ejection nozzle. The substantially planar radiant heat shield device is permeable to gases and has a heating capability.
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9 Claims
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1. A gas ejection head comprising:
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a planar nozzle head body including a plurality of nozzle orifices, at least one of said nozzle orifices having a minimum cross-sectional area Fc (m2) satisfying the following expression;
space="preserve" listing-type="equation">F.sub.c ≦
m.sub.c /[{2/(k+1)}.sup.1/(k-1) {k/(k+1)}.sup.1/2 {2(p.sub.1 /v.sub.1)}.sup.1/2 ]wherein;
mc =the mass flow (kg/s) per orifice;k the ratio of specific heats (a constant dependant on the gas); p1 =the pressure (Pa) of the gas at the gas inlet side of the orifice; and v1 =the specific volume (m3 /kg) of the gas at the gas inlet side of the nozzle orifice. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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Specification