Semiconductor device and method of fabricating the same

• US 6,133,075 A
• Filed: 04/24/1998
• Issued: 10/17/2000
• Est. Priority Date: 04/25/1997
• Status: Expired due to Term

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Ohtani, Hisashi, Takano, Tamae, Ohnuma, Hideto, Yamazaki, Shunpei
• Primary Examiner(s): Elms, Richard
• Assistant Examiner(s): LEBENTRITT, MICHAEL
• Application Number:
  US09/065,692
• Time in Patent Office: 907 Days
• Field of Search: 438/158, 438/160, 438/166, 438/172
• US Class Current: 438/158
• CPC Class Codes: G02B 2027/0138 comprising image capture systems, e.g. camera
• CPC Class Codes: G02B 27/017 Head mounted
• CPC Class Codes: G02B 5/30 Polarising elements light-modulating devices with active elements G02F1/00
• CPC Class Codes: G02F 1/13454 Drivers integrated on the active matrix substrate G02F1/136277 takes precedence
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 27/1277 using a crystallisation promoting species, e.g. local introduction of Ni catalyst
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate

Abstract

There are disclosed techniques for providing a simplified process sequence for fabricating a semiconductor device. The sequence starts with forming an amorphous film containing silicon. Then, an insulating film having openings is formed on the amorphous film. A catalytic element is introduced through the openings to effect crystallization. Thereafter, a window is formed in the insulating film, and P ions are implanted. This process step forms two kinds of regions simultaneously (i.e., gettering regions for gettering the catalytic element and regions that will become the lower electrode of each auxiliary capacitor later).

Claims

1. A method of fabricating a semiconductor device, comprising the steps of:

forming an amorphous film containing silicon;

preparing a catalytic element for promoting crystallization of said silicon;

maintaining said catalytic element in contact with at least parts of said amorphous film or introducing said catalytic element into said at least parts of said amorphous film;

heat-treating said amorphous film to crystallize portions of said amorphous film that will become active components;

preparing a chemical element selected from group 15 of the periodic table;

introducing said chemical element into regions adjacent to said portions of said film becoming the active components and simultaneously into regions becoming a lower electrode of each auxiliary capacitor;

irradiating a laser light to said film after said introducing step of said chemical element; and

heat-treating said film after said irradiating step to getter said catalytic element into regions doped with said chemical element selected from group 15.

2. A method of fabricating a semiconductor device, comprising the steps of:

forming an amorphous film containing silicon;

preparing a catalytic element for promoting crystallization of said silicon;

maintaining said catalytic element in contact with at least parts of said amorphous film or introducing said catalytic element into said at least parts of said amorphous film;

heat-treating said amorphous film to crystallize portions of said amorphous film that will become active components;

preparing a chemical element selected from group 15 of the periodic table;

introducing said chemical element into regions adjacent to said portions of said film becoming the active components and simultaneously into regions becoming a lower electrode of each auxiliary capacitor;

irradiating a laser light to said film after said introducing step of said chemical element; and

heat-treating said film after said irradiating step to getter said catalytic element into regions doped with said chemical element selected from group 15,

wherein said laser light is selected from the group consisting of YAG laser light, KrF excimer laser light, ArF excimer laser light, XeCl excimer laser light and CO₂ laser light.

3. A method of fabricating a semiconductor device, comprising the steps of:

forming an amorphous film containing silicon;

preparing a catalytic element for promoting crystallization of said silicon;

maintaining said catalytic element in contact with at least parts of said amorphous film or introducing said catalytic element into said at least parts;

heat-treating said amorphous film to crystallize portions of said amorphous film becoming active components;

introducing a chemical element selected from group 15 into regions adjacent to said portions of said film becoming active components and simultaneously into regions becoming a lower electrode of each auxiliary capacitor;

irradiating a laser light to said film after said introducing step of said chemical element; and

heat-treating said film to getter said catalytic element into regions doped with said chemical element selected from group 15; and

heat-treating said film in an ambient containing a halogen element to getter said catalytic element into said ambient.

4. A method of fabricating a semiconductor device, comprising the steps of:

forming an amorphous film containing silicon;

preparing a catalytic element for promoting crystallization of said silicon;

maintaining said catalytic element in contact with at least parts of said amorphous film or introducing said catalytic element into said at least parts;

heat-treating said amorphous film to crystallize portions of said amorphous film becoming active components;

introducing a chemical element selected from group 15 into regions adjacent to said portions of said film becoming active components and simultaneously into regions becoming a lower electrode of each auxiliary capacitor;

irradiating a laser light to said film after said introducing step of said chemical element; and

heat-treating said film to getter said catalytic element into regions doped with said chemical element selected from group 15; and

heat-treating said film in an ambient containing a halogen element to getter said catalytic element into said ambient,

wherein said laser light is selected from the group consisting of YAG laser light, KrF excimer laser light, ArF excimer laser light, XeCl excimer laser light and CO₂ laser light.

5. A method of fabricating a semiconductor device, comprising the steps of:

forming an amorphous film containing silicon;

forming an insulator film having a first opening on said amorphous film;

preparing a catalytic element for promoting crystallization of said silicon;

maintaining said catalytic element in contact with said amorphous film or introducing said catalytic element into said amorphous film while using said insulator film as a mask;

heat-treating said amorphous film to crystallize portions of said amorphous film that will become active components;

forming a second opening in said insulator film;

preparing a chemical element selected from group 15 of the periodic table;

introducing said chemical element into regions exposed through bottoms of said first and second openings in the crystallized film simultaneously;

irradiating a laser light to said film after said introducing step of said chemical element;

heat-treating said film to getter said catalytic element into regions doped with said chemical element selected from group 15; and

heat-treating said amorphous film in an ambient containing a halogen element to getter said catalytic element into said ambient.

6. A method of fabricating a semiconductor device, comprising the steps of:

forming an amorphous film containing silicon;

forming an insulator film having a first opening on said amorphous film;

preparing a catalytic element for promoting crystallization of said silicon;

maintaining said catalytic element in contact with said amorphous film or introducing said catalytic element into said amorphous film while using said insulator film as a mask;

heat-treating said amorphous film to crystallize portions of said amorphous film that will become active components;

forming a second opening in said insulator film;

preparing a chemical element selected from group 15 of the periodic table;

introducing said chemical element into regions exposed through bottoms of said first and second openings in the crystallized film simultaneously;

irradiating a laser light to said film after said introducing step of said chemical element;

heat-treating said film to getter said catalytic element into regions doped with said chemical element selected from group 15; and

heat-treating said film in an ambient containing a halogen element to getter said catalytic element into said ambient,

wherein said laser light is selected from the group consisting of YAG laser light, KrF excimer laser light, ArF excimer laser light, XeCl excimer laser light and CO₂ laser light.

7. A method of fabricating a semiconductor device, comprising the steps of:

forming an amorphous film containing silicon;

forming an insulating film having a first opening on said amorphous film;

preparing a catalytic element for promoting crystallization of said silicon;

maintaining said catalytic element in contact with said amorphous film or introducing said catalytic element into said amorphous film while using said insulator film as a mask;

heat-treating said amorphous film to crystallize portions of said amorphous film that will become active components;

forming a second opening in said insulator film;

preparing a chemical element selected from group 15 of the periodic table;

introducing said chemical element into regions exposed through bottoms of said first and second openings in the crystallized film;

irradiating a laser light to said film after said introducing step of said chemical element; and

heat-treating said film to getter said catalytic element into regions doped with said chemical element selected from group 15.

8. A method of fabricating a semiconductor device, comprising the steps of:

forming an amorphous film containing silicon;

forming an insulating film having a first opening on said amorphous film;

preparing a catalytic element for promoting crystallization of said silicon;

maintaining said catalytic element in contact with said amorphous film or introducing said catalytic element into said amorphous film while using said insulator film as a mask;

heat-treating said amorphous film to crystallize portions of said amorphous film that will become active components;

forming a second opening in said insulator film;

preparing a chemical element selected from group 15 of the periodic table;

introducing said chemical element into regions exposed through bottoms of said first and second openings in the crystallized film;

irradiating a laser light to said film after said introducing step of said chemical element; and

heat-treating said film to getter said catalytic element into regions doped with said chemical element selected from group 15;

wherein said laser light is selected from the group consisting of YAG laser light, KrF excimer laser light, ArF excimer laser light, XeCl excimer laser light and CO₂ laser light.

9. A method of fabricating a semiconductor device, comprising the steps of:

forming an amorphous film containing silicon;

preparing a catalytic element for promoting crystallization of said silicon;

maintaining said catalytic element in contact with at least parts of said amorphous film or introducing said catalytic element into said at least parts of said amorphous film;

heat-treating said amorphous film to crystallize portions of said amorphous film that will become active components;

preparing a chemical element selected from group 15 of the periodic table;

introducing said chemical element into regions adjacent to said portions of said amorphous film becoming the active components and simultaneously into regions becoming a lower electrode of each auxiliary capacitor; and

heat-treating said amorphous film to getter said catalytic element into regions doped with said chemical element selected from group 15.

10. The method of claim 9, wherein said step of introducing said chemical element into said regions forms gettering regions and the lower electrode of each auxiliary capacitor.

11. The method of claim 9, wherein said catalytic element is at least:

one element selected from the group consisting of Ni, Co, Fe, Pd, Pt, Cu, and Au.

12. The method of claim 9, wherein said catalytic element is introduced by ion implantation.

13. The method of claim 9, wherein said chemical element selected from group 15 is at least one element selected from the group consisting of P, As, Sb, and Bi.

14. The method of claim 9, wherein said step of introducing said chemical element is carried out by ion implantation or plasma doping.

15. The method of claim 9, wherein said step of introducing said chemical element selected from group 15 is carried out with a dose of 1×

10¹³ to 8×

10¹⁵ atoms/cm².

16. The method of claim 9, wherein said step of heat-treating said amorphous film to getter said catalytic element using said chemical element is carried out at a temperature of 500-700°

C.

17. The method of claim 9, wherein said semiconductor device is an electroluminescent device.

18. The method of claim 9, wherein said semiconductor device is one of a mobile telephone, a video camera, a mobile computer, a head mount display, a rear projection and a front projection.

19. A method of fabricating a semiconductor device, comprising the steps of:

forming an amorphous film containing silicon;

forming an insulating film having a first opening on said amorphous film;

preparing a catalytic element for promoting crystallization of said silicon;

maintaining said catalytic element in contact with said amorphous film or introducing said catalytic element into said amorphous film while using said insulator film as a mask;

heat-treating said amorphous film to crystallize portions of said amorphous film that will become active components;

forming a second opening in said insulator film;

preparing a chemical element selected from group 15 of the periodic table;

introducing said chemical element into regions exposed through bottoms of said first and second openings in the crystallized film; and

heat-treating said amorphous film to getter said catalytic element into regions doped with said chemical element selected from group 15.

20. The method of claim 19, wherein said second opening is formed over regions becoming the lower electrode of each auxiliary capacitor.

21. The method of claim 19, wherein said step of introducing said chemical element into said regions forms gettering regions and the lower electrode of each auxiliary capacitor.

22. The method of claim 19, wherein said catalytic element is at least one element selected from the group consisting of Ni, Co, Fe, Pd, Pt, Cu, and Au.

23. The method of claim 19, wherein said catalytic element is introduced by ion implantation.

24. The method of claim 19, wherein said chemical element selected from group 15 is at least one element selected from the group consisting of P, As, Sb, and Bi.

25. The method of claim 19, wherein said step of introducing said chemical element is carried out by ion implantation or plasma doping.

26. The method of claim 19, wherein said step of introducing said chemical element selected from group 15 is carried out with a dose of 1×

10¹³ to 8×

10¹⁵ atoms/cm².

27. The method of claim 19, wherein said step of heat-treating said amorphous film to getter said catalytic element using said chemical element is carried out at a temperature of 500-700°

C.

28. The method of claim 19, wherein said semiconductor device is an electroluminescent device.

29. The method of claim 19, wherein said semiconductor device is one of a mobile telephone, a video camera, a mobile computer, a head mount display, a rear projection and a front projection.

30. A method of fabricating a semiconductor device having peripheral circuits and a pixel matrix circuit on a common substrate, said method comprising the steps of:

forming an amorphous film containing silicon;

preparing a catalytic element for promoting crystallization of said silicon;

maintaining said catalytic element in contact with at least parts of regions of said amorphous film becoming said peripheral circuits or introducing said catalytic element into said at least parts of the regions;

heat-treating said amorphous film to crystallize portions of said amorphous film that will become active components of said peripheral circuits;

preparing a chemical element selected from group 15 of the periodic table;

introducing said chemical element into regions adjacent to said portions of said amorphous film becoming said active components and simultaneously into regions becoming a lower electrode of each auxiliary capacitor; and

heat-treating said amorphous film to getter said catalytic element into regions doped with said chemical element selected from group 15.

31. The method of claim 30, wherein said step of introducing said chemical element into said regions forms gettering regions and the lower electrode of each auxiliary capacitor.

32. The method of claim 30, wherein said catalytic element is at least one element selected from the group consisting of Ni, Co, Fe, Pd, Pt, Cu, and Au.

33. The method of claim 30, wherein said catalytic element is introduced by ion implantation.

34. The method of claim 30, wherein said chemical element selected from group 15 is at least one element selected from the group consisting of P, As, Sb, and Bi.

35. The method of claim 30, wherein said step of introducing said chemical element is carried out by ion implantation or plasma doping.

36. The method of claim 30, wherein said step of introducing said chemical element selected from group 15 is carried out with a dose of 1×

10¹³ to 8×

10¹⁵ atoms/cm².

37. The method of claim 30, wherein said step of heat-treating said amorphous film to getter said catalytic element using said chemical element is carried out at a temperature of 500-700°

C.

38. The method of claim 30, wherein said semiconductor device is an electroluminescent device.

39. The method of claim 30, wherein said semiconductor device is one of a mobile telephone, a video camera, a mobile computer, a head mount display, a rear projection and a front projection.

40. A method of fabricating a semiconductor device, comprising the steps of:

forming an amorphous film containing silicon;

preparing a catalytic element for promoting crystallization of said silicon;

maintaining said catalytic element in contact with at least parts of said amorphous film or introducing said catalytic element into said at least parts;

heat-treating said amorphous film to crystallize portions of said amorphous film becoming active components;

introducing a chemical element selected from group 15 into regions adjacent to said portions of said amorphous film becoming active components and simultaneously into regions becoming a lower electrode of each auxiliary capacitor;

heat-treating said amorphous film to getter said catalytic element into regions doped with said chemical element selected from group 15; and

heat-treating said amorphous film in an ambient containing a halogen element to getter said catalytic element into said ambient.

41. The method of claim 40, wherein said step of introducing said chemical element into said regions forms gettering regions and the lower electrode of each auxiliary capacitor.

42. The method of claim 40, wherein said catalytic element is at least one element selected from the group consisting of Ni, Co, Fe, Pd, Pt, Cu, and Au.

43. The method of claim 40, wherein said step of introducing said catalytic element is carried out by ion implantation.

44. The method of claim 40, wherein said chemical element selected from group 15 of the periodic table is at least one element selected from the group consisting of P, As, Sb, and Bi.

45. The method of claim 40, wherein said step of introducing said chemical element selected from group 15 is carried out by ion implantation or plasma doping.

46. The method of claim 40, wherein said step of introducing said chemical element selected from group 15 is carried out with a dose of 1×

10¹³ to 8×

10¹⁵ atoms/cm².

47. The method of claim 40, wherein said step of heat-treating said amorphous film to getter said catalytic element using said chemical element is carried out at a temperature of 500 to 700°

C., and wherein said step of heat-treating said amorphous film in an ambient containing a halogen element to getter said catalytic element is carried out at a temperature of 700 to 1100°

C.

48. The method of claim 40, wherein said semiconductor device is an electroluminescent device.

49. The method of claim 40, wherein said semiconductor device is one of a mobile telephone, a video camera, a mobile computer, a head mount display, a rear projection and a front projection.

50. A method of fabricating a semiconductor device, comprising the steps of:

forming an amorphous film containing silicon;

forming an insulator film having a first opening on said amorphous film;

preparing a catalytic element for promoting crystallization of said silicon;

maintaining said catalytic element in contact with said amorphous film or introducing said catalytic element into said amorphous film while using said insulator film as a mask;

heat-treating said amorphous film to crystallize portions of said amorphous film that will become active components;

forming a second opening in said insulator film;

preparing a chemical element selected from group 15 of the periodic table;

introducing said chemical element into regions exposed through bottoms of said first and second openings in the crystallized film simultaneously;

heat-treating said amorphous film to getter said catalytic element into regions doped with said chemical element selected from group 15; and

heat-treating said amorphous film in an ambient containing a halogen element to getter said catalytic element into said ambient.

51. The method of claim 50, wherein said second opening is, formed ever a region becoming a lower electrode of an auxiliary capacitor.

52. The method of claim 50, wherein said step of introducing said chemical element into said regions forms gettering regions and the lower electrode of each auxiliary capacitor.

53. The method of claim 50, wherein said catalytic element is at least one element selected from the group consisting of Ni, Co, Fe, Pd. Pt, Cu, and Au.

54. The method of claim 50, wherein said step of introducing said catalytic element is carried out by ion implantation.

55. The method of claim 50, wherein said chemical element selected from group 15 of the periodic table is at least one element selected from the group consisting of P, As, Sb, and Bi.

56. The method of claim 50, wherein said step of introducing said chemical element selected from group 15 is carried out by ion implantation or plasma doping.

57. The method of claim 50, wherein said step of introducing said chemical element selected from group 15 is carried out with a dose of 1×

10¹³ to 8×

10¹⁵ atoms/cm².

58. The method of claim 50, wherein said step of heat-treating said amorphous film to getter said catalytic element using said chemical element is carried out at a temperature of 500 to 700°

C., and wherein said step of heat-treating said amorphous film in an ambient containing a halogen element to getter said catalytic element is carried out at a temperature of 700 to 1100°

C.

59. The method of claim 50, wherein said semiconductor device is an electroluminescent device.

60. The method of claim 50, wherein said semiconductor device is one of a mobile telephone, a video camera, a mobile computer, a head mount display, a rear projection and a front projection.

61. A method of fabricating a semiconductor device having peripheral circuits and a pixel matrix circuit on a common substrate, said method comprising the steps of:

forming an amorphous film containing silicon;

preparing a catalytic element for promoting crystallization of said silicon;

maintaining said catalytic element in contact with all or some regions becoming said peripheral circuits or introducing said catalytic element into said regions;

heat-treating said amorphous film to crystallize the regions of said amorphous film that will become active components of said peripheral circuits;

preparing a chemical element selected from group 15 of the periodic table;

introducing said chemical element into regions adjacent to said regions becoming said active components and simultaneously into regions becoming a lower electrode of each auxiliary capacitor;

heat-treating said amorphous film to getter said catalytic element into regions doped with said chemical element selected from group 15; and

heat-treating said amorphous film in an ambient containing a halogen element to getter said catalytic element into said ambient.

62. The method of claim 61, wherein said step of introducing said chemical element into said regions forms gettering regions and the lower electrode of each auxiliary capacitor.

63. The method of claim 61, wherein said catalytic element is at least one element selected from the group consisting of Ni, Co, Fe, Pd, Pt, Cu, and Au.

64. The method of claim 61, wherein said step of introducing said catalytic element is carried out by ion implantation.

65. The method of claim 61, wherein said chemical element selected from group 15 of the periodic table is at least one element selected from the group consisting of P, As, Sb, and Bi.

66. The method of claim 61, wherein said step of introducing said chemical element selected from group 15 is carried out by ion implantation or plasma doping.

67. The method of claim 61, wherein said step of introducing said chemical element selected from group 15 is carried out with a dose of 1×

10¹³ to 8×

10¹⁵ atoms/cm².

68. The method of claim 61, wherein said step of heat-treating said amorphous film to getter said catalytic element using said chemical element is carried out at a temperature of 500 to 700°

C., and wherein said step of heat-treating said amorphous film in an ambient containing a halogen element to getter said catalytic element is carried out at a temperature of 700 to 1100°

C.

69. The method of claim 61, wherein said semiconductor device is an electroluminescent device.

70. The method of claim 61, wherein said semiconductor device is one of a mobile telephone, a video camera, a mobile computer, a head mount display, a rear projection and a front projection.